• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.120-121
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• 2004

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.808-813
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• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.115-120
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• 1998

The $TiN_x$ thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitrogen flow rates in the range 3-9 seem with a constant argon flow rate of 20 seem. For the films obtained, the chemical binding energy of the films was investigated by XPS (x-ray photoelectron spectroscopy) in order to analyze the chemical nature and composition of the films.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.1
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• pp.21-25
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• 1999

The TiN, thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitogen flow rates in the range 3-9 sccm with a constant argon flow rate of 20 secm. For the films obtained, the sheet resistance and the chemical binding energy of the films was observed by four-point-probe method and x-ray photoelectron spectroscopy(XPS) depth profiling respectively. In addition, we investigated the relationship between the surface resistance and the chemical nature of the films.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.676-680
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• 2008

TiN thin films were deposited on a $SiO_2(2000{\AA})/Si$ substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying $N_2$ concentration in $N_2/Ar$ gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As $N_2$ concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of $2.46{\times}10^{-4}{\Omega}cm$ at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.6
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• pp.344-349
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• 2010

Silicon carbide nanowires were grown by heat treatment of the films at $1200^{\circ}C$ after amorphous SiC thin films were deposited on graphite substrate by radio frequency magnetron sputtering at $600^{\circ}C$. It was confirmed that SiC nanowires with the diameter of 20-60 nm and length of about 50nm were grown from Field Emission Scanning Election Microscope (FE-SEM) and Transmission Election Microscope (TEM) observation. The diameter of nanowires was increased as heat treatment time is increased. The nanowires were identified to ${\beta}$-SiC single crystalline from X-Ray Diffraction(XRD) analysis. It was observed from this study that deposition temperature of samples was critical to the crystallization of nanowires. On the other hand, the effect of deposition time was insignificant.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.394-401
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• 2009

This paper reports the structural and optical properties of ZnO/glass thin films grown by radio-frequency magnetron sputtering with a powder target. In contrast to ZnO ceramic target typically used, a ZnO raw powder target was sputtered in this study. ZnO grew with the (0002) preferred orientation along the surface normal direction. Initially, the surface of ZnO thin films was flat considerably and then it became rougher as the thickness increased. The optical transmittance was as high as 88% in the range of 400-1000 nm. The bandgap energy of 3.23 eV at the 220 nm thick sample was estimated.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.159-164
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• 2005

Indium tin oxide (ITO) films were deposited on a glass slide at a thickness of 280 nm by radio frequency(rf) magnetron sputtering from a ceramic target composed of $In_2O_3\;(90\%)\;+\;SnO_2\;(10\%)$. We investigated the effects of the annealing temperature (Ta) between 200 and 350'E for 30 min in air on such properties as thermal stability, surface morphology, and crystal structure of the films. X-ray diffraction spectra revealed that all the films were oriented preferably with [222] direction and [440] direction and the peak intensity increased with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) showed that the sodium was out-diffused from the glass substrate at the annealing temperature of $350^{\circ}C$. The sodium composition of the ITO film amlealed at $350^{\circ}C\;for\;30\;min\;was\;2.5\%$ at the surface. Also the sodium peak almost disappeared after 3 keV $Ar^+$sputtering for 6 min. The visible transmittance of all ITO films was over $77\%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.932-938
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• 2007

The structural, optical, and electrical properties of ZnO thin films grown on glass by radio-frequency (rf) magnetron sputtering were investigated. The mixture flow ratio of $O_2$ to Ar, which was operated with sputtering gas, was chosen as a parameter for growing high-qualify ZnO thin films. The structural properties and surface morphologies of the thin films were characterized by the X-ray diffraction and the atomic force microscope, respectively. As for the optical properties of the films, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of ZnO thin films were calculated from the measured data. The crystallinity of the films was improved and the bandgap energy was increased from 3.08 eV to 3.23 eV as the oxygen flow ratio was increased from 0 % to 50 %. Furthermore, The ultraviolet and violet luminescences were observed by using photoluminescence spectroscopy. The hall mobility was decreased with the increase of oxygen flow ratio.