Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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A Characteristic study of SiC Nanowires by RF-Sputtering

RF-Sputtering 법에 의한 SiC 나노와이어의 특성연구

  • Jeong, Chang-Gu (Dept. of nano Fusion Technology, Pusan National University) ;
  • Kim, Tae-Gyu (Dept. of nanomechatronics Engineering, Pusan National University)
  • 정창구 (부산대학교 나노융합기술학과) ;
  • 김태규 (부산대학교 나노메카트로닉스공학과)
  • Received : 2010.10.15
  • Accepted : 2010.11.17
  • Published : 2010.11.30
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Abstract

Silicon carbide nanowires were grown by heat treatment of the films at $1200^{\circ}C$ after amorphous SiC thin films were deposited on graphite substrate by radio frequency magnetron sputtering at $600^{\circ}C$. It was confirmed that SiC nanowires with the diameter of 20-60 nm and length of about 50nm were grown from Field Emission Scanning Election Microscope (FE-SEM) and Transmission Election Microscope (TEM) observation. The diameter of nanowires was increased as heat treatment time is increased. The nanowires were identified to ${\beta}$-SiC single crystalline from X-Ray Diffraction(XRD) analysis. It was observed from this study that deposition temperature of samples was critical to the crystallization of nanowires. On the other hand, the effect of deposition time was insignificant.

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