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http://dx.doi.org/10.4313/JKEM.2009.22.10.808

Effects of Deposition Temperature on the Properties of InN Thin Films Grown by Radio-frequency Reactive Magnetron Sputtering  

Cho, Shin-Ho (신라대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.10, 2009 , pp. 808-813 More about this Journal
Abstract
Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.
Keywords
InN; Thin film; Rf reactive magnetron sputtering; Transmittance; Bandgap;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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1 K. Ikuta, Y. Inoue, and O. Takai, “Optical and electrical properties of InN thin films grown on $ZnO/\alpha-Al^{2}O_{3}$ by rf reactive magnetron sputteing”, Thin Solid Films, Vol. 334, p. 49, 1998.   DOI   ScienceOn
2 M. L. Tu, Y. K. Su, and C. Y. Ma, “Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magetron sputtering”, J. Appl. Phys., Vol. 100, p. 053705, 2006.   DOI   ScienceOn
3 조신호, “$O_{2}/Ar$ 혼합 유량비를 변수로 갖는 라디오파 마그네트론 스퍼터링으로 성장된 ZnO 박막의 특성”, 전기전자재료학회논문지, 20권, 11호, p. 932, 2007.   과학기술학회마을   DOI   ScienceOn
4 F. Yakuphanoglu, M. Sekerci, and O. F. Ozturk, “The determination of the optical constants of Cu(II) compound having 1-chloro-2,3-0-cyclohexylidinepropane thin film”, Opt. Comm., Vol. 239, p. 275, 2004.   DOI   ScienceOn
5 Y. Liu and J. Lian, “Optical and electrical properties of aluminum-doped ZnO thin films by pulsed laser deposition”, Appl. Surf. Sci., Vol. 253, p. 3727, 2007.   DOI   ScienceOn
6 Q. Guo, N. Shingai, M. Nishio, and H. Ogawa, “Deposition of InN thin films by radio frequency magnetron sputtering”, J. Cryst. Growth, Vol. 189/190, p. 466, 1998.   DOI   ScienceOn
7 R. Ascazubi, I. Wilke, S. Cho, H. Lu, and W. J. Schaff, “Ultrafast recombination in Si-doped InN”, Appl. Phys. Lett., Vol. 88, p. 112111, 2006.   DOI   ScienceOn
8 P. K. Song, D. Sato, M. Kon, and Y. Shigesato, “Crystallinity and stoichiometry of InNx films deposited by reactive dc magnetron sputtering”, Vacuum, Vol. 66, p. 373, 2002.   DOI   ScienceOn
9 T. Maruyama and T. Morishita, “Indium nitride thin films prepared by radiofrequency reactive sputtering”, J. Appl. Phys., Vol. 76, p. 5809, 1994.   DOI   ScienceOn
10 S. Inoue, T. Namazu, and K. Koterazawa, “InN films deposited by rf reactive sputtering in pure nitrogen gas”, Vacuum, Vol. 74, p. 443, 2004.   DOI   ScienceOn
11 N. Saito and Y. Igasaki, “Electrical and optical properties of InN films prepared by reactive sputtering”, Appl. Surf. Sci., Vol. 169-170, p. 349, 2001.   DOI   ScienceOn
12 Moltan, E. M. Goldys, and T. L. Tansley, “Optical and electrical properties of InN grown by radio-frequency reactive sputtering”, J. Crys. Growth, Vol. 241, p. 165, 2002.   DOI   ScienceOn
13 Q. Guo, K. Murata, M. Nishio, and H. Ogawa, “Growth of InN films on (111) GaAs substrates by reactive magnetron sputtering”, Appl. Surf. Sci., Vol. 169-170, p. 340, 2001.   DOI   ScienceOn
14 Q. Guo and A. Yoshida, “Temperature dependence of band gap change in InN and AlN”, Jpn. J. Appl. Phys., Vol. 33, p. 2453, 1994.   DOI
15 T. L. Tansley and C. P. Foley, “Optical band gap of indium nitride”, J. Appl. Phys., Vol. 59, p. 3241, 1994.   DOI