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http://dx.doi.org/10.4313/TEEM.2010.11.1.029

Synthesis and Characterization of Al-Doped Zinc Oxide Films by an Radio Frequency Magnetron Sputtering Method for Transparent Electrode Applications  

Seo, Jae-Keun (Department of Electrical Engineering, Hanbat National University)
Ko, Ki-Han (Department of Electrical Engineering, Hanbat National University)
Cho, Hyung-Jun (Department of Electrical Engineering, Hanbat National University)
Choi, Won-Seok (Department of Electrical Engineering, Hanbat National University)
Park, Mun-Gi (LG Display Co., Ltd.)
Seo, Kyung-Han (LG Display Co., Ltd.)
Park, Young (Korea Railroad Research Institute)
Lim, Dong-Gun (Department of Electronic Engineering, Chungju National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.11, no.1, 2010 , pp. 29-32 More about this Journal
Abstract
In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.
Keywords
Al-doped zinc oxide; Radio frequency magnetron sputtering method; Radio frequency power; Field emission scanning electron microscopy; X-ray diffraction;
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