• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.102-105
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• 2004

With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.

• Archives of Pharmacal Research
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• v.22 no.5
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• pp.459-463
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• 1999

The effects of the hindered and non-hindered water soluble long-chain disulfide bonds on the stability and cytotoxicity of the ricin A chain (RTA) immunotoxin were examined. The RTA immunotoxins were prepared with the Fab fragments of anti-common acute lymphoblastic leukemia antigen (CALLA) monoclonal antibody (Fab-RTA) using sulfosuccinimidyl-6-[(-methyl-(-2-pyridyldithio)toluamido]toluamido]hexanoate (S-LC-SMPT) and sulfosuccinimidyl-6-[3-(2-pyridyldithio-propionamido]hexanoate (S-LC-SPDP). The prepared Fab-RTA immunotoxins were evaluated for their conjugation yield, immunoreactivity, thermal and disulfide bond stability and cytotoxicity. The conjugation yield of the Fab-RTA immunotoxin from the water soluble long chain crosslinking agents, S-LC-SMPT and S-LC-SPDP, were comparable. Both Fab-RTA immunotoxins exhibited a similar immunoreactivity and thermal stability in aqueous solution. However, S-LC-SMPT -mediated Fab-RTA, sterically hindered, showed an enhanced disulfide bond stability in vitro over S-LC-SPDP mediated one. In the cytotoxicity against antigenic cell Daudi, the S-LC-SMPT -mediated RTA immunotoxin maintained a comparable cytotoxicity, compared with S-LC-SPDP mediated Fab-RTA immunotoxin.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.828-834
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• 2001

Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.379-382
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• 1988

In this paper optimal light source arraies are calculated to reduce slips in RTA process. A two-channel temperature controller is constructed on a board using IBM - XT to improve the temperature uniformity. The proposed RTA structure has also advantage of power dissipation.

• 대한공업교육학회지
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• v.33 no.1
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• pp.249-264
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• 2008

In this dissertation, shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes and a new simulator is designed to model boron diffusion in silicon. This simulator predicts the boron distribution after ion implantation and annealing. The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a RTA(Rapid Thermal Annealing) and a FA(Furnace Annealing) process. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of sheet resistance and the simulator reproduced experimental data successfully. Therefore, proposed diffusion simulator and FA+RTA annealing method was able to applied to shallow junction formation for thermal budget. process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.266-272
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• 2009

In the present work three dimensional process and device simulations were employed to study the performance variations with RTA. It is observed that with the increase in RTA temperature, the arsenic dopants from the source /drain region diffuse laterally under the spacer region and simultaneously acceptors (Boron) are redistributed from the central axis region of the fin towards the Si/SiO2 interface. As a consequence both drive current and peak cut-off frequency of an n-FinFET are observed to improve with RTA temperatures. Volume inversion and hence the flow of carries through the central axis region of the fin due to reduced scattering was found behind the performance improvements with increasing RTA temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1841-1851
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• 1990

Self-aligned gate GaAs MESFETs using ion beam deposited tungsten applicable to GaAs LSI fabrication process have been fabricated. Silicon implanted samples were annealed using isothermla two step RTA process and conventional one step RTA process. The electrical and physicla characteristics of annealed samples were investigated using Hall and I-V measurements. As results of measurements, activation characteristics of the isothermal two step RTA process are better than those of one step annealed ones. Using the developed processes, GaAs SAFETs (Self-Aligned Gate FET) have been fabricated and electdrical characteirstics are measured. As results, subthreshold currents of SAGFETs are 6x10**-10 A/\ulcorner, that is compatible to conventional MESFET, maximum transconductances of 0.75\ulcorner gate MESFET using one step RTA process and 2\ulcorner gate MESFET using isothermal two step RTA process are 18 mS/mm, 41 mS/mm respectively.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.262-265
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• 2003

Radiofrequency thermal ablation (RTA) as one of the microwave hyperthermia is becoming the treatment of choice for small but inoperable tumors of the liver. In this paper, we designed the applicator composed of semi-rigid coaxial cable antenna with a ring slot for RTA. To optimize the maximum output of radiation at 2450 MHz, we simulated the antenna using Electromagnetic simulation tools Maxwell program and analyzed the return loss and the electric field $E_{tot}$ at the near-field region between the simulation results and measurement results. As a result, we obtained the return loss of -29.786 dB at 2450 MHz when the antenna was placed between two blocks of a pig's liver, and the measurement results agreed with the simulation results well. Therefore, this semi-rigid coaxial cable antenna with a ring slot can be used very usefully as the applicator for RTA.r RTA.A.

• Childhood Kidney Diseases
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• v.14 no.2
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• pp.120-131
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• 2010

Renal tubular acidosis (RTA) is a metabolic acidosis due to impaired excretion of hydrogen ion, or reabsorption of bicarbonate, or both by the kidney. These renal tubular abnormalities can occur as an inherited disease or can result from other disorders or toxins that affect the renal tubules. Disorders of bicarbonate reclamation by the proximal tubule are classified as proximal RTA, whereas disorders resulting from a primary defect in distal tubular net hydrogen secretion or from a reduced buffer trapping in the tubular lumen are called distal RTA. Hyperkalemic RTA may occur as a result of aldosterone deficiency or tubular insensitivity to its effects. The clinical classification of renal tubular acidosis has been correlated with our current physiological model of how the nephron excretes acid, and this has facilitated genetic studies that have identified mutations in several genes encoding acid and base ion transporters. Growth retardation is a consistent feature of RTA in infants. Identification and correction of acidosis are important in preventing symptoms and guide approved genetic counseling and testing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.42-47
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• 2000

The surface structure and the crystalline features in the near surface region have been investigated for CZ(Czochralski) grown Si wafers. Si wafers were annealed by RTA (Rapid Thermal Annealing) method in H$_2$ambient after mirror polished process. The densities of COPs (Crystal Originated Particles) after RTA process were remarkably decreased at the surface and in the region of 5um depth from the surface as well. terrace type surface structure which was formed by etching and re-arrangement of Si atoms during $H_2$annealing process also has been observed.