Browse > Article

Shallow Junction Device Formation and the Design of Boron Diffusion Simulator  

Han, Myoung Seok (Ajou Motor College of Divison of Automobile)
Park, Sung Jong (Ajou Motor College of Divison of Automobile)
Kim, Jae Young (Taru Co., Ltd, PCB Research Center)
Publication Information
대한공업교육학회지 / v.33, no.1, 2008 , pp. 249-264 More about this Journal
Abstract
In this dissertation, shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes and a new simulator is designed to model boron diffusion in silicon. This simulator predicts the boron distribution after ion implantation and annealing. The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a RTA(Rapid Thermal Annealing) and a FA(Furnace Annealing) process. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of sheet resistance and the simulator reproduced experimental data successfully. Therefore, proposed diffusion simulator and FA+RTA annealing method was able to applied to shallow junction formation for thermal budget. process.
Keywords
shallow junction; ion implantation; diffusion; diffusion model; dual-step annealing;
Citations & Related Records
연도 인용수 순위
  • Reference
1 A. C. Ajermra and G. A. Rozgonyi(1986). "Elimination of End-of-range an Mask Edge Lateral Damage in Ge+ Preamorphized B+ Implanted Si", Applied Physics Letters, 49,1269-1271,   DOI
2 C. S. Nichols, C. G. Van de Walle and S. T. Pantelides.(1989), "Mechanisms of Dopant Impurity Diffusion in Silicon", Physics Review B, 40(8),5484-5496.   DOI   ScienceOn
3 Daniel F. Downey, Kevin S. Jones(1998). "The Role of Extended Defects on the Formation of Ultra-shallow junctions in Ion Implanted $11B^+,\;49BF^2,\;75As^+$ and $31P^+$", Ion Implantation Technology Proceedings, 1998 International Conference, 987-901.
4 G. B. Brenner and J. D. Plunimer.(1987). "Gettering of Gold in Silicon A Tool for Understanding the Properties of Silicon Interstitials", Journal of Applied Physics, 63(1), 5286-5298.
5 J. W. Jung, Y. J. Lee, J. M Hwang and K H I Pe. (1999), "The Effect of ILD Material and BPSG Iknsification Anneal on the Device Characteiistics",'99ICVC 6th Intl. Conf VLSI and CAD, 473-475.
6 Masami Hane and Hiroshi Matsumoto.(1993). "A Model for Boron Short Time Annealing After Ion Implantation", IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(7), 1215-1222.   DOI   ScienceOn
7 한명석, 박명호(2004) 열적효율성에 따른 $p^+ -n 접합 다이오드 특성. 대한공업교육학회지, 29(2), 87-93
8 D. Mathiot and J. C. Pfister.(1984). "Dopant Diffusion in Silicon: A Consistent View Involving Nonequilibrium Defects", Journal of Applied Physics, 55(10),3518-3530.   DOI   ScienceOn
9 S. M. Hu(1985). "On Interstitial and Vacancy Concentrations in Presence of Injection", Journal of Applied Physics, 57(4), 1069-1075.   DOI   ScienceOn
10 TSuprem-4 User's Manual.(1997), Technology Modeling Associates Inc
11 K. H. Lee, J. G. Oh, B. J. Cho and J. C Mn-L(1997). "Effect of Additional Low Temperature RTA on Ultra-Shallow p+-n Junction Formation', Ion Implantation Tech. Proc. 11th Intl. Conf., 634-637.
12 P. M. Fahey, P. B. Griffin and J. D. Plummer(1989). "Point Defects and Dopant Diffusion in Silicon", Review of Modern Physics, 61(2), 289-384.   DOI
13 J. A. Van Vechten and C. D. Thurmond.(1976). "Comparison of Theory with Quenching Experiments for the Entropy and Enthalpy of Vacancy Formation in Si and Ge", Physics Review B, 14(8), 3551-3557.   DOI
14 W. Zagozdzon-Wosik, P. B. Grabiec and G. Lux(1994). "Fabrication of Submicron Junctions -Proximity Rapid Thermal Diffusion of Phosphorus, Boron and Arsenic", IEEE Trans. Electron Devices, 41(12) 2281-2290.   DOI   ScienceOn
15 B. G. Streetman and S. Banerjee(2000). Solid State Electronic Devices, Prentice Hall
16 Stanley Wolf, Richard N. Tauber(1987), Silicon Processing for the VLSI Era Process Technology, vol(1), Lattice Press, vol(1)