대한공업교육학회지

Korean Institute of Industrial Educations (대한공업교육학회)
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Shallow Junction Device Formation and the Design of Boron Diffusion Simulator

박막 소자 개발과 보론 확산 시뮬레이터 설계

  • 한명석 (아주자동차대학 자동차계열) ;
  • 박성종 (아주자동차대학 자동차계열) ;
  • 김재영 ((주)타루, 인쇄전자회로연구소)
  • Received : 2008.01.30
  • Accepted : 2008.03.12
  • Published : 2008.03.31
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Abstract

In this dissertation, shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes and a new simulator is designed to model boron diffusion in silicon. This simulator predicts the boron distribution after ion implantation and annealing. The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a RTA(Rapid Thermal Annealing) and a FA(Furnace Annealing) process. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of sheet resistance and the simulator reproduced experimental data successfully. Therefore, proposed diffusion simulator and FA+RTA annealing method was able to applied to shallow junction formation for thermal budget. process.

본 연구에서는 저 에너지 이온 주입과 이중 열처리를 통하여 박막 $p^+-n$ 접합을 형성하였고, 보론 확산 모델을 가지고 새로운 시뮬레이터를 설계하여 이온 주입과 열처리 후의 보론 분포를 재현하였다. $BF_2$ 이온을 가지고 실리콘 기판에 저 에너지 이온 주입을 하였고, 이후 RTA(Rapid Thermal Annealing)와 FA(Furnace Annealing)를 통하여 열처리 과정을 수행하였다. 시뮬레이션을 위한 확산 모델은 점결함의 생성과 재결합, BI 쌍의 생성, 보론의 활성화와 침전 현상 등을 고려하였다. FA+RTA 열처리가 RTA+FA 보다 면저항 측면의 접합 특성에서 우수한 결과를 나타내었고, 시뮬레이터에서도 동일한 결과를 나타내었다. 따라서 본 연구를 통하여 박막접합을 형성할 때 열적 효율성을 고려하면 제안된 확산 시뮬레이터와 FA+RTA 공정 방법의 유용성을 기대할 수 있다.

Keywords

References

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