• 제목/요약/키워드: RPCVD

검색결과 28건 처리시간 0.023초

SiGe HBT 제작을 위한 실리콘 게르마늄 단결정 박막의 RBS 분석 (RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the fabrication of SiGe HBT)

  • 한태현;안호명;서광열
    • 한국전기전자재료학회논문지
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    • 제17권9호
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    • pp.916-923
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    • 2004
  • In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

RPCVD를 이용한 SiOF박막의 형성 및 특성 (Formation and Characterization of SiOF films using Remote Plasma Enhanced Chemical Vapour Deposition)

  • 이상우;김제덕;김광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.105-108
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    • 1995
  • The inter-metal dielectric SiOF films were fabricated using remote plasma-enhanced chemical vapour deposition with addition of SF$\sub$6/ gas. SiOF bond formation in these films was recognized by a chemical bonding structural study using FT-IR. The deposition rate and the dielectric constant of a deposited films were decreased with increasing SF$\sub$6/ gas. It was observed that leakage current of SiOF film was reduced the one order compared to a film without addtion of SF$\sub$6/ gas.

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Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer

  • Lee, Sang-Heung;Kim, Sang-Hoon;Lee, Ja-Yol;Bae, Hyun-Cheol;Lee, Seung-Yun;Kang, Jin-Yeong;Kim, Bo-Woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.114-118
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    • 2006
  • In this paper, the effect of base and collector structures on DC, small signal characteristics of SiGe HBTs fabricated by RPCVD was investigated. The structure of SiGe HBTs was designed into four types as follows: SiGe HBT structures which are standard, apply extrinsic-base SEG selective epitaxial growth (SEG), apply selective collector implantation (SCI), and apply both extrinsic-base SEG and SCI. We verified the devices could be applied to the fabrication of RFIC chip through a fully integrated 2.4 GHz down-conversion mixer.

원거리 플라즈마 화학증착법으로 증착된 이산화규소박막의 물성 (Properties of $SiO_2$Deposited by Remote Plasma Chemical Vapor Deposition(RPCVD))

  • 박영배;강진규;이시우
    • 한국재료학회지
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    • 제5권6호
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    • pp.709-709
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    • 1995
  • 원거리 플라즈마 화학증착법을 이용하여 저온에서 이산화규소박막을 제조하였다. 본 연구 에서는 공정변수인 기판의 온도, 반응기체의 조성 및 분압과 플라즈마 전력에 따른 산화막의 재료적인 물성을 평가하였다. XPS결과에서 산화막은 양론비(O/Si=2)보다 약간 적어 실리콘이 많이 함유된 막으로 나타났다. 이 경우 굴절율과 ESR분석에 의해 미결합된 실리콘의 양이 증가함을 알 수 있었다. SIMS분석에 의해 미량의 질소성분이 계면에 존재하는 것과 실리콘 미결함을 관찰하였다. FT-IR로부터 막내 수소량을 정량화하였으며 결합각 분포는 200℃이상에서 열산화막과 비슷한 값을 얻었다. 하지만 열산화막에 비해 높은 식각율을 보여 계면 스트레스에 의해 막내의 결합력이 약해진 것으로 생각된다.

박막트랜지스터 응용을 위한 ${\mu}c-Si/CaF_2$/glass 구조특성연구 (The study of ${\mu}c-Si/CaF_2$/glass properties for thin film transistor application)

  • 김도영;안병재;임동건;이준신
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1514-1516
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    • 1999
  • This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

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Monolithic SiGe Up-/Down-Conversion Mixers with Active Baluns

  • Lee, Sang-Heung;Lee, Seung-Yun;Bae, Hyun-Cheol;Lee, Ja-Yol;Kim, Sang-Hoon;Kim, Bo-Woo;Kang, Jin-Yeong
    • ETRI Journal
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    • 제27권5호
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    • pp.569-578
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    • 2005
  • The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

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전계 방출 소자용으로 제조한 단결정 실리콘 기판에 증착된 실리콘 질화막에 대한 특성 연구 (Characteristics of $SiN_x$ films on wet-etched Si for field emission device)

  • 정재훈;주병권;이윤희;오명환;장진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1137-1139
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    • 1995
  • $SiN_x$ films deposited on bare Si and wet-etched Si by RPCVD were fabricated to investigated the effect of wet-etched surface of Si on the characteristics of the interface between $SiN_x$ and Si. FT-IR spectra on each film showed similar characteristics. However, it was confirmed that the electric characteristics(I-V, C-V) of the interface between $SiN_x$ and Si have been degraded by the wet etching process of Si, which is applied for the formation of Si field emitter array. Therefore, we suggest that the stacked structure of insulating layer with good interface characteristics is desirable for FED application.

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다결정 실리콘의 선택적 성장을 이용한 깊은 트랜치 격리기술 (A New Method for Deep Trench Isolation Using Selective Polycrystalline Silicon Growth)

  • 박찬우;김상훈;현영철;이승윤;심규환;강진영
    • 한국진공학회지
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    • 제11권4호
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    • pp.235-239
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    • 2002
  • 식각된 트랜치의 내부에 다결정 실리콘 측벽을 형성하고, 감압 화학기상 증착법(RPCVD: Reduced Pressure Chemical Vapor Deposition)을 이용해서 이를 선택적으로 성장시킴으로써 트랜치를 채우는 새로운 트랜치 격리방법을 제안하였다. 공정진행 결과, 측벽의 초기깊이와 선택적으로 성장되는 실리콘의 두께가 트랜치의 최종형태를 결정하는 가장 중요한 요소임을 확인할 수 있었다. 이 방법은 CMP 공정을 거치지 않고도 트랜치의 내부만이 실리콘으로 채워진 구조를 구현함으로써, 공정을 단순화할 뿐만 아니라 불균일 연마와 흠집발생 등 기존의 CMP 공정에서 발생할 수 있는 문제들을 방지할 수 있다는 장점을 지니고 있다.

DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with $Si_{0.88}Ge_{0.12}(C)$ Heterostructure Channel

  • Choi, Sang-Sik;Yang, Hyun-Duk;Han, Tae-Hyun;Cho, Deok-Ho;Kim, Jea-Yeon;Shim, Kyu-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.106-113
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    • 2006
  • Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

Bottom 컬렉터와 단일 금속층 구조로 설계된 SiGe HBT의 전기적 특성 (Electrical Properties of SiGe HBTs designed with Bottom Collector and Single Metal Layer Structures)

  • 최아람;최상식;김준식;윤석남;김상훈;심규환
    • 한국전기전자재료학회논문지
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    • 제20권8호
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    • pp.661-665
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    • 2007
  • This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence $(<200^{\circ}C)$ on electrical properties. The feasible application in $1{\sim}2GHz$ frequency from measured data $BV_{CEO}{\sim}10V,\;f_T{\sim}14GHz,\;{\beta}{\simeq}110,\;NF{\sim}1dB$ using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.