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Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer  

Lee, Sang-Heung (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
Kim, Sang-Hoon (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
Lee, Ja-Yol (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
Bae, Hyun-Cheol (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
Lee, Seung-Yun (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
Kang, Jin-Yeong (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
Kim, Bo-Woo (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.6, no.2, 2006 , pp. 114-118 More about this Journal
Abstract
In this paper, the effect of base and collector structures on DC, small signal characteristics of SiGe HBTs fabricated by RPCVD was investigated. The structure of SiGe HBTs was designed into four types as follows: SiGe HBT structures which are standard, apply extrinsic-base SEG selective epitaxial growth (SEG), apply selective collector implantation (SCI), and apply both extrinsic-base SEG and SCI. We verified the devices could be applied to the fabrication of RFIC chip through a fully integrated 2.4 GHz down-conversion mixer.
Keywords
SiGe; HBT;
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