Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Characteristics of $SiN_x$ films on wet-etched Si for field emission device

전계 방출 소자용으로 제조한 단결정 실리콘 기판에 증착된 실리콘 질화막에 대한 특성 연구

  • Jung, Jae-Hoon (Division of Electronics and Information Technology, KIST) ;
  • Ju, Byeong-Kwon (Division of Electronics and Information Technology, KIST) ;
  • Lee, Yun-Hi (Division of Electronics and Information Technology, KIST) ;
  • Oh, Myung-Hwan (Division of Electronics and Information Technology, KIST) ;
  • Jang, Jin (Department of Physics, Kyung Hee University)
  • 정재훈 (한국과학기술연구원 정보전자연구부) ;
  • 주병권 (한국과학기술연구원 정보전자연구부) ;
  • 이윤희 (한국과학기술연구원 정보전자연구부) ;
  • 오명환 (한국과학기술연구원 정보전자연구부) ;
  • 장진 (경희대학교 물리학과)
  • Published : 1995.07.20
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Abstract

$SiN_x$ films deposited on bare Si and wet-etched Si by RPCVD were fabricated to investigated the effect of wet-etched surface of Si on the characteristics of the interface between $SiN_x$ and Si. FT-IR spectra on each film showed similar characteristics. However, it was confirmed that the electric characteristics(I-V, C-V) of the interface between $SiN_x$ and Si have been degraded by the wet etching process of Si, which is applied for the formation of Si field emitter array. Therefore, we suggest that the stacked structure of insulating layer with good interface characteristics is desirable for FED application.

Keywords