• Korean Journal of Remote Sensing
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• v.10 no.2
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• pp.17-35
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• 1994

A semi-empirical model for microwave polarimetric radar backscattering from bare soil surfaces was developed using polarmetric radar measurements and the knowledge based on the theoretical and numerical solutions. The microwave polarimetric backscatter measurements were conducted for bare soil surfaces under a variety of roughness and moisture conditions at L-, C-, and X-band frequencies at incidence angles ranging from 10` to 70`. Since the accrate target parameters as well as the radar parameters are necessary for radar scattering modeling, a complete and accurate set of ground truth data were also collected using a laser profile meter and dielectric probes for each surface condition, from which accurate measurements were made of the rms height, correlation length, and dielectric constant. At first, the angular and spectral dependencies of the measured radar backscatter for a wide range of roughnesses and moisture conditions are examined. Then, the measured scattering behavior was tested using theoretical and numerical solutions. Based on the experimental observations and the theoretical and numerical solutions, a semi-empirical model was developed for backscattering coeffients in terms of the surface roughness parameters and the relative dielectric constant of the soil surface. The model was found to yield very good agreement with the backscattering measurements of this study as well as with independent measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.129-133
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• 2019

TiN thin films were fabricated using an unbalanced magnetron sputtering (UBMS) system, and their structure and surface characteristics as well as their optical and tribological properties were evaluated. The hardness, elastic modulus, adhesive force, surface roughness, and transmittance of the Ti thin films fabricated using the UBMS system were 11.5 GPa, 103 GPa, 27.5 N, 2.45 nm and 20%, respectively. The TiN films prepared with various proportions of nitrogen as the reaction gas exhibited maximum values for the hardness, elastic modulus, critical load, RMS roughness and transmittance of approximately 19.2 GPa, 182 GPa, 27.3 N, 0.98 nm, and 85%, respectively. Moreover, the TiN thin film fabricated under the condition of 30 sccm nitrogen gas showed the optimal physical properties. In summary, the TiN thin films fabricated using the UBMS system exhibited excellent hardness, elastic modulus, adhesion, and smooth surface in addition to good hydrophilic properties.

• Current Applied Physics
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• v.18 no.12
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.232-235
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• 2002

An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

• Progress in Superconductivity and Cryogenics
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• v.10 no.2
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• pp.20-23
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• 2008

[ $La_2Zr_2O_7$] (LZO) buffer layers were deposited on biaxially textured Ni-W substrates by chemical solution deposition method (CSD). In this study, the effect of $B_2O_3$ addition on texture and surface roughness of LZO films was investigated. The alkoxide-based precursor solution was employed to synthesize the precursor solution of LZO and the solution was coated on biaxially textured Ni-W substrates and subsequently annealed at $900^{\circ}C$ for crystallization. The pure LZO film without $B_2O_3$ addition showed a (222) reflection in the X-ray diffraction (XRD) profile. The intensity of (222) reflection was enhanced and more rough surface was obtained after further repetition of coating. Contrary to this, the LZO film prepared by $B_2O_3$ added precursor solution shows well-developed (400) reflection peak in the XRD profile and excellent biaxial texture (${\Delta}{\theta}=4.3^{\circ}$, ${\Delta}{\phi}=6.8^{\circ}$). The surface roughness of LZO films were also improved by addition of $B_2O_3$ even after multicoating ($R_{rms}{\sim}3.1nm$). It was shown that the LZO film with smooth surface and biaxial texture was grown on the biaxially textured Ni-W substrates with addition of $B_2O_3$ in the precursor solution.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.623-624
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• 2004

The coating and estimation of gas and moisture barriers on polymer and glass substrates are receiving very much attention in passivation of organic light emitting devices (OLEDs). In this study, the encapsulation and lifetime measurement techniques of OLEDs were presented. The degradation mechanisms of bare and encapsulated OLEDs were investigated by the visual lifetime measurement (VLM) system with the parameters such as a pixel luminance(L), a luminance rms roughness(dL), a brightness area ratio(R), an edge degradation depth(D), etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.923-929
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• 2006

Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.

• Proceedings of the Korea Water Resources Association Conference
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• 2005.05b
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• pp.314-318
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• 2005

잠실 및 신곡 수중보의 영향을 모의할 수 있도록 개선된 FLDWAV 모형을 한강 하류부의 하천구간에 적용하여 모형의 보정을 수행하였다. FLDWAV 모형에 포함된 자동추정 기법을 적용하여 부분 선형함수 가변 조도계수 모형의 매개변수를 추정하였다 팔당대교부터 전류까지의 하천구간을 3개 구간으로 구분하고, 유량 등급별 조도계수의 초기 가정치를 변화시켜 가며 각 경우에 대하여 홍수사상별로 매개변수 추정을 수행하였다. 최소유량(영) 등급 및 최대유량 등급에 대한 조도계수 추정치들은 초기 가정 값에 민감하여 초기치가 최종 추정치로 종료되는 경우가 다수 발생하였다. 대부분의 홍수사상에 대하여 추정 매개변수를 사용한 계산수위와 관측수위의 편차 합은 영에 근접하나, RMS 오차는 다양한 값들을 나타내었다. 양의 오차들과 음의 오차들이 서로 상쇄됨으로써 편차가 영에 근접하게 되는 경우가 빈번히 발생하였으며, 이는 편차 합을 최소화하는 목적함수를 만족시키는 최적해가 유일하지 않음을 의미한다.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.676-680
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• 2016

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at $400^{\circ}C$. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of $12.91cm^2/V.s$, a low swing of 0.80 V/decade, $V_{th}$ of 5.78 V, and a high $I_{on/off}$ ratio of $2.52{\times}10^6$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.321-324
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• 2013

In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm ${\times}$ 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg's law ($2dsin{\theta}=n{\lambda}$) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.