Growth and Characterization of ZnO Thin Films on R-plane Sapphire Substrates by Plasma Assisted Molecular Beam Epitaxy |
Han Seok-Kyu
(충남대학교 재료공학과)
Hong Soon-Ku (충남대학교 재료공학과) Lee Jae-Wook (한국과학기술원 신소재공학과) Lee Jeong-Yong (한국과학기술원 신소재공학과) |
1 | F. Bernardini, V. Fiorentini, and D. Vanderbilt, 'Spontaneous polarization and piezoelectricconstants of III-V nitrides', Phys. Rev. B, Vol. 56, No. 16, p. R10024, 1997 DOI |
2 | J. Narayan, K. Dovidenko, A. K. Sharma, and S. Oktyabrsky, 'Defects and interfaces in epitaxial and heterostructures', J. Appl. Phys., Vol. 84, No.5, p. 2597, 1998 DOI ScienceOn |
3 | D. S. Li, H. Chen, H. B. Yu, X. H. Zheng, Q. Huang, and J. M. Zhou, 'Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition', J. Crystal Growth, Vol. 265, p. 107, 2004 DOI ScienceOn |
4 | S. K. Hong, T. Hanada, H. J. Ko, Y. Chen, T. Yao, D. Imai, K. Araki, M. Shinohara, K. Saitoh, and M. Terauchi, 'Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN', Phys, Rev. B, Vol. 65, No. 11, p. 115331, 2002 DOI ScienceOn |
5 | O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, 'Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures', J Appl, Phys., Vol. 85, No.6, p. 3222, 1999 DOI ScienceOn |
6 | A. Hangleiter, J. S. Im, H. Kollmer, S. Heppel, J. Off, and F. Scholz, 'The role of piezoelectric fields in GaN-based quantum wells', MRS Internet Journal of Nitride Semiconductor Research, Vol. 3, p. 15, 1998 DOI |
7 | F. Bernardini and V. Fiorentini, 'Macroscopic polarization and band offsets at nitride heterojunctions', Phys. Rev. B, Vol. 57, No. 16, p. R9427, 1998 |
8 | T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura, 'Quantum-confined stark effect in an AlGaN/GaN/ AlGaN single quantum well structure', Jap, J. Appl. Phys., Part 2, Vol. 38, No. 8B, p. L914, 1999 DOI |
9 | G. Vaschenko, D. Patel, C. S. Menoni, N. F. Gardner, J. Sun, W. Gotz, C. N. Tome, and B. Clausen, 'Significant strain dependence of piezoelectric constants in quantum wells', Phys. Rev. B, Vol. 64, No. 24, p. 241308, 2001 DOI ScienceOn |
10 | L. Calcagnile, G. Coli, M. De Vittorio, R. Rinaldi, P. V. Giugno, R. Cingolani, L. Vanzetti, L. Sorba, and A. Franciosi, 'Excitonic nonlinearities in wide gap II-VI multiple quantum wells', J. Crystal Growth, Vol. 159, No. 1-4, p. 793, 1996 DOI ScienceOn |
11 | A. Chakraborty, H. Xing, M. D. Craven, S. Keller, T. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, 'Nonpolar a-plane p-type GaN and pn junction diodes', J. Appl, Phys., Vol. 96, No.8, p. 4494, 2004 DOI ScienceOn |
12 | J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, 'Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition', Appl. Phys. Lett., Vol. 61, No. 11, p. 1290, 1992 |
13 | V. Fiorentini, F. Bernardini, F. D. Sala, A. D. Carlo, and P. Lugli, 'Effects of macroscopic polarization in III-V nitride multiple quantum wells', Phys. Rev. B, Vol. 60, No. 12, p. 8849, 1999 DOI |
14 | P. Walterelt, O. Brandt, A. Trampert, H. T. Grahn, J. Mennlger, M. Ramstelner, M. Relche, and K. H. Ploog, 'Nitride semi-conductors free of electrostatic fields for efficient white light-emitting diodes', Nature, Vol. 406, p, 865, 2000 DOI ScienceOn |