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http://dx.doi.org/10.4313/JKEM.2006.19.10.923

Growth and Characterization of ZnO Thin Films on R-plane Sapphire Substrates by Plasma Assisted Molecular Beam Epitaxy  

Han Seok-Kyu (충남대학교 재료공학과)
Hong Soon-Ku (충남대학교 재료공학과)
Lee Jae-Wook (한국과학기술원 신소재공학과)
Lee Jeong-Yong (한국과학기술원 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.10, 2006 , pp. 923-929 More about this Journal
Abstract
Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.
Keywords
ZnO; MBE; R-plane $Al_2O_3$; Nonpolar substrate; Polarization;
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