• Journal of Ginseng Research
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• v.38 no.3
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• pp.173-179
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• 2014

Background: Ginsenosides are the major components responsible for the biochemical and pharmacological actions of ginseng, and have been shown to have various biological activities. In this study, we investigated the antiviral activities of seven ginsenosides [protopanaxatriol (PT) type: Re, Rf, and Rg2; protopanaxadiol (PD) type: Rb1, Rb2, Rc, and Rd)] against coxsackievirus B3 (CVB3), enterovirus 71 (EV71), and human rhinovirus 3 (HRV3). Methods: Assays of antiviral activity and cytotoxicity were evaluated by the sulforhodamine B method using the cytopathic effect (CPE) reduction assay. Results: The antiviral assays demonstrated that, of the seven ginsenosides, the PT-type ginsenosides (Re, Rf, and Rg2) possess significant antiviral activities against CVB3 and HRV3 at a concentration of $100{\mu}g/mL$. Among the PT-type ginsenosides, only ginsenoside Rg2 showed significant anti-EV71 activity with no cytotoxicity to cells at $100{\mu}g/mL$. The PD-type ginsenosides (Rb1, Rb2, Rc, and Rd), by contrast, did not show any significant antiviral activity against CVB3, EV71, and HRV3, and exhibited cytotoxic effects to virus-infected cells. Notably, the antiviral efficacies of PT-type ginsenosides were comparable to those of ribavirin, a commonly used antiviral drug. Conclusion: Collectively, our findings suggest that the ginsenosides Re, Rf, and Rg2 have the potential to be effective in the treatment of CVB3, EV71, and HRV3 infection.

• Journal of Advanced Navigation Technology
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• v.1 no.1
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• pp.23-34
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• 1997

A multi-channel digital GPS receiver has been developed including a RF-to-IF engine (engine 1), a digital signal processing engine (engine 2) with a microprocessor interfacing, and a navigation software. A high speed SiGe heterojunction bipolar transistor (HBT) as a active device has been mounted on chip-on-board (COB) type hybrid ICs such as LNA, mixer, and VCO in RF front-end of the engine 1 board. A 6-channel digital correlator together with a real-time clock and a microprocessor interface has been realized using an Altera Flex 10K FPGA as well as ASIC technology. Navigation software controlling the correlator for GPS signal tracking, retrieval and storing a message retrieval, and position calculation has been implemented. The GPS receiver was tested using a single channel STR2770 simulator. Successful navigation message retrieval and position determination was confirmed.

• Aerospace Engineering and Technology
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• v.6 no.1
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• pp.83-91
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• 2007

An experimental verification of multipactor(MP) discharge for S-band diplexer as a sample DUT for space application by an in-house MP test facility is proposed. The designed diplexer having two BPFs for Rx and Tx is applied to a design of five pole inter-digital cavity type band pass filter with chebyshev response, it has 2.7 % bandwidth centered at 2.232 and 2.055 GHz for Rx, Tx, respectively. To avoid the MP discharge, the accurate design and analysis methods based on 3D EM field analysis are considered. The proposed in-house MP test facility consists of a phase detecting system using a doubly balanced mixer as a simple, low cost and real time MP test method compared with results of previously well-known MP detection systems as cross reference methods. The calculated MP threshold RF input power is 43.13 dBm. The measured one is 43 dBm and 44 dBm for CW, pulsed mode test, respectively.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.5
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• pp.509-516
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• 2004

High-performance Si integrated passive process was developed using thick oxidation process and Cu-BCB process. This passive process leads to low-cost and high-quality RF module with a small form factor. The fabricated spiral inductor with 225 um inner diameter and 2.5 turns showed the inductance of 2.7 nH and the quality factor more than 30 in the frequency region of 1 ㎓ and above. Also WLCSP-type integrated passive devices were fabricated using the high-performance spiral inductors. The fabricated low pass filter had a parallel-resonance circuit inside the spiral inductor to suppress 2nd harmonics and showed about 0.5 ㏈ insertion loss at 2.45 ㎓. And also the high/low-pass balun had the insertion loss less than 0.5 ㏈ and the phase difference of 182 degrees at 2.45 ㎓.

• Journal of Digital Contents Society
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• v.16 no.1
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• pp.97-104
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• 2015

The conventional 1 Hall sensor-type water gauge has some defects that it can not detect counterflow and low-speed flow of water, and it also generates power consumption during even sleep mode. In this paper, a low-power consumption wireless digital remote water gauge with a counterflow detection capability is proposed. The proposed water gauge detects the direction and amount of water flow by using the three Hall sensors placed at $120^{\circ}$ intervals with 8-year national standard life durability. The water gauge with three Hall sensors works without error regardless of water speed does not generate power dissipation during sleep mode by presented reading algorithm for bew water gauge. The proposed water gauge is designed to send its ID, current time and counting value to repeater or central control center with specified frequency by RF Module.

• Journal of the Korean Solar Energy Society
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• v.33 no.2
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.7
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• pp.1289-1295
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• 2007

In this paper, we implemented high-performance concurrent control system which manages whole RF systems with digital type and communicates with remote station on both wire and wireless networking. It consists of FPGA (Field Programmable Gate Array) part which controls forward/reverse LPA (Linear Power Amplifier), forward/reverse LNA (Low Noise Amplifier), channel cut wire/wireless TCP/IP, etc, master microprocessor (AVR), which manages the whole control system, Slave microprocessor which communicates SA (Spectrum Analyzer) and observes frequency spectrum of each channel with the resolution of 5KHz, 10 channel card microprocessor which independently observes each channel card and sets frequency synthesizer in channel cut and other peripherals and logics. The whole system is divided to two parts of H/W (hardware) and S/W (software) considering operational efficiency and concurrency, and implementation and cost. H/W consists of FPGA and microprocessor. We expected the optimized operation through H/W and SW co-design and hybrid H/W architecture.

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.231-236
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• 2018

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.