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http://dx.doi.org/10.7836/kses.2013.33.2.011

Properties of Silicon Nitride Deposited by RF-PECVD for C-Si solar cell  

Park, Je-Jun (Dept.of Electronic Engineering, Chungnam National University)
Kim, Jin-Kuk (Dept. of Semiconductor Engineering, Chungbuk National University)
Song, Hee-Eun (Korea Institute of Energy Research)
Kang, Min-Gu (Korea Institute of Energy Research)
Kang, Gi-Hwan (Korea Institute of Energy Research)
Lee, Hi-Deok (Dept.of Electronic Engineering, Chungnam National University)
Publication Information
Journal of the Korean Solar Energy Society / v.33, no.2, 2013 , pp. 11-17 More about this Journal
Abstract
Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.
Keywords
effective Carrier lifetime; Anti-reflection coating; SiNx; Silicon solar cell; PECVD (plasma-enhanced chemical vapor deposition);
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