• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.172-173
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• 2012

최근 의료산업에서는 동영상 구현이 가능한 직접 방식의 X-선 검측센서에서 X-ray 흡수효율이 좋은 반도체센서와 성숙된 기술. 본 연구에서는 non-alkali 기판에 evaporation 및 RF magnetron sputtering법으로 기판온도를 증가시키며 CdTe막을 증착하였다. 또한, RF magnetron sputtering을 이용하여 상온에서 증착한 CdTe막을 진공 및 대기 중에서 후열처리한 후 미세구조 변화를 관찰하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.183-183
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• 2011

TTFT(Transparent TFT)의 유전체로 사용되는 절연층으로 사용이 기대되는 yttrium oxide를 ITO 위에 RF magnetron sputtering법으로 상온 증착하고 구조적 특성을 분석하고 조성 및 표면 상태를 확인하였으며 유전 특성을 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

• Textile Coloration and Finishing
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• v.29 no.1
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• pp.18-24
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• 2017

Meta-aramid fabric has been widely used as the reinforcement of composites due to its high flame resistance and tearing strength. Functionality such as abrasion resistance of fabric is very important for specialty fabrics used in car racing suits. In this study, to improve abrasion resistance property of meta-aramid fabric, silicon deposition was conducted by utilizing RF magnetron sputtering. The sputtering process parameters effects were investigated as sputtering power and substrate temperature. The obtained results suggest that the silicon deposition on the meta-aramid fabric has obvious effect upon increasing the abrasion resistance, the thermal insulation and the electric resistance condition for silicon deposition was established. In conclusion, the results of this study have made it possible to manufacture meta-aramids with higher abrasion strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.548-553
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• 2005

Trivalent cerium$(Ce^{3+})$ activated YAG (yttrium aluminum garnet, $Y_3Al_5O_{12})$) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were $O_2/(Ar+O_2)$ gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio $O_2/(Ar+O_2)$. High quality YAG:Ce thin films could be obtained at the gas ratio of $50\%$ oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.139-146
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• 2000

The development of high performance materials is very important subject in order to enhance the properties of bearings whose role is to transfer energy harmoniously by reducing the problem of friction and wear down, etc. between the interacting solid surfaces in relative motion under high loads in comply with mechanical operating mechanism of engines. In this study, several (100-x)Al-xSn coating films (where x=85, 75, 65 atomic % at Al) on substrates which are abt. 2mm thickenss of Kelmet layer sintered back steel were prepared by using RF sputtering system. These coating films were observed the morphology by SEM(Scanning Electron Microscope) and investigated the crystal structure by XRD(X-ray Diffractor) for their properties. And friction coefficient of these films was measured by ball-on-disc tester for their tribological properties. From the experimental results, it was shown that high performance properties of bearing can be improved greatly by controlling the composition and morphology of material surface with effective use of the plasma-assisted sputtering process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.509-512
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• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.897-900
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• 2000

Annealing dependencies of the fatigue properties of SrBi$_2$Ta$_2$$O_{9}$ thin films were observed as function of substrate temperature(400-50$0^{\circ}C$) by the rf magnetron sputtering method. With increasing annealing temperature from $600^{\circ}C$ to 85$0^{\circ}C$, flourite phase was crystalized to $650^{\circ}C$ and Bi-layered perovskite phase was crystalized above $700^{\circ}C$. The fatigue characteristics of SBT thin films deposited on Pt/TiO$_2$/SiO$_2$/Si substrate did not change up to 101o switching cycles.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.509-512
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• 2001

Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200$^{\circ}C$ of substrate temperature and 15 mTorr of working Pressure. The leakage current density was less then 1.3${\times}$10$\^$-7/ A/$\textrm{cm}^2$. And it was also investigated the etching properties of deposited AIN thin films for application.