Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.11a
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- Pages.509-512
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- 2001
Characteristics of AIN thin film using RF Magnetron Sputtering
RF Magnetron Sputtering 법으로 층착된 AIN 박막의 특성
Abstract
Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200