• 한국진공학회지
• /
• 제1권1호
• /
• pp.162-167
• /
• 1992

반응성 RF 스파타 증착법으로 스테인레스 스틸 기판 위에 TiC 박막과 TiN 박막을 증착하였다. 스파타기체로 Ar를, 반응기체로 C2H2와 N2 기체를 사용하였다. 박막의 증착율 은 RF 출력증가에 따라 선형적으로 증가하였으며 스파타기체에 대한 반응 기체의 분압비 증가에 따라 급격하게 감소하였다. 박막의 성분은 TiC 박막의 경우 분압비 0.03에서, TiN 박막의 경우 분압비 0.05에서 stoichiometric한 성분이 된다. 이 TiC, TiN 박막의 morphology와 미세구조 및 계면을 AES, SEM 그리고 TEM으로 조사하였다. 또한 N+ 이온 을 주입하여 N+ 이온 주입효과와 열처리 효과도 조사하였다.

• Journal of Magnetics
• /
• 제13권4호
• /
• pp.163-166
• /
• 2008

Multiferroic $CoCr_2O_4$ film was deposited on MgO and $MgAl_2O_4$ substrates by the rf-sputtering process. The films were prepared at an RF-magnetron sputtering power of 50 W and a pressure of 10 mtorr (20 sccm in Ar), and at substrate temperatures of $550^{\circ}C$. The crystal structure was determined to be a spinel (Fd-3m) structure by means of X-ray diffraction (XRD) with Cu $K{\yen}{\acute{a}}$ radiation. The thickness and morphology of the films were measured by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The magnetic properties were measured using a Superconducting Quantum Interference Device (SQIUD) magnetometer. While the ferrimagnetic transitions were observed at about 93 K, which was determined as the Neel temperature, the magnetic properties all show different behaviors. The differences between the magnetic properties can be explained by the stress effects between $CoCr_2O_4$ and the substrates of MgO and $MgAl_2O_4$.

• 한국표면공학회지
• /
• 제38권2호
• /
• pp.69-72
• /
• 2005

ITO-Al-ITO multi-layers were deposited at room temperature by RF magnetron sputtering on polyethylene terephthalate (PET). The films were deposited at various pressures of $8\times10^{-4},\;1\times10^{-3},\;4\times10^{-3},\;8\times10^{-3}\;and\;1\times10^{-2}$ Torr. A correlation between microstructure and electro-optical properties was studied. Films deposited? at low pressure have higher transmission, and lower reflectance and resistance than film deposited at high pressure. Sheet resistance, transmission, and reflectance were $141.6\Omega/\Box\;88\%\;and\;6.8\%$ resectively when the deposition pressure was $8\times10^{-4}$ torr, that was the optimum condition.

• 한국전기전자재료학회논문지
• /
• 제14권9호
• /
• pp.731-735
• /
• 2001

S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
• /
• pp.141-144
• /
• 2003

This study proposes ZnO thin film as a piezoelectric material for SAW (surface acoustic wave) filter. The ZnO thin film with thickness $2.6{\mu}m$ was deposited (0001)-oriented sapphire by RF magnetron sputtering technique. IDTs (inter-digital transducers) electrodes were patterned upon SAW filter mask with solid finger structure unapodized using lift-off method on ZnO piezoelectric thin film. SAW propagation velocity was measured with the center frequency by HP 8753C network analyzer. A fabricated ZnO SAW filter exhibited a high propagation velocity of 5433 $^m/s$ and relatively insertion loss of -53.391dB at $\lambda=80{\mu}m$. The side-lobe attenuation of the center frequency was about 17dB. When the wavelength was $80{\mu}m$ $(\lambda/4=20{\mu}m)$, the center frequency was 67.907 MHz. $k^2$ (electromechanical coupling coefficient) was 15.84 %.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.313-314
• /
• 2007

AlN is used a wide variety of applications such as electroacoustic devices, blue diode and metal-insulator-semiconductor structures. AlN thin films were deposited on Si substrates by rf sputter technique with low temperature process. The orientation and morphology of AlN thin films at various power in the range from 150 to 300 w was studied. X-ray diffraction (XRD), full width at half-maximum (FWHM) and field emission scanning electron microscopy were employed to characterize the deposited films. The c-axis orientation along (002) Plane at experimental results was enhanced with the increasing of the rf power from 150 to 300 w and the surface morphology of the films showed a homogeneous and nano-sized microstructure.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2006년도 춘계학술대회
• /
• pp.154-157
• /
• 2006

The counter electrode widely used in DSCs (Dye-sensitized Solar Cells) is constructed of conducting glass substrates coated with Pt films, where the platium acts as a catalyst. Pt counter electrodes in DSCs are one important component. It is expected that characteristics of Pt electrodes strongly depend on fabrication process and its surface condition. In this study, Pt counter electrode surface of DSC is deposited by reactive RF magnetron sputtering under the conditions of Ar 5mtorr, RF power of 120w and substrate temperature of $100^{\circ}C$. Surface morphology of Pt electrodes was investigated by FE-SEM and AFM. And this paper shows our recent results and technology to fabricate the new designed cell with Pt electrodes deposited by sputtering method. We have achieved fill factor 65% and photoelectric conversion efficiency around 2.6% as the best results of new designed DSCs structure.

• 한국표면공학회지
• /
• 제39권1호
• /
• pp.9-12
• /
• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

• 마이크로전자및패키징학회지
• /
• 제12권3호
• /
• pp.207-212
• /
• 2005

Al, Ti, Ta 및 Cr 박막을 DC 마그네트론 스퍼터링방법으로 0 - 800 W의 RF 바이어스로 폴리이미드 기판에 가하면서 증착한 후 금속박막의 접착성을 연구하였다. 접착력은 $90^{\circ}$ 필 테스트로 평가하였다. 필 테스트 결과 모든 시편에서 기판에 RF 바이어스를 가하면 접착력이 향상되었다. RF바이어스를 가한 시편은 필링 도중 계면근처의 폴리이미드 내에서 파괴가 일어나면서 소성변형이 심하게 발생하였다. 단면 투과전자현미경 관찰에 의하면 금속/폴리이미드 계면은 분명하지 않고 복잡한 형상을 띄고 있었다. 이런 복잡한 계면은 RF 바이어스의 영향으로 생겼으며 접착력 향상의 주요 요인이었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.603-603
• /
• 2013

3D 배열구조의 Vertical nanowire Integrated Nanogenerator (VING)은 낮은 출력, 유연 기판 상에 부적합, 나노선의 부서지기 쉬움, 장기 안정성, 균일한 나노선의 성장을 필요로 하는 문제점을 가지고 있다. 본 연구에서는 이러한 VING방식의 단점을 보완하여 2D 배열 구조의 Lateral nanowire Integrated Nanogenerator (LING)로 고출력 전압, 유연기판의 상에 적합 등을 개선하는 방향으로 연구를 하였다. 본 연구의 실험 방법으로는 RF magnetron sputter를 이용하여 AZO Seedlayer를 제작하였으며 제작된 AZO Seedlayer를 photolithography 공정으로 제작하였다. 패터닝된 샘플을 Hydro thermal synthesis method로 성장시켰다. 구조적 분석으로는 XRD, FE-SEM 등을 이용하여 측정하였다.