• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.218-219
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• 2002

Recently, RF lumped-element devices are demanded strongly in application of hand-held mobile communication equipments. Many workers have been reported RF integrated inductor as well as air cores. In order to achieve the high Q value, they removed backside of substrate by micro machining process [1] and also another MEMS-like approach such as levitated structure [2]. These approaches are capable of suppressing the parasitic effects, but low reproducibility and high cost problems remain. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2233-2235
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• 2000

We present the characteristics of microwave and mechanical behavior for the electrostatically actuated z-shaped laterally driven micriomachined CPW SPST(Single Pole Single Throw) Switch, which is for the application of the microwave communication systems. In this paper, we have aimed to maintain advantages. such as low insertion loss and low power consumption that the previously developed RF MEMS Switch has and minimize also stiction problem. enhance the microwave characteristics by etching of substrate beneath the switch, realize the pull-in voltage of below 30V. The optimized design parameters of the MEMS Switch can be selected by the analysis of the mechanical behavior and the use of ANSYS simulation method.

• Journal of Korea Society of Digital Industry and Information Management
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• v.17 no.3
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• pp.9-15
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• 2021

In this paper, the Embedded MEMS system to the power apparatus used Edge Impulse machine learning tools and therefore an improved predictive system design is implemented. The proposed MEMS embedded system is developed based on nRF52840 system and the sensor with 3-Axis Digital Magnetometer, I2C interface and magnetic measurable range ±120 uT, BM1422AGMV which incorporates magneto impedance elements to detect magnetic field and the ARM M4 32-bit processor controller circuit in a small package. The MEMS embedded platform is consisted with Edge Impulse Machine Learning and system driver implementation between hardware and software drivers using SensorQ which is special queue including user application temporary sensor data. In this paper by experimenting, TensorFlow machine learning training output is applied to the power apparatus for analyzing the status such as "Normal, Warning, Hazard" and predicting the performance at level of 99.6% accuracy and 0.01 loss.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.1-6
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• 2011

We have developed the process of forming one body S-type cantilever probe in the recessed trench for fine-pitched MEMS probe card. The probe (cantilever beam and pyramid tip) was formed using Deep RIE etching and wet etching. The pyramid tip was formed by the wet etching using KOH and TMAH. The process of forming the curved probe was also developed by the wet etching. Therefore, the fabricated probe is applicable for the probe card for DRAM, Flash memory and RF devices tests and probe tip for IC test socket.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2217-2220
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• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.172-176
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• 2013

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.6
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• pp.553-561
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• 2011

A theoretical approach is carried out to predict the quality factors of flexible modes of a microcantilever on a squeeze-film. The frequency response function of an inertially-excited microcantilever beam is derived using an Euler-Bernoulli beam theory. The external force due to squeeze-film phenomenon is developed from the Reynolds equation. Slip boundary conditions are employed at the interfaces between the fluid and the structure to consider the gas rarefaction effect, and pressure boundary condition at both ends of fluid analysis region is enhanced to increase the exactness of predicted quality factors. To the end, an approximate equation is derived for the first bending mode of the microcantilever. Using the approximate equation, the quality factors of the second and third bending modes are calculated and compared with experimental results of previously reported work. The comparison shows the feasibility of the current approach.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.91-95
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• 2014

This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of $1.04{\times}1.04{\times}0.4mm^3$ had an average shear strength of 10.425 $kg/mm^2$, and the leakage rate of all chips was lower than $1.2{\times}10^{-5}$ atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.