• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.29-33
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• 2021

A 5.8-GHz 1W wireless power transmission system was used for charging a smart phone. The voltage of one RF power receiver with antenna was not enough for charging. Several power receivers for charging a smart phone was connected serially. The voltage of several RF power receivers are highly enough for charging a smart phone within 50cm. However, the lack of current from small capacitances of RF-DC converters is not suitable for charging smart phone. It means very long charging time. In this paper, the voltage multiplier circuits for RF-DC converters were analyzed to increase the current and voltage at the same time to reduce the charging time in smartphone RF wireless charging. Through the analysis of multiplier circuits, the 7-stage parallel multiplier circuit with voltage-doubler units are suitable for charging the smartphone, which supplies 5V and 700mA at 3V@5.8GHz.

• 한국통신학회논문지
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• 제32권3A호
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• pp.319-323
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• 2007

본 논문에서는 50-1000 MHz의 주파수 범위에서 전력과 임피던스의 표준을 이용하여 RF전압을 자동으로 정밀 측정을 하였다. RF-DC차를 결정하기 위하여 동축형 미소열량계와 자동 회로망 분석기가 이용되었으며, 총불확도는 약 1 % 이다. 써미스터 마운트의 실효효율과 열전압 변환기의 RF-DC차를 측정하기 위하여 HP 컴퓨터와 Commodore 컴퓨터, 그리고 IEEE-488 인터페이스 버스를 이용하고, 측정하는 전체과정이 자체 개발한 프로그램에 의해 자동으로 수행되었다.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.85-88
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• 2017

In this paper, we have designed and fabricated a RF-DC voltage multiplier for 5.8GHz microwave wireless power transmission. In order to obtain higher voltage, the RF-DC voltage multiplier with 10 diodes (D-10) and the receiver module with an antenna and BPF (Band Pass Filter) was manufactured. The measured and compared results show that the voltages of the proposed one are lower than those of the previous tripler module up to 40cm. However, the voltage of the proposed one with the voltage multiplier is higher than that of the tripler module at the distances of 45cm and 50cm due to the voltage multiplier with 10 diodes.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• 대한전자공학회논문지SD
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• 제47권10호
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• pp.1-6
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• 2010

본 연구에서는 S-파라미터 측정 데이터를 사용하는 RF측정방법으로 short-channel MOSFET의 RF 캐패시턴스 전압(C-V) 곡선을 상온에서 $225^{\circ}C$까지 추출하였으며, 추출된 고온 종속 특성을 엠피리컬하게 모델링하였다. RF C-V 특성곡선의 weak inversion영역에서 온도 변화에 따른 voltage shift가 threshold voltage shift보다 적은 현상이 관찰되었지만, 기존 long-channel C-V 이론 방정식으로 설명할 수 없는 현상임이 입증되었다. 이러한 short-channel C-V 곡선의 고온 종속 모델링을 위해서 새로운 엠피리컬 방정식이 개발되었다. 이 방정식의 정확도는 모델된 C-V곡선과 측정 데이터가 넓은 온도범위에서 잘 일치하는 결과를 관찰함으로써 입증되었다. 또한, 높은 게이트 전압에서는 온도가 증가함에 따라 채널 캐패시턴스 값이 감소하는 것을 확인할 수 있다.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.177-182
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• 2007

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1996년도 Proceedings of the Korea Automatic Control Conference, 11th (KACC); Pohang, Korea; 24-26 Oct. 1996
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• pp.255-258
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• 1996

This paper describes a DC voltage controller for the DC power supply which is constructed using the full-bridged MOS-FET DC-to-RF power inverter and rectifier. The full-bridged MOS-FET DC-to-RF inverter consisting of four MOSFET arrays and an output power transformer has a control function which is able to control the RF output power when the widths of the pulse voltages which are fed to four MOS-FET arrays of the fall-bridged inverter are changed using the pulse width control circuit. The power conversion efficiency of the full-bridged MOS-FET DC-to-RF power inverter was approximately 85 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The RF output voltage from the full-bridged MOS-FET DC-to-RF inverter is fed to the rectifier circuit through the output transformer. The rectifier circuit consists of GaAs schottky diodes and filters, each of which is made of a coil and capacitors. The power conversion efficiency of the rectifier circuit was over 80 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The output voltage of the rectifier circuit was changed from 34.7V to 37.6 V when the duty cycles of the pulse voltages were changed from 30 % to 50 %.

• 전기전자학회논문지
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• 제24권3호
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• pp.853-858
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• 2020

본 논문은 통신기기에서 유입 되는 RF 노이즈에 대해 내성을 가진 OLED용 2-채널 DC-DC 변환기를 제안한다. RF 신호 내성을 위해, 입력전압 변동만큼 감쇠시키는 입력전압 변동감쇠 회로가 내장된다. 양의 전압 V_POS를 출력하는 부스트 변환기는 SPWM-PWM 듀얼모드로 동작하고, 데드 타임을 제어함으로써 전력 효율을 제고한다. V_NEG를 출력하는 인버팅 차지펌프는 2-상 출력 구조로 VCO를 이용한 PFM으로 동작해 작은 리플을 갖도록 설계된다. 0.18 ㎛ BCDMOS 공정으로 시뮬레이션 한 결과, 부스트 변환기 출력전압의 오버슈트와 언더슈트는 10 mV에서 각각 2 mV, 5 mV로 감소하였다. 또한, 2-채널 DC-DC 변환기의 전력효율은 39%~93%을 가졌고, 데드 타임 제어기를 적용한 부스트 변환기의 효율은 종전보다 최대 3% 증가하였다.

• IEIE Transactions on Smart Processing and Computing
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• 제3권4호
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• pp.221-225
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• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.