• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.721-724
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• 2001

In this paper, we present the effect the length the MSL(Microstrip Line) on the oscillation characteristic of the fabricated VCOs(Voltage Controlled Oscillator) designed and analyzed by RF circuit simulator Serenade(ANSOFT Co.) and fabricated by screen printing method on the alumina substrate. We have fabricated VCOs with 3 different MSL length and each MSL length of the VCO is 140mi1, 280mil and 560mi1. The oscillation frequency of each sample(VCO) was tuned to UHF band(750MHz∼900MHz) varying the capacitance. The experimental result shows the phase noise -82∼-97[dBc/Hz] at a 50 [kHz] offset frequency, the pushing figure 94∼318[kHz] at 3${\pm}$0.15[V] and the harmonics 13∼21 [dBc] between MSL length 140mi1s and 560mi1. The frequency and output variation width are 779∼898[MHz], -36∼-33[dBm] at MSL length 140mi1; 818∼836[MHz], -27.19∼-27.06[dBm] at 280mi1;751.54∼751.198[MHz],-33.44∼ -33.31[dBm] at 560mi1. we examined 3 VCOs oscillation characteristic difference through comparison with phase noise, oscillation power and frequency by control voltage change, harmonics and pushing figure for each sample.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.4
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• pp.25-30
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• 1971

Fabrication and measurements of the magnetically tunable YIG band pass or stop filter at X-band are discussed. Using two YIG spheres located at the region of r-f circularly polarized magnetic field between the strip lines, the pass or stop characteristics of the filter are obtained. In the case of band stop, the output level is typically 25db lower than the input power. Contrarily for the pass band, the pass band level is 22db higher than the stop frequency region. The experimental results are in good agreement with the theoretical values of FMR. Further it is shown that the structure can be used for a directional coupler.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.67-72
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• 2013

Temperature is a critical parameter in yield improvement for wafer manufacturing. In chemical vapor deposition (CVD) equipment, crack defect in ceramic heater leads to yield reduction, however, there is no suitable ceramic heater fault detection system for conventional CVD equipment. This paper proposes a short-time zero-crossing rate based fault detection method for the ceramic heater in CVD equipment. The proposed method measures the output signal ($V_{pp}$) of RF filter and extracts the zero-crossing rate (ZCR) as feature vector. The extracted feature vectors have a discriminant power and Gaussian mixture model (GMM) based fault detection method can detect fault in ceramic heater. Experimental results, carried out by measured signals provided by a CVD equipment manufacturer, indicate that the proposed method detects effectively faults in various process conditions.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.71-77
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• 2013

Advanced semiconductor manufacturing technology requires methods to maximize tool efficiency and improve product quality by reducing process variability. Real-time plasma process monitoring and diagnosis have become crucial for fault detection and classification (FDC) and advanced process control (APC). Additional sensors may increase the accuracy of detection of process anomalies, and optical monitoring methods are non-invasive. In this paper, we propose the use of a chromatic data acquisition system for real-time in-situ plasma process monitoring called the Plasma Eyes Chromatic System (PECS). The proposed system was initially tested in a six-inch research tool, and it was then further evaluated for its potential to detect process anomalies in an eight-inch production tool for etching blanket oxide films. Chromatic representation of the PECS output shows a clear correlation with small changes in process parameters, such as RF power, pressure, and gas flow. We also present how the PECS may be adapted as an in-situ plasma arc detector. The proposed system can provide useful indications of a faulty process in a timely and non-invasive manner for successful run-to-run (R2R) control and FDC.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.79-85
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• 1999

In this paper, the resistive mixer for 5.86Hz wireless LAN, main part receiving system, was designed and implemented. The noise characteristics and the linearity in the base band was superior. For the use of local oscillator of mixer, dielectric resonator of stable output and temperature characteristics was designed. For the electrical tuning by the capacitance variation of varactor diode, the microstrip line and magnetic coupling characteristics of the dielectric resonance was used. It was obtained that gain of the proposed resistive mixer containing the RF cable loss, is -13.8dB, the conversion loss of frequency converter is -12 dB, and the output power of local oscillator is 1.67 dBm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.2A
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• pp.201-206
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• 2006

A SPST Switch MMIC which used for Microwave Switch Matrix(MSM) of communications satellite payload with multi-beam function has been designed and fabricated. New RE FET switch configuration has been devised to improve power characteristics and isolation. Input and output return losses are better than another switches reported previously for both On and Off states. The MMIC chips were fabricated in 0.15um GaAs pHEMT process and measured insertion loss less than 2.0dB and isolation more than 63dB in the frequency range of 3GHz$\∼$4GHz. Output 3rd order interceptpoint above 32dBm has been recorded and the value is very high even though the unit pHEMT has gate width of 0.2mm and only four pHEMT are used in the MMTC.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.6 s.336
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• pp.67-74
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• 2005

In this paper, high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a $\lambda$/4 transmission line. The simulation results of the designed 94 GHz balun show return loss of -27.9 dB, coupling of -4.26 dB, and thru of -3.77 dB at 94 GHz, respectively. The isolation and phase difference were 23.5 dB and $180.2^{\circ}$ at 94 GHz. The W-band MIMIC single-balanced mixer was designed using the 0.1 $\mu$m InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency(fT) of 189 GHz and the maximum oscillation frequency(fmax) of 334 GHz. The designed MIMIC single-balanced mixer was fabricated using 0.1 $\mu$m MHEMT MIMIC Process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. Pl dB(1 dB compression point) of input and output were 10 dBm and -13.9 dBm respectively. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.211-212
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• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1350-1359
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• 2008

This paper presents a wideband doubly balanced resistive mixer fabricated using $0.5{\mu}m$ GaAs p-HEMT process. Three baluns are employed in the mixer. LO and RF baluns operating over an 8 to 20 GHz range were implemented with Marchand baluns. In order to reduce chip size, the Marchand baluns were realized by the meandering multicoupled line and inductor lines were inserted to compensate for the meandering effect. IF balun was implemented through a DC-coupled differential amplifier. The size of IF balun is $0.3{\times}0.5\;mm^2$ and the measured amplitude and phase unbalances were less than 1 dB and $5^{\circ}$, respectively from DC to 7 GHz. The mixer is $1.7{\times}1.8\;mm^2$ in size, has a conversion loss of 5 to 11 dB, and an output third order intercept(OIP3) of +10 to +15 dBm at 16 dBm LO power for the operating bandwidth.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.1
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• pp.80-86
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• 2010

This paper describes the development result of S-band Transmitter of STSAT-3 by satellite research center(SaTReC), KAIST. STSAT-3 has two kinds of communication channels, S- band for Telemetry & Command and X-band for mission payload. S-band Transmiiter(STX) consist of modulator, frequency synthesizer, power amp and DC/DC converter. The modulation scheme of STX is FSK(Frequency Shift Keying). The interface between spacecraft OBC and STX is RS-422. The STX is based on modular design. The RF output power of STX is 1.5W(31.7dBm) and BER of STX is under 1E-5. The Test of STX is completed successfully such as functional Test and environmental(vibration, thermal vacuum) Test.