• Journal of Korea Multimedia Society
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• v.14 no.5
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• pp.614-621
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• 2011

This paper presents design of a wide tuning range digitally controlled oscillator(DCO) for Mobile-DTV applications. DCO is the key element of the ADPLL block that generates oscillation frequencies. We proposed a binary delay chain(BDC) structure, for wide tuning range DCO, modifying conventional fixed delay chain. The proposed structure generates oscillation frequencies by delay cell combination which has a variable delay time of $2^i$ in the range of $0{\leq}i{\leq}n-1$. The BOC structure can reduce the number of delay cells because it make possible to select delay cell and resolution. We simulated the proposed DCO by Cadence's Spectre RF tool in 1.8V chartered $0.18{\mu}m$ CMOS process. The simulation results showed 77MHz~2.07GHz frequency range and 3ps resolution. The phase noise yields -101dBc/Hz@1MHz at Mobile-DTV maximum frequency 1675MHz and the power consumption is 5.87mW. The proposed DCO satisfies Mobile-DTV standards such as ATSC-M/H, DVB-H, ISDB-T, T-DMB.

• Transactions on Semiconductor Engineering
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• v.2 no.3
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• pp.1-5
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• 2024

This paper presents a crystal-less reference clock recovery (CR) frequency synthesizer with compensation designed for Bluetooth Low Energy (BLE) Smart-tag applications, operating at frequencies of 32, 72, and 80MHz. In contrast to conventional frequency synthesizers, the proposed design eliminates the need for external components. Using a single-ended antenna to receive a minimal input power of -36dBm at a 2.4GHz signal, the CR synthesizes frequencies by processing the RF signal received through a Low Noise Amplifier ( L N A ) . This approach allows the system to generate a reference clock without relying on a crystal. The received signal is amplified by the LNA and then input to a 16-bit ACC (Automatic Clock Compensation) circuit. The ACC compares the frequency of the received signal with the oscillator output signal, using the synthesis of a 32MHz reference clock through a frequency compensation method. The oscillator is constructed using a Ring Oscillator (RO) with a Frequency Divider, offering three different frequencies (32/72/80MHz) for various system components. The proposed frequency synthesizer is implemented using a 55-nm CMOS process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.861-863
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• 2003

In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.6
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• pp.272-275
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• 2004

A balanced single side-band (SSB) mixer employing a sub-harmonic configuration is designed for up and down conversions in K-band. The designed mixer uses anti-parallel diode (APD) pairs to effectively eliminate even harmonics of the local oscillator (LO) spurious signal. To reduce the odd harmonics of LO at the RF port, we employ a balanced configuration for LO. The fabricated chip shows 12$\pm$2dB of conversion loss and image-rejection ratio of about 20dB for down conversion at RF frequencies of 24-27.5GHz. As an up-conversion mode, the designed chip shows 12dB of conversion loss and image-rejection ratio of 20 ～ 25 dB at RF frequencies of 25 to 27GHz. The odd harmonics of the LO are measured below -37dBc.

• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.237-240
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• 2002

We have studied a RF energy transformation. In this paper, we introduced proximity sensor using RF energy transformation. We used 125kHz RF signal as carrier frequency and BPSK circuit, PNP proximity sensor and designed circuit to transmit to the reader through the antenna with data which sensor had acquired. Micro-controller, oscillator, power amp, FSK Modulation module are included in the circuit. Max 323 chip is applied to analog switch and used to HYP-30R10NA sensor chip.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.6-12
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• 2006

Recently, according to the rapid development of mobile system, the development of relative mobile components has been required, and especially, with the miniaturization of mobile component, the complex with nearby components has been progressed. In this paper, multi-output VC-TCXO (Voltage Controlled-Temperature Compensated Crystal Oscillator) for WCDMA integrates the additional CMOS inverter, so it can be the normal clipped sinewave output and additional CMOS output, and also it can be satisfied the VC-TCXO's requirements for WCDMA system. And the important characteristics of reference oscillator, like phase noise and frequency short term stability, are satisfied with WCDMA(UMTS) system's requirement In this paper, however, 25MHz is used for reference frequency, similarly and practically, we think that it can be used from 10MHz to 40MHz.

• ETRI Journal
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• v.27 no.5
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.16-24
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• 2009

Independent-gate-mode double-gate(IGM-DG) MOSFET overcomes the limitation of 3-terminal device structure, and enables to operate with different voltages for front-gate and back-gate. Therefore, circuit designs becomes not only simple, but also area-efficient due to the controllability of the 4th terminal provided by IGM-DG MOSFETs. In this paper, an RF receiver utilizing IGM-DG MOSFETs is presented and also, the circuit performance is verified by the HSPICE simulations. Besides, the circuit analysis and optimization are performed for various IGM-DG characteristics.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.223-228
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• 2018

In this paper the water sensor using a coaxial cavity resonator is designed and manufactured. The water sensor which can sense water drop linearly has been constructed with voltage controlled oscillator(VCO), coaxial cavity resonator, RF switch, RF detector, A/D converter, DAC and micro controller. The operating frequency range of the designed water sensor is from 2.5GHz to 3.2GHz and the input voltage and current source are 24[V/DC] and 1[A]. The designed sensor circuit includes VCO, RF switch, RF detector which varies the frequency characteristics of the devices in the high frequency of 3GHz. And so we should correct the error of the frequency characteristics of those devices in the sensor circuit. To do this, we make the reference path which switches the signals to the RF detector directly without sending it to the resonator. According to the result of simulation and measurement, we can see that there is 0-50MHz difference between simulated resonator frequency and manufactured resonator frequency.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.519-527
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• 2010

In this paper, we design and implement a broadband LNA(Low Noise Amplifier), a mixer, and oscillators in RF module part for radar detector. For resolving the limitation of the conventional product that the sensitivity is low due to the poor gain flatness, we propose the architecture of RF module part. The proposed RF module part is composed with a broadband 2-stage LNA, a mixer, and three oscillators, and improves the maximum gain and gain flatness for detecting various frequencies. The overall performances of RF module part are above 38 dB conversion gain in whole band and 1 dB gain flatness. These results show that the maximum gain which is the problem of the conventional product is improved 6 dB from 35 dB to 41 dB, and gain flatness is also improved 17 dB from 22 dB to 5 dB.