• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.221-224
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• 2004

This paper has researched on-chip spiral inductor in digital CMOS technology by modeling physical structure based on foundry parameter. To show the possibility of its application to RF design, we designed dual band RF front-end receiver. The simulated receiver have gain of 23/23.5 dB and noise figure of 2.8/3.36 dB at 2.45/5.25 GHz, respectively. It occupies $16mm^2$ in $0.25{\mu}m$ CMOS with 5 metal layer.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.225-230
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• 2013

This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047 dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.172-176
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• 2013

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.230-239
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• 2012

In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.9
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• pp.49-53
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• 2016

A new large-signal model including the voltage-dependent extrinsic gate capacitance for RF channel distribution effect is developed for a high resistivity(HR) silicon-on-insulator(SOI) RF accumulation-mode MOS varactor. The data of voltage-dependent parameters are extracted by using accurate S-parameter optimization, and empirical model equations are constructed by data fitting process. The RF accuracy of this new model is validated by observing excellent agreements between modeled and measured Y11-parameter data in the wide voltage range up to 20 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.18-27
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• 2004

In this paper, we presents an analytical simulation procedure for evaluation in baseband digital modulated signals distortions in the present of RF power amplifier(SSPA) nonlinear behavior and backoff operations of OFDM wireless transmission system. we obtained the optimum nonlinear transfer function of designed SSPA with the SiGe HBT bias currents of OFDM multi-channel wireless transmission system and compared this transfer function to SSPA nonlinear modeling functions mathematically, we finds optimum bias conditions of designed SSPA. With the derived nonlinear modeling function of SSPA, We analysed the PSD characteristics of in-band and out-band output powers of SSPA EVM measurement results of distorted constellation signals with the input power levels of SSPA. The results of paper can be applied to find the SSPA linearly with optimum bias currents and determine the SSPA input backoff bias for AGC control circuits of SSPA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.1
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• pp.70-78
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• 2019

In this paper, modeling of a high-resolution multi-function radar is proposed to simulate radar performance in a war game simulator, called AddSIM. To incorporate the multi-function radar model into the AddSIM, the modeling must comprise a component-based structure consisting of physics, logics, and information blocks. Therefore, we assign the RF hardware of a RADAR as the physic block, a controller as the logics block, and the RF specifications of the RADAR as the information block. Detailed modeling of the physics and logics blocks are addressed, and data structure is also presented on an engineering level. On a multi-target engaged scenario, the performance of the multi-function radar is numerically analyzed and its validation is examined.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1673-1675
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• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.173-178
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• 2012

Using accurate MOSFET substrate parameters obtained by a RF direct extraction method, it is demonstrated that a BSIM4 model with only substrate resistances is not physically valid to apply in the wide range of gate length because of scaling inaccuracy. In order to remove the unphysical problem of the BSIM4, a modified BSIM4 model with additional dielectric substrate capacitance is used and its physical validity is verified by observing excellent gate length scalability.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.317-336
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• 2006