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http://dx.doi.org/10.5573/ieie.2016.53.9.049

A Study on RF Large-Signal Model for High Resistivity SOI MOS Varactor  

Hong, Seoyoung (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.53, no.9, 2016 , pp. 49-53 More about this Journal
Abstract
A new large-signal model including the voltage-dependent extrinsic gate capacitance for RF channel distribution effect is developed for a high resistivity(HR) silicon-on-insulator(SOI) RF accumulation-mode MOS varactor. The data of voltage-dependent parameters are extracted by using accurate S-parameter optimization, and empirical model equations are constructed by data fitting process. The RF accuracy of this new model is validated by observing excellent agreements between modeled and measured Y11-parameter data in the wide voltage range up to 20 GHz.
Keywords
varactor; RF; CMOS; SOI; modeling;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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