• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.196-203
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• 2004

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

• ETRI Journal
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• v.21 no.4
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• pp.1-8
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• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.427-432
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• 2010

To reduce the outage probability and to increase the transmission capacity, the importance of repeaters in cellular systems is increasing. But a RF(Radio Frequency) repeater has a problem that the output of the transmit antenna is partially feedback to the receive antenna, which is feedback interference. In this paper, we proposed adaptive Sign-Sign LMS(Least Mean Square) algorithm using correlations for the performance enhancement of RF repeater. The weight vector is updated by using sign of input signal and error signal to the least squared error of the conventional algorithms. When compared with the conventional method, the proposed canceller achieves the maximum 10 dB performance gain in terms of the MSE(Mean Square Error).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.9C
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• pp.735-742
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• 2010

In this paper, we propose adaptive algorithms for interference cancellation in RF repeaters with multiple transmit and receive antennas. When multiple antennas are used in a repeater, the imperfect isolation between transmit and receive antennas causes the feedback interference which is modeled as multi-input multi-output (MIMO) channel. To remove the feedback interference, we derive the least mean square (LMS) algorithm and the recursive least squares (RLS) algorithm for interference cancellation based on adaptive signal processing techniques. Through computer simulations for the proposed algorithms, we analyze the convergence characteristics and compare the steady-state performance for interference cancellation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.9-16
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• 2000

MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.5
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• pp.395-407
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• 1996

In this paper, we describe the crossover of the parasitic capacitance at the interconnections for the system miniature, analyse ground capacitance and mutual capacitance due to actually coupled line in the ICs or MCMs. From the results of deviding interconnection line with infinite parts, using Green's function with image charge method and moments, we could obtain 70% decrease of system runtime parasitic inductance because of simplicity of transforming formular.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.56-58
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• 2002

A closed form expression for the quality factor of the spiral inductor, methodologically, is presented as a function of the inductance ($L_{ind}$), metal-line width (W), spacing (S), inner and the diameter ($D_i$). For a given inductance, the dependences of quality factor on W, S, and $D_i$ are analyzed, and suggested the design optimization guidelines.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.50-56
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• 2000

The integrated circuit interconnection lines are experimented with patterned ground shields (PGS) at microwave frequencies. Measurement results demonstrate that the PGS can significantly reduce the power loss through the interconnect lines over wide frequency ranges as the PGS shields the lossy silicon substrate. The transmission line characteristics of the PGS interconnect lines are analyzed and identified that the PGS reduces the wave length of the interconnect line.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.303-317
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• 2013

Two novel clocking strategies for a high-speed multi-channel serializer-deserializer (SERDES) are proposed in this paper. Both of the clocking strategies are based on groups, which facilitate flexibility and expansibility of the SERDES. One clocking strategy is applicable to moderate parallel I/O cases, such as high density, short distance, consistent media, high temperature variation, which is used for the serializer array. Each group within the strategy consists of a full-rate phase-locked loop (PLL), a full-rate delay-locked loop (DLL), and two fixed phase alignment (FPA) techniques. The other is applicable to more awful I/O cases such as higher speed, longer distance, inconsistent media, serious crosstalk, which is used for the deserializer array. Each group within the strategy is composed of a PLL and two DLLs. Moreover, a half-rate version is chosen to realize the desired function of 1:2 deserializer. Based on the proposed clocking strategies, two representative ICs for each group of SERDES are designed and fabricated in a standard $0.18{\mu}m$ CMOS technology. Measurement results indicate that the two SERDES ICs can work properly accompanied with their corresponding clocking strategies.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.172-180
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• 2003

Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/40 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.