• Title/Summary/Keyword: RF Control

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A 41dB Gain Control Range 6th-Order Band-Pass Receiver Front-End Using CMOS Switched FTI

  • Han, Seon-Ho;Nguyen, Hoai-Nam;Kim, Ki-Su;Park, Mi-Jeong;Yeo, Ik-Soo;Kim, Cheon-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.675-681
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    • 2016
  • A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

The Design and Implementation of TDD-OFDMA Feedback Signal Cancellation(FSC) Digital RF Repeater (TDD-OFDMA 방식의 귀환 신호 제거 디지털 RF 중계기 설계 및 구현)

  • Ryoo Gyoo-Tae;Kim Dae-Yen;Park Se-Jun
    • 한국정보통신설비학회:학술대회논문집
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    • 2006.08a
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    • pp.57-61
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    • 2006
  • As high speed internet users are tremendously increasing, three are keenly in need of development of high speed portable internet technology which can provide high quality wireless internet service cheaply even in the mobile. Unlike the FDD-CDMA, TDD-OFDMA has relatively poor wave environment with inducing interference, fading and delay because it agrees to multi-carrier modulation method and time-division radio telecommunication system. To solve this problem, it is necessary to develop repeater operating by digital signal processing method which have more strict wireless channel control and wave signal processing technology over TDD telecommunication equipments. This thesis is dealing with design and implementation of Digital RF Repeater which implemented 'Synchronization Acquisition Unit', 'TDD signal switching Unit', 'Feedback Signal Cancellation Unit'. Over this argument, we will develop digital RF repeater with more cheap, more adaptive in wave environment like oscillation control, adaptive wave monitoring and output increasing and having control function as a result it will be helpful for success in high speed portable internet service business.

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Implementation of Temperature Control System of Boiler using Mobile Phone (모바일 전화기를 이용한 보일러 온도 조절 시스템 구현)

  • Han, Ki-Tae;Chung, Kyung-Yong;Kim, Sung-Ho
    • Proceedings of the Korea Contents Association Conference
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    • 2008.05a
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    • pp.611-613
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    • 2008
  • This paper describes the system that enables users to control the home electronic equipment using mobile phone. The home network industry is setting in network period that grow rapidly and get many interests. And, it is real condition that hailing of existed system is rising too. This paper developed system to make use of mobile phone regarding this and control boiler temperature in home to remote. This paper that serve this used skill of mobile programming, mobile Brew, RF radio communication, etc. for communication with server in an experiment. This paper presented another method that use RF radio communication and mobile device in home automation construction. The result of this paper will be expected to be able to contribute little in development of home network industry.

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Single Antenna Radar Sensor with FMCW Radar Transceiver IC (FMCW 송수신 칩을 이용한 단일 안테나 레이다 센서)

  • Yoo, Kyung Ha;Yoo, Jun Young;Park, Myung Chul;Eo, Yun Seong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.8
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    • pp.632-639
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    • 2018
  • This paper presents a single antenna radar sensor with a Ku-band radar transceiver IC realized by 130 nm CMOS processes. In this radar receiver, sensitivity time control using a DC offset cancellation feedback loop is employed to achieve a constant SNR, irrespective of distance. In addition, the receiver RF block has gain control to adjust high dynamic range. The RF output power is 9 dBm and the full chain gain of the Rx is 82 dB. To reduce the direct-coupled Tx signal to the Rx in a single antenna radar, a stub-tuned hybrid coupler is adopted instead of a bulky circulator. The maximum measured distance between the horn antenna and a metal plate target is 6 m.

Implementation of Radio Frequency Communication System based Serial UART Communication (직렬 UART 통신 기반 rf 통신 시스템 구현)

  • Jin, Hyun-Soo
    • Journal of Digital Convergence
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    • v.12 no.12
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    • pp.257-264
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    • 2014
  • Through MCU model, Radio Frequency communication is completed using universal asynchronous receiver and transmitter. The communicatin with PC and MCU is completed using RS-232 cable. At first interconnected communication with PC and MCU is necessary for RF communication because tha UART is based technique for RF communication. Program imbeded in microcontroller unit is ran during RF signal is transmitted to other RF module. Data connected with PC and MCU is transmitted between PC and MCU during PC and MCU is connected.

Electrical and Optical Properties of ITO Films Sputtered by RF -bias Voltage and In-Sn Alloy Target

  • Kim, Hyun-Hoo;Shin, Sung-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.4
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    • pp.153-157
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    • 2004
  • ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

Hybrid combiner design for downlink massive MIMO systems

  • Seo, Bangwon
    • ETRI Journal
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    • v.42 no.3
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    • pp.333-340
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    • 2020
  • We consider a hybrid combiner design for downlink massive multiple-input multiple-output systems when there is residual inter-user interference and each user is equipped with a limited number of radio frequency (RF) chains (less than the number of receive antennas). We propose a hybrid combiner that minimizes the mean-squared error (MSE) between the information symbols and the ones estimated with a constant amplitude constraint on the RF combiner. In the proposed scheme, an iterative alternating optimization method is utilized. At each iteration, one of the analog RF and digital baseband combining matrices is updated to minimize the MSE by fixing the other matrix without considering the constant amplitude constraint. Then, the other matrix is updated by changing the roles of the two matrices. Each element in the RF combining matrix is obtained from the phase component of the solution matrix of the optimization problem for the RF combining matrix. Simulation results show that the proposed scheme performs better than conventional matrix-decomposition schemes.

Understanding of RF Impedance Matching System Using VI-Probe

  • Lee, Ji Ha;Park, Hyun Keun;Lee, Jungsoo;Hong, Snag Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.3
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    • pp.43-48
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    • 2020
  • The demand for stable plasma has been on the rise because of the increased delivery power amount in the chamber for improving productivity, and fast and accurate plasma impedance matching become a crucial performance measure for radio frequency (RF) power system in semiconductor manufacturing equipment. In this paper, the overall impedance matching was understood, and voltage and current values were extracted with voltage - current (VI) probe to measure plasma impedance in real-time. Actual matching data were analyzed to derive calibration coefficient for V and I measurements to understand the characteristics of VI probe, and we demonstrated the tendency of RF impedance matching according to changes in load impedance. This preliminary empirical research can contribute to fast RF matching as well as advanced equipment control for the next level of detailed investigation on embedded system based-RF matching controller.

A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers

  • Kim, Seong-Do;Choi, Jang-Hong;Lee, Joo-Hyun;Koo, Bon-Tae;Kim, Cheon-Soo;Eum, Nak-Woong;Yu, Hyun-Kyu;Jung, Hee-Bum
    • ETRI Journal
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    • v.33 no.6
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    • pp.969-972
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    • 2011
  • This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-${\mu}m$ CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply.

Review on Performance Requirements, Design and Implementation of RF Transceiver for Mobile Communications

  • Lee, Il-Kyoo;Ryu, Seong-Ryeol;Oh, Seung-Hyeub;Hong, Heon-Jin
    • Information and Communications Magazine
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    • v.24 no.3
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    • pp.76-86
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    • 2007
  • This paper describes the RF performance issues of UE RF Transceiver for W-CDMA system based on 3GPP specifications. the parameters of transmitter and receiver are derived from the viewpoint of RF performance. In order for UE to achieve high performance, the transceiver performance requirements such as ACIR, EVM, Peak Code Domain Error, spectrum emission mask, frequency error stability and TX power control dynamic range for transmitter and reference sensitivity level, blocking characteristics, noise figure, ACS, linearity, AGC dynamic range for receiver are considered. On the basis of the required parameters, the UE RF transceiver is designed and then implemented. The evaluation of RF performance is accomplished through practical test scenarios.