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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers

  • Kim, Seong-Do (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Choi, Jang-Hong (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Lee, Joo-Hyun (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Koo, Bon-Tae (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Cheon-Soo (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Eum, Nak-Woong (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Yu, Hyun-Kyu (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Jung, Hee-Bum (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2011.02.11
  • Accepted : 2011.05.06
  • Published : 2011.12.31
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Abstract

This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-${\mu}m$ CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply.

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References

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