• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.2
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• pp.22-32
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• 2002

MEMS(Micro-Electro-Mechanical Systems)는 전기적인 구성요소와 기계적인 구성요소를 작게 조합하여 구성한 소자나 시스템을 말한다. RF(Radio Frequency) MEMS는 MEMS를 이용한 RF 소자나 시스템을 의미하며, 본 고에서는 RF 소자에 대하여 논의하고자 한다. MEMS는 RF 소자의 성능, 기능, 집적화 등을 높여 주고, 크기, 가격, 부피, 전력 소모 등을 낮추어 주므로 소자 개발에 대한 연구는 매우 다양하지만, 본 고에서는 움직이는 소자 중에서 가장 많이 연구되고 있는 mechanical RF switch에 대하여 중점적으로 다루고자 한다. 이에 대한 연구 동향, 특성, 응용 분야 등을 살펴보고, 상품으로서의 가치를 인정 받기 위하여 고려해야 할 점들을 논의 하겠다.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.2
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• pp.44-52
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• 2002

본 논문에서는 RF와 마이크로파 응용을 위한 MEMS 수동 소자에 대한 내용이다. 이 수동 소자들을 만들기 위해서 개발된 3타원 MEMS공정은 기존의 실리콘 공정과 완전한 호환성을 가지고 한 칩으로 집적화 시킬 수 있는 공정이다. 이 3차원 MEMS 공정은 기존 실리콘 긍정이 가지고 있는 한계를 극복하기 위한 방법으로써 개발되었다. 개발된 공정을 이용하여 실리콘 공정에서 구현할 수 없었던 좋은 성능의 인덕터, 트랜스포머 및 전송선을 RF와 마이크로파 응용을 위해서 구현하였다. 저 전압, 높은 차단율을 위한 push-pull 개념을 도입한 MEMS 스위치를 구현하였다. 또한 높은 Q를 갖는 MEMS 인덕터를 최초로 CMOS 칩과 집적화에 성공하여 600kHz 옵셋 주파수에서 -122 dBc/Hz의 특성을 갖는 2.6 GHz 전압 제어 발진기를 제작하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.188-191
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• 2005

본 논문에서는 RF 플라즈마 발생 장치인 RF-Match의 기구적 최적 설계를 제안하였다. RF-Match의 정합소자 구동 기어단의 효율 개선을 위해 베벨기어를 웜기어로 대체 설계하여 백래쉬를 제거하였으며, 정합소자의 고전력 인가로 인한 아크 발생 문제의 해결을 위해 접지를 개선하여 RF-Match의 기구적 성능을 향상 시켰다.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.172-180
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• 2003

Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/40 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.11
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• pp.2090-2094
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• 2007

Film bulk acoustic wave resonator(FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.744-751
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• 2004

This paper presents the implementation of the low cost and high speed RF ATE(Automatic Test Equipment) system, which can be a reasonable solution for reducing the test cost of RF devices. This paper suggests high speed and precise measurement capabilities which are realized by the 16 independent RF ports with high speed switching time and high accuracy digitizer using the industry standard Versus module eXtensions for Instrument(VXI) General Purpose Interface Bus(GPIB) interfaces. Also, the system has the capabilities of quad-site test which can dramatically increase the device throughput. This paper concludes with the demonstration of the implemented ATE system through the setup of RF Power Amplifier Module(PAM), which is under the most competitive market situation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.36-46
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• 2010

In multi-GHz RF ICs and high-speed digital interfaces, ESD protection devices introduce considerable parasitic capacitance and resistance to inputs and outputs, thereby degrading the RF performance, such as input/output matching, gain, and noise figure. In this paper, the impact of ESD protection devices on the performance of RF ICs is investigated and design methodologies to minimize this impact are discussed. With RF and ESD test results, the 'RF/ESD co-design' method is discussed and compared to the conventional RF ESD protection method which focuses on minimizing the device size.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.49-53
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• 2022

In this study, quantum dot light-emitting diodes (QLEDs) of the optimized EL performance with a radio frequency (RF) sputtered Zn_0.85Mg_0.15O thin film as an electron transport layer (ETL). In typical QLEDs, ZnO nanoparticles (NPs) are widely used materials for ETL layer due to their advantages of high electron mobility, suitable energy level and easy capable of solution processing. However, the instability problem of solution-type ZnO NPs has not yet been resolved. To solve this problem, ZnMgO thin film doped with 15% Mg of ZnO was fabricated by RF sputtering and optimized for the device applied as an ETL. The QLEDs of optimized ZnMgO thin film exhibited a maximum luminance of 15,972 cd/m² and a current efficiency of 7.9 cd/A. Efficient QLEDs using sputtering ZnMgO thin film show the promising results for the future display technology.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.621-625
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• 2001

In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO$_2$/W slatted multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.