Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Efficient Quantum Dot Light-emitting Diodes with Zn0.85Mg0.15O Thin Film Deposited by RF Sputtering Method

RF Sputtering 방법으로 증착된 Zn0.85Mg0.15O 박막을 적용한 고효율 양자점 전계 발광 소자 연구

  • Kim, Bomi (Department of Advanced Materials Engineering, Kyonggi University) ;
  • Kim, Jiwan (Department of Advanced Materials Engineering, Kyonggi University)
  • 김보미 (경기대학교 신소재공학과) ;
  • 김지완 (경기대학교 신소재공학과)
  • Received : 2022.12.12
  • Accepted : 2022.12.19
  • Published : 2022.12.30
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Abstract

In this study, quantum dot light-emitting diodes (QLEDs) of the optimized EL performance with a radio frequency (RF) sputtered Zn0.85Mg0.15O thin film as an electron transport layer (ETL). In typical QLEDs, ZnO nanoparticles (NPs) are widely used materials for ETL layer due to their advantages of high electron mobility, suitable energy level and easy capable of solution processing. However, the instability problem of solution-type ZnO NPs has not yet been resolved. To solve this problem, ZnMgO thin film doped with 15% Mg of ZnO was fabricated by RF sputtering and optimized for the device applied as an ETL. The QLEDs of optimized ZnMgO thin film exhibited a maximum luminance of 15,972 cd/m2 and a current efficiency of 7.9 cd/A. Efficient QLEDs using sputtering ZnMgO thin film show the promising results for the future display technology.

본 연구는 최적화된 전기발광 성능을 가진 양자점 전계 발광 다이오드 소자를 제작하기 위해 RF sputtering 기법으로 Zn0.85Mg0.15O 박막을 전자수송층으로 적용하였다. 일반적으로 양자점 전계 발광 다이오드에서 ZnO 나노입자는 적절한 에너지 준위를 가지고 있어 전자 이동도가 빠르고 용액 처리가 용이하다는 장점으로 전자 수송층으로 널리 사용되는 재료이다. 그러나, 용액형 ZnO 나노입자의 불안정성 문제는 아직 해결되지 않고 있다. 이를 해결하기 위해 본 연구에서는 ZnO에 15 % Mg을 도핑한 ZnMgO 박막을 RF sputtering법으로 제작하고 전자수송층으로 적용한 소자를 최적화하였다. 최적화된 ZnMgO 박막을 이용한 소자는 최대 휘도 15,972 cd/m2, 전류효율 7.9 cd/A를 보였다. Sputtering ZnMgO 박막 기반 양자점 전계 발광 다이오드 소자는 용액형 ZnO 나노입자의 문제를 해결하고 미래 디스플레이 소자 제작 기술의 적용 가능성을 확인하였다.

Keywords

Acknowledgement

This work was supported by Korea Institute for Advancement of Technology grant funded by the Korea Government (MOTIE) (P0017012, Human Resource Development Program for Industrial Innovation) and the National Research Foundation of Korea (NRF) grant funded by the Korea government 2021R1F1A1061248).

References

  1. X. Y. Yang, D. W. Zhao, K. S. Leck, S. T. Tan, Y. X. Tang, J. L. Zhao, H. V. Demir and X. W. Sun, "Full visible Range Covering InP/ZnS Nanocrystals with High Photometric Performance and Their Application to White Quantum Dot Light-Emitting Diodes", Adv. Mater., 24(30), 4180-4185 (2012). https://doi.org/10.1002/adma.201104990
  2. L. Qian, Y. Zheng, J. Xue and P.H. Holloway, "Stable and efficient quantum-dot light-emitting diodes based on solution-proccessed multilayer structures", Nature Photonics., 5, 543-548 (2011). https://doi.org/10.1038/nphoton.2011.171
  3. H. Zhang, S. Chen and X. W. Sun, "Efficient Red/Green/Blue Tandem Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency Exceeding 21%", ACS Nano., 12(1), 697-704 (2018). https://doi.org/10.1021/acsnano.7b07867
  4. H. Moon, C. Lee, W. Lee, J. Kim and H. Chae, "Stability of Quantum Dots, Quantum Dot Films, and Quantum Dot Light-Emitting Diodes for Display Applications", Adv. Mater., 31(34), 1804294 (2019). https://doi.org/10.1002/adma.201804294
  5. J. Song, O. Wang, H. Shen, Q. Lin, Z. Li, L. Wang, X. Zhang and L. S. Li, "Over 30% External Quantum Efficiency Light-Emitting Diodes by Engineering Quantum Dot-Assisted Energy Level Match for Hole Transport Layer", Adv. Funct. Mater., 29(33), 1808377 (2019). https://doi.org/10.1002/adfm.201808377
  6. X. LI, Q. lin, J. song, H. Shen, H, Zhang, L. Li, X. Li and Z. Du, "Quantum-Dot Light-Emitting Diodes for Outdoor Displays with High Stability at High Brightness", Adv. Optica Mater., 8(2), 1901145 (2020). https://doi.org/10.1002/adom.201901145
  7. Y. H. Won, O. Cho, T. Y. Kim, D. T. Chung, T. H. Kim, H. J. Chung, H. S. Jang, J. H. Lee, D. H. Kim and E. J. Jang, "Highly efficient and Stable InP/ZnSe/ZnS quantum dot light-emitting diodes", Nature, 575, 634-638 (2019).
  8. S. Tamang, C. Lincheneau, Y. Hermans, S. Jeong and P. Reiss, "Chemistry of InP Nanocrystal Syntheses", Chem. Mater., 28(8), 2491-2506 (2016). https://doi.org/10.1021/acs.chemmater.5b05044
  9. J. Pan, J. Chen, Q. Huang, Q. Khan, X. Liu, Zhi. Tao, Z. Zhang, W. Lei and A. Nathan, "Size Tunable ZnO Nanoparticles to Enhance Electron Injection in Solution Processed QLEDs", ACS Photonics., 3(2), 215-222 (2016). https://doi.org/10.1021/acsphotonics.5b00267
  10. S. Wang, Y. Guo, D. Feng, L. Chen, Y. Fang, H. Shen and Z. DU, "Bandgap tunable Zn1-xMgxO thin films as electron transport layers for high performance quantum dot light-emitting diodes", J. Mater, Chem. C., 5(19), 4724-4730 (2017). https://doi.org/10.1039/C7TC00453B
  11. L. Wang, J. Pan, J. Qian, W. Lei, Y. Wu, W. Zhang, D. K. Goto and J. Chen. "A highly efficient white quantum dot light-emitting diode employing magnesium doped zinc oxide as the electron transport layer based on bilayered quantum dot layers", J. Mater. Chem. C., 6(30), 8099-8104 (2018). https://doi.org/10.1039/C8TC03014F
  12. T. Miyata, T. Honma and T. Minami, "Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation", J. Vac. Sci. Technol. A., 25, 1193 (2007). https://doi.org/10.1116/1.2484424
  13. Y. Sun, W. jiang, H. Peng, J. Wei, S. Zhang and S. Chen, "Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer", Nanoscale, 9(26), 8962-8969 (2017). https://doi.org/10.1039/c7nr02099f
  14. C. J. Ku, W. C. Hong, T. Mohsin, R. Li, Z. Duan and Y. Lu. "Improvement of Negative Bias Stress Stability in Mg0.03Zn0.97O Thin film Transistors", IEEE Electron Device Lett., 36(9), 914-916 (2015). https://doi.org/10.1109/LED.2015.2459600
  15. X. Qiu, L. Li, J. Zheng, J. Liu, X. Sun and G. Li, "Origin of the Enhanced Photocatalytic Activities of Semiconductors: A Case Study of ZnO Doped with Mg2+", J. Phys. Chem. C., 112(32), 12242-12248 (2008). https://doi.org/10.1021/jp803129e
  16. J. H. Kim, C.Y. Han, K. H. Lee, K. S. An, W. S. Song, J. W. Kim, M. S. Oh, Y. Rag. Do and H. S. Yang, "Performance Improvement of Quantum Dot-Light-Emitting Diodes Enabled by an Alloyed ZnMgO Nanoparticle Electron Transport Layer", Chem. Mater., 27(1), 197-204 (2015). https://doi.org/10.1021/cm503756q
  17. S. Chen and H. S. Kwok, Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates, opt. Express, 18(1), 37-42 (2010). https://doi.org/10.1364/OE.18.000037
  18. K. H. Ko, "Growth and Characterization of Zn1-xMgxO/Al2O3 films by RF magnetron sputtering(in Korean)", in MS Thesis, pp. 22-26, Chonnam National University, Daejeon (2005).