• 한국정보과학회논문지:시스템및이론
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• 제37권4호
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• pp.215-225
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• 2010

낸드 플래시 메모리를 이용한 SSD(Solid State Disk)는 하드 디스크를 대체할 매체로 주목받고 있다. SSD는 성능을 최대화 하기 위해 다수의 낸드 플래시 메모리를 병렬적으로 구성한다. 하지만 SSD에 하이브리드 매핑 기법을 적용할 경우 SSD의 특징으로 인해 성능 감소가 발생 가능하다. 본 논문에서는 SSD를 위한 페이지 매핑 기반의 WADPM (Workload-Aware Dynamic Page-level Mapping Scheme) 기법을 제안한다. WADPM은 필요한 매핑 정보만 RAM에 상주하며 또한 매핑 정보의 적중률에 따라 매핑 정보의 크기를 동적으로 변경시킨다. 이로 인해 페이지 매핑 기법의 단점인 매핑 테이블의 크기가 큰 것을 예방한다. 실험을 통해 WADPM 기법은 하이브리드 매핑 기법에 비해 최대 3.5배의 성능향상을 보이며, 매핑 테이블의 크기는 페이지 매핑 기법에 비해 최대 50%만 유지되는 것을 보인다.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국환경복원기술학회지
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• 제21권1호
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• pp.119-132
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• 2018

This study was conducted to suggest an assessment indices to evaluate the ecosystem services of the unique functions of wetlands as well as economic value provided by the village wetlands. The assessment indicators applied in this study were used by the RAM indices. The results of RAM assessment on the village wetlands in Cheonan city were analyzed by item and critical functions of the village wetland. They were derived by assessment indicators of ecosystem services, and the village wetland ecosystem were presented by Focus Group Interview (FGI). The 20 critical indices were selected from 52 different indices by analyzing the wetland function assessment items. 13 indicators excluding duplicate indexes by function, were selected as ecological service impact indicators. Finally, ecosystem services were evaluated by using AHP analysis to calculate the weight of each assessment indices and apply it to the 9 village wetlands. The results of this study confirmed that the functions of the village wetlands are compliant with the ecosystem services. Based on this assessment of the unique functions of wetlands, it will serve as a methodology for assessing ecosystem services. The study was also conducted on 49 wetlands in Cheonan. The detailed assessment of wetland ecosystem services based on the wetland ecosystem function proposed by this study, was further developed as a follow-up study. It suggested that the wetland areas should be compared and be used as a general standard. In addition to the assessment of the economic value of ecosystem services provided by the village wetlands, it would be useful to assess the unique features and convert them into value.

• 정보과학회 논문지
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• 제42권2호
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• pp.183-189
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• 2015

최근 DRAM 기반의 메인 메모리 기술 발전이 한계에 봉착함에 따라 컴퓨터 시스템의 진보에도 어려움이 발생하고 있다. 이를 개선하기 위해 집적도가 높고 비휘발성을 갖는 차세대 메모리 기술이 등장하고 있으나 이들은 쓰기 속도가 느리거나 쓰기 횟수에 제한이 있는 등, 메인 메모리로 사용하기에는 아직 무리가 있다. 본 논문에서는 여러 차세대 메모리 기술들의 장점들을 조합하여 활용하는 하이브리드 메인 메모리 시스템, 즉 HyMN을 제안한다. HyMN은 차세대 메모리 기술을 쓰기적합램과 읽기적합램으로 분류하여 메인 메모리 시스템을 구성함으로써, 내구성이 양호하고, 고용량화가 용이하며, 비휘발성을 활용할 수 있는 시스템을 구현한다. 본 논문에서는 또한, 쓰기적합램이 어느 정도의 크기로 구성되어야 하는지를 보이고 정전 시 손실에 대한 복구비용이 없거나 미미한 HyMN이 일상적으로 프로세스를 실행할 때 실행 시간 성능이 DRAM으로만 구성된 시스템에 비하여 유사함을 검증한다.

• 전자공학회논문지CI
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• 제47권5호
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• pp.35-40
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• 2010

NAND 플래시 메모리는 기존의 HDD 보다 빠른 접근 속도, 저전력 소비, 진동에 대한 내성 등의 이점을 바탕으로 PDA를 비롯한 여러 모바일 장치부터, 임베디드 시스템, PC에 이르기까지 사용 영역이 넓어지고 있다. DiskSim을 비롯한 HDD 시뮬레이터들이 다양하게 개발되어 왔으며, 이를 바탕으로 소프트웨어 또는 하드웨어에 대한 개선점을 찾아냄으로써 유용하게 사용되었다. 하지만 NAND 플래시 메모리나, SSD에 대해서는 리눅스 기반의 몇 개의 시뮬레이터만이 개발되었으며, 실제 스토리지 장치나 PC등이 사용되는 운영체제가 윈도우즈인 것을 고려하면 윈도우즈 기반의 NAND Flash 시뮬레이터가 꼭 필요하다고 볼 수 있다. 본 논문에서 개발한 NAND Flash FTL 성능 분석을 위한 시뮬레이터인 NFSim은 윈도우즈 운영체제에서 구동되는 시뮬레이터로, NAND 플래시 메모리 모델 및 FTL 알고리즘들은 각각 윈도우즈 드라이버 모델 및 클래스로 제작되어 확장성이 용이하고, 각 알고리즘의 성능을 측정한 데이터는 그래프를 통해 표시되므로, 별도의 툴을 사용할 필요가 없다.

• 한국재료학회지
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• 제32권9호
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• International Journal of Aeronautical and Space Sciences
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• 제17권3호
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• pp.358-365
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• 2016

In this study, one-dimensional analysis under the assumption of an inviscid flow was conducted for the experiment initiated by the French-German Research Institute of Saint-Louis (ISL) in order to investigate the energy effect of aluminum combustion. Previous theoretical analysis based on the assumptions of isentropic compression and a constant specific heat derived by ISL claimed that the experiment was not affected by the heat of aluminum combustion. However, rigorous analysis in present investigation that considered the average properties behind the shock wave compression and temperature-dependent specific heat showed that the S225 experiment was partially affected by the aluminum combustion. The increase in heat due to aluminum combustion was estimated from the rigorous analysis.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1590-1594
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• 2007

This paper describes a case study on dynamic characteristics analysis of a 5-axis multi-tasking machine tool of ram-head typed. Natural frequency and corresponding vibration modes of the machine tool structure were obtained by using both FEM modal analysis and an experimental modal test(impulse hammer test). Both the theoretical and experiment analysis results showed good agreement with each other. Finally, some discussion and review, from the view point of resonance vibration and/or mode coupled chatter, were made based on the analysis results.

• 전자공학회논문지A
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• 제30A권1호
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• pp.64-72
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• 1993

본 논문에서는 RAM에서의 functional 고장인 PSF를 검출할수 있는 "알고리듬 마"를 제안한다. 이 알고리듬은 PSF의 형태를 한정시켜서 제한된 범위의 PSF(restricted PSF or neighborhood PSF)를 검출하는 것으로써 "알고리듬 마"는 SNPSF, PNPSF 및 일부의 ANPSF를 검출하며, 고전적인 고장인 stuck-at 고장 및 천이(transition)고장도 검출한다. 이 알고리듬의 시간 복잡도는 1536xP로써 P는 메모리블럭의 분할갯수를 나타낸다. 또한 "알고리듬 마"의 BIST scheme을 제안하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.