• 제목/요약/키워드: R2R process

검색결과 3,581건 처리시간 0.023초

Spin-transfer Torque Switching in nano-sized MTJ

  • Oh, S.C.;Lee, J.E.;Nam, K.T.;Jeong, J.H.;Yeo, I.S.;Kim, S.T.;Han, W.S.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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    • pp.61.2-61.2
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    • 2007
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연구개발 결과물의 품질 향상을 위한 연구개발 표준 프로세스 정의 및 프로젝트 프로세스 조정 (Defining and Tailoring R&D Standard Process to Improve the Quality of R&D Outcomes)

  • 류원옥;정효택
    • 대한산업공학회지
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    • 제43권2호
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    • pp.112-119
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    • 2017
  • Korea's national R&D projects are increasing year by year. However, it is necessary to improve the quality of R&D result. In this paper, we introduce the developing and adjusting the R&D standard process based on process approach in ETRI. It is expected that the definition of R&D standard process will contribute to improve customer satisfaction and quality of R&D result through standardization and continuous improvement activities.

게이지 R&R과 성능지수를 이용한 측정시스템과 공정능력 평가 방법 (Evaluation Method for Measurement System and Process Capability Using Gage R&R and Performance Indices)

  • 주영돈;이동주
    • 산업경영시스템학회지
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    • 제42권2호
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    • pp.78-85
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    • 2019
  • High variance observed in the measurement system can cause high process variation that can affect process capability badly. Therefore, measurement system analysis is closely related to process capability analysis. Generally, the evaluation for measurement system and process variance is performed separately in the industry. That is, the measurement system analysis is implemented before process monitoring, process capability and process performance analysis even though these analyses are closely related. This paper presents the effective concurrent evaluation procedure for measurement system analysis and process capability analysis using the table that contains Process Performance (Pp), Gage Repeatability & Reproducibility (%R&R) and Number of Distinct Categories (NDC). Furthermore, the long-term process capability index (Pp), which takes into account both gage variance and process variance, is used instead of the short-term process capability (Cp) considering only process variance. The long-term capability index can reflect well the relationship between the measurement system and process capability. The quality measurement and improvement guidelines by region scale are also described in detail. In conclusion, this research proposes the procedure that can execute the measurement system analysis and process capability analysis at the same time. The proposed procedure can contribute to reduction of the measurement staff's effort and to improvement of accurate evaluation.

A Synthetic Chart to Monitor The Defect Rate for High-Yield Processes

  • Kusukawa, Etsuko;Ohta, Hiroshi
    • Industrial Engineering and Management Systems
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    • 제4권2호
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    • pp.158-164
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    • 2005
  • Kusukawa and Ohta presented the $CS_{CQ-r}$ chart to monitor the process defect $rate{\lambda}$ in high-yield processes that is derived from the count of defects. The $CS_{CQ-r}$ chart is more sensitive to $monitor{\lambda}$ than the CQ (Cumulative Quantity) chart proposed by Chan et al.. As a more superior chart in high-yield processes, we propose a Synthetic chart that is the integration of the CQ_-r chart and the $CS_{CQ-r}$chart. The quality characteristic of both charts is the number of units y required to observe r $({\geq}2)$ defects. It is assumed that this quantity is an Erlang random variable from the property that the quality characteristic of the CQ chart follows the exponential distribution. In use of the proposed Synthetic chart, the process is initially judged as either in-control or out-of-control by using the $CS_{CQ-r}$chart. If the process was not judged as in-control by the $CS_{CQ-r}$chart, the process is successively judged by using the $CQ_{-r}$chart to confirm the judgment of the $CS_{CQ-r}$chart. Through comparisons of ARL (Average Run Length), the proposed Synthetic chart is more superior to monitor the process defect rate in high-yield processes to the stand-alone $CS_{CQ-r}$ chart.

롤투롤 슬롯-다이 대면적 코팅 공정 최적화를 위한 통계적 모델링 방법 (A Statistical Analysis for Slot-die Coating Process in Roll-to-roll Printed Electronics)

  • 박장훈;이창우
    • 한국기계가공학회지
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    • 제12권5호
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    • pp.23-29
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    • 2013
  • Recent advances in printing technology have increased the productivity of the roll-to-roll (R2R) printing process for printed circuitry. In the R2R printed electronics, characteristics of printed and coated layers are one of the most important issues that determine the functional quality of final products. The slot-die technology can coat a large area with high uniformity using low-viscosity materials; determining the process parameters is important to obtain excellent coating qualities. In this study, a viscocapillary model was used to predict qualities of coated layers and patterns. On the basis of analysis results, a novel meta model was derived using design of experiment methodology to improve accuracy. Sensitivity analysis was performed to define major parameters in R2R slot-die coating process. The coating speed was found to most significantly affect the coated layer thickness and was easily controlled. The performance of the proposed model is verified through experimental studies. Based on the statistical analysis results, R2R slot die process can be optimized to guarantee a desired thickness.

Analysis of Process Parameters to Improve On-Chip Linewidth Variation

  • Jang, Yun-Kyeong;Lee, Doo-Youl;Lee, Sung-Woo;Lee, Eun-Mi;Choi, Soo-Han;Kang, Yool;Yeo, Gi-Sung;Woo, Sang-Gyun;Cho, Han-Ku;Park, Jong-Rak
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권2호
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    • pp.100-105
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    • 2004
  • The influencing factors on the OPC (optical proximity correction) results are quantitatively analyzed using OPCed L/S patterns. ${\sigma}$ values of proximity variations are measured to be 9.3 nm and 15.2 nm for PR-A and PR-B, respectively. The effect of post exposure bake condition is assessed. 16.2 nm and 13.8 nm of variations are observed. Proximity variations of 11.6 nm and 15.2 nm are measured by changing the illumination condition. In order not to seriously deteriorate the OPC, these factors should be fixed after the OPC rules are extracted. Proximity variations of 11.4, 13.9, and 15.2 nm are observed for the mask mean-to-targets of 0, 2 and 4 nm, respectively. The decrease the OPC grid size from 1 nm to 0.5 nm enhances the correction resolution and the OCV is reduced from 14.6 nm to 11.4 nm. The enhancement amount of proximity variations are 9.2 nm corresponding to 39% improvement. The critical dimension (CD) uniformity improvement for adopting the small grid size is confirmed by measuring the CD uniformity on real SRAM pattern. CD uniformities are measured 9.9 nm and 8.7 nm for grid size of 1 nm and 0.5 nm, respectively. 22% improvement of the CD uniformity is achieved. The decrease of OPC grid size is shown to improve not only the proximity correction, but also the uniformity.

신제품, 신서비스, 신기술 개발을 위한 맞춤화된 R&D 프로세스 평가 방법론 (A customized framework for assessing R&D process: Product, service and technology)

  • 조영란;이성주;윤재욱
    • 기술혁신연구
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    • 제20권2호
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    • pp.109-134
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    • 2012
  • 최근 시장의 글로벌화가 가속되고, 기업경쟁이 심화되는 환경에서 R&D는 기업의 지속적인 성장과 발전에 중요한 경영요소로 대두되고 있다. 이에 성공적인 R&D 활동을 위한 프로세스 및 세부활동들을 제안하고 검증하는 연구들이 활발하게 진행되고 있고 있으며 기업의 R&D 프로세스를 평가하고 개선하고자 하는 노력 또한 지속되고 있다. 그럼에도 불구하고 대부분의 기존 연구에서는 R&D 프로세스의 평가에 대한 구체적인 평가체계가 부재한 실정이다. 이에 본 연구는 프로세스의 성숙도 평가 모델로 개발된 CMMI 평가체계를 기반으로 R&D 프로세스에 적합한 평가체계를 개발하고자 한다. 특히 본 연구에서는 R&D 프로세스를 3가지 유형-신제품, 서비스, 원천기술 개발을 위한 R&D-로 구분하여 유형별 맞춤화된 프로세스 평가체계를 제안한다. 이를 위해 첫째, 유형 별 R&D 활동의 특징을 분석하고 이를 토대로 R&D 프로세스를 정의하고, 문헌 연구를 통해 각 유형에 적합한 R&D 프로세스별 세부활동을 도출한다. 그 후 CMMI 평가기법을 기반으로 한 R&D 프로세스 평가방법을 제안하며, 마지막으로 제안된 평가체계가 적용된 시스템을 구현하는 순서로 진행된다. 본 연구결과는 기업의 R&D 프로세스를 평가하고 개선하기 위한 구체적인 지침으로 유용하게 활용될 것으로 기대된다.

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연구품질 향상을 위한 프로세스 관점의 R&D 품질 진단 프레임워크 개발 (R&D Quality Diagnosis Framework Focusing on R&D Process)

  • 이민기;이해준;이종석;신완선;한근희;김덕환
    • 대한산업공학회지
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    • 제43권2호
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    • pp.100-111
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    • 2017
  • Evaluating the performance of R&D Activity is complicated because it is hard to quantify the R&D results unlike the traditional manufacturing or service industries. Recently, to overcome this, process-focused evaluation methods applying the philosophy of quality into R&D environment have been introduced. However, these quality activities are mainly conducted without feedback system after the evaluation work is done. The aim of this study is to present a R&D quality diagnosis framework to obtain the improvement opportunities from R&D process perspective. The research is designed as follows : First, R&D standard process and R&D quality elements are derived from a literature review. Second, the diagnosis objects are obtained by investigating the R&D quality elements at each R&D steps. Third, a two-dimensional diagnosis model, which enables the objective measurement of the 'system compatibility' and 'accomplish level', is presented. The proposed method can provide an effective way to find opportunities for efficient quality improvement of R&D process.

2R++: Warm Page 식별을 통한 2R FTL 개선 (2R++: Enhancing 2R FTL to Identify Warm Pages)

  • 안효준;이상원
    • 정보처리학회논문지:컴퓨터 및 통신 시스템
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    • 제11권12호
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    • pp.419-428
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    • 2022
  • 플래시 메모리는 in-place 수정이 불가능한 특성을 가지기 때문에 out-of-place 방식으로 쓰기 작업을 수행한다. 덮어쓰기가 발생한 오래된 페이지는 유효하지 않은 페이지로 전환된다. 유효하지 않은 페이지들은 높은 오버헤드를 가진 가비지 컬렉션 과정을 유발한다. 가비지 컬렉션은 많은 읽기, 쓰기 작업을 유발하기 때문에 플래시 메모리의 주요 성능 이슈 중 하나이다. 2R에서는 OLTP(On-Line Transaction Process) 워크로드의 I/O 특성을 가비지 컬렉션 알고리즘에 적용하여 WAF(Write Amplification Factor)를 개선하였다. 본 논문에서는 접근 간격이 긴 페이지들을 추가로 분리하는 2R++를 통해 2R에서 발생하는 지역 오염 문제를 해결했다. 2R++는 블록 당 추가 bit를 도입해 second chance mechanism 기반으로 warm 페이지를 분리해서 warm 페이지가 cold 페이지로 오인 식별되는 것을 방지한다. TPC-C와 Linkbench에 대해 알고리즘 별 성능 비교 실험을 진행하였고, 그 결과 2R++의 WAF는 2R대비 각각 57.8%, 13.8%의 개선을 이루어냈음을 확인했다.

A central limit theorem for sojourn time of strongly dependent 2-dimensional gaussian process

  • Jeon, Tae-Il
    • 대한수학회지
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    • 제32권4호
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    • pp.725-737
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    • 1995
  • Let $X_t = (X_t^(1), X_t^(2))', t \geqslant 0$, be a real stationary 2-dimensional Gaussian process with $EX_t^(1) = EX_t^(2) = 0$ and $$ EX_0 X'_t = (_{\rho(t) r(t)}^{r(t) \rho(t)}), $$ where $r(t) \sim $\mid$t$\mid$^-\alpha, 0 < \alpha < 1/2, \rho(t) = o(r(t)) as t \to \infty, r(0) = 1, and \rho(0) = \rho (0 \leqslant \rho < 1)$. For $t > 0, u > 0, and \upsilon > 0, let L_t (u, \upsilon)$ be the time spent by $X_s, 0 \leqslant s \leqslant t$, above the level $(u, \upsilon)$.

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