• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.61.2-61.2
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• 2007

• Journal of Korean Institute of Industrial Engineers
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• v.43 no.2
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• pp.112-119
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• 2017

Korea's national R&D projects are increasing year by year. However, it is necessary to improve the quality of R&D result. In this paper, we introduce the developing and adjusting the R&D standard process based on process approach in ETRI. It is expected that the definition of R&D standard process will contribute to improve customer satisfaction and quality of R&D result through standardization and continuous improvement activities.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.42 no.2
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• pp.78-85
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• 2019

High variance observed in the measurement system can cause high process variation that can affect process capability badly. Therefore, measurement system analysis is closely related to process capability analysis. Generally, the evaluation for measurement system and process variance is performed separately in the industry. That is, the measurement system analysis is implemented before process monitoring, process capability and process performance analysis even though these analyses are closely related. This paper presents the effective concurrent evaluation procedure for measurement system analysis and process capability analysis using the table that contains Process Performance (Pp), Gage Repeatability & Reproducibility (%R&R) and Number of Distinct Categories (NDC). Furthermore, the long-term process capability index (Pp), which takes into account both gage variance and process variance, is used instead of the short-term process capability (Cp) considering only process variance. The long-term capability index can reflect well the relationship between the measurement system and process capability. The quality measurement and improvement guidelines by region scale are also described in detail. In conclusion, this research proposes the procedure that can execute the measurement system analysis and process capability analysis at the same time. The proposed procedure can contribute to reduction of the measurement staff's effort and to improvement of accurate evaluation.

• Industrial Engineering and Management Systems
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• v.4 no.2
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• pp.158-164
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• 2005

Kusukawa and Ohta presented the $CS_{CQ-r}$ chart to monitor the process defect $rate{\lambda}$ in high-yield processes that is derived from the count of defects. The $CS_{CQ-r}$ chart is more sensitive to $monitor{\lambda}$ than the CQ (Cumulative Quantity) chart proposed by Chan et al.. As a more superior chart in high-yield processes, we propose a Synthetic chart that is the integration of the CQ_-r chart and the $CS_{CQ-r}$chart. The quality characteristic of both charts is the number of units y required to observe r $({\geq}2)$ defects. It is assumed that this quantity is an Erlang random variable from the property that the quality characteristic of the CQ chart follows the exponential distribution. In use of the proposed Synthetic chart, the process is initially judged as either in-control or out-of-control by using the $CS_{CQ-r}$chart. If the process was not judged as in-control by the $CS_{CQ-r}$chart, the process is successively judged by using the $CQ_{-r}$chart to confirm the judgment of the $CS_{CQ-r}$chart. Through comparisons of ARL (Average Run Length), the proposed Synthetic chart is more superior to monitor the process defect rate in high-yield processes to the stand-alone $CS_{CQ-r}$ chart.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.5
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• pp.23-29
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• 2013

Recent advances in printing technology have increased the productivity of the roll-to-roll (R2R) printing process for printed circuitry. In the R2R printed electronics, characteristics of printed and coated layers are one of the most important issues that determine the functional quality of final products. The slot-die technology can coat a large area with high uniformity using low-viscosity materials; determining the process parameters is important to obtain excellent coating qualities. In this study, a viscocapillary model was used to predict qualities of coated layers and patterns. On the basis of analysis results, a novel meta model was derived using design of experiment methodology to improve accuracy. Sensitivity analysis was performed to define major parameters in R2R slot-die coating process. The coating speed was found to most significantly affect the coated layer thickness and was easily controlled. The performance of the proposed model is verified through experimental studies. Based on the statistical analysis results, R2R slot die process can be optimized to guarantee a desired thickness.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.100-105
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• 2004

The influencing factors on the OPC (optical proximity correction) results are quantitatively analyzed using OPCed L/S patterns. ${\sigma}$ values of proximity variations are measured to be 9.3 nm and 15.2 nm for PR-A and PR-B, respectively. The effect of post exposure bake condition is assessed. 16.2 nm and 13.8 nm of variations are observed. Proximity variations of 11.6 nm and 15.2 nm are measured by changing the illumination condition. In order not to seriously deteriorate the OPC, these factors should be fixed after the OPC rules are extracted. Proximity variations of 11.4, 13.9, and 15.2 nm are observed for the mask mean-to-targets of 0, 2 and 4 nm, respectively. The decrease the OPC grid size from 1 nm to 0.5 nm enhances the correction resolution and the OCV is reduced from 14.6 nm to 11.4 nm. The enhancement amount of proximity variations are 9.2 nm corresponding to 39% improvement. The critical dimension (CD) uniformity improvement for adopting the small grid size is confirmed by measuring the CD uniformity on real SRAM pattern. CD uniformities are measured 9.9 nm and 8.7 nm for grid size of 1 nm and 0.5 nm, respectively. 22% improvement of the CD uniformity is achieved. The decrease of OPC grid size is shown to improve not only the proximity correction, but also the uniformity.

• Journal of Technology Innovation
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• v.20 no.2
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• pp.109-134
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• 2012

In this era of globalization and fierce competition, R&D is an essential part of corporate development strategy. Accordingly, much effort has been devoted to identify and verify best practices for successful R&D and to improve R&D processes. Nevertheless, there is still lack of a comprehensive framework for assessing the quality of R&D process, which can be used as a step-by-step guide for process improvement. Therefore, this study purposes to develop a framework for assessing R&D process based on the concept of CMMI, which is a process improvement approach that defines the essential elements of effective processes. In particular, we suggest three types of R&D process-new product development, new service creation and new technology creation-and then develop a customized framework for them. For this purpose, we firstly investigated the characteristics of R&D activities for each type of process and identify its base practices from an extensive literature review. Then, the CMMI approach was adopted and modified to suit the R&D process. Finally, an illustrative example was provided to demonstrate the assessment process and a prototype web-based assessment system was suggested. Research findings will help understand the characteristics of different types of R&D process and provide a customized guidelines for R&D process assessment and improvement.

• Journal of Korean Institute of Industrial Engineers
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• v.43 no.2
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• pp.100-111
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• 2017

Evaluating the performance of R&D Activity is complicated because it is hard to quantify the R&D results unlike the traditional manufacturing or service industries. Recently, to overcome this, process-focused evaluation methods applying the philosophy of quality into R&D environment have been introduced. However, these quality activities are mainly conducted without feedback system after the evaluation work is done. The aim of this study is to present a R&D quality diagnosis framework to obtain the improvement opportunities from R&D process perspective. The research is designed as follows : First, R&D standard process and R&D quality elements are derived from a literature review. Second, the diagnosis objects are obtained by investigating the R&D quality elements at each R&D steps. Third, a two-dimensional diagnosis model, which enables the objective measurement of the 'system compatibility' and 'accomplish level', is presented. The proposed method can provide an effective way to find opportunities for efficient quality improvement of R&D process.

• KIPS Transactions on Computer and Communication Systems
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• v.11 no.12
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• pp.419-428
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• 2022

Since in-place updates for pages are not allowed in flash memory, all new page writes should be written in an out-of-place manner. The old overwritten pages are invalidated. Such invalidated pages eventually trigger the costly garbage collection process. Since the garbage collection causes numerous read and write operations, it is one of the flash memory's major performance issues. In 2R, it modified the garbage collection algorithm, which applies the I/O characteristics of the On-Line Transaction Process workload to improve the Write Amplification Factor. However, this algorithm has a region pollution problem. Therefore, in this paper, we developed 2R++ that additionally separates pages with long access intervals to solve the region pollution problem. 2R++ introduces an extra bit per block to separate warm pages based on a second chance mechanism. Prevents warm pages from being misidentified as cold pages to solve region pollution problem. We conducted the experiments on TPC-C and Linkbench to make the performance comparison. The experiment showed that 2R++ achieved a Write Amplification Factor improvement of 57.8% and 13.8% compared to 2R, respectively.

• Journal of the Korean Mathematical Society
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• v.32 no.4
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• pp.725-737
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• 1995

Let $X_t = (X_t^(1), X_t^(2))', t \geqslant 0$, be a real stationary 2-dimensional Gaussian process with $EX_t^(1) = EX_t^(2) = 0$ and $$ EX_0 X'_t = (_{\rho(t) r(t)}^{r(t) \rho(t)}), $$ where $r(t) \sim $\mid$t$\mid$^-\alpha, 0 < \alpha < 1/2, \rho(t) = o(r(t)) as t \to \infty, r(0) = 1, and \rho(0) = \rho (0 \leqslant \rho < 1)$. For $t > 0, u > 0, and \upsilon > 0, let L_t (u, \upsilon)$ be the time spent by $X_s, 0 \leqslant s \leqslant t$, above the level $(u, \upsilon)$.