• Journal of the Korean Society for Heat Treatment
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• v.3 no.1
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• pp.1-7
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• 1990

To investigate the influence of r.f. power and electrode distance on the TiN deposition, TiN films were deposited onto STC3, STD11 steel and Si-wafer from gas mixtures of $TiC_4/N_2/H_2$ using the radio frequency plasma assisted chemical vapor deposition. The crystallinity of TiN film could be improved by the increase of r.f. power and the decrease of electrode distance. The TiN coated layer contains chlorine, its content were decreased with increasing r.f. power as well as decreasing electrode distance. And the thickness of deposited TiN was largely affected by r.f. power and electrode distance. The hardness of deposited TiN reached a maximum value of about Hv 2,000.

• Journal of the Korean Mathematical Society
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• v.56 no.5
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• pp.1403-1418
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• 2019

Let R be a commutative ring with unity. If f(x) is a zero-divisor polynomial such that $f(x)=c_f f_1(x)$ with $c_f{\in}R$ and $f_1(x)$ is not zero-divisor, then $c_f$ is called an annihilating content for f(x). In this case $Ann(f)=Ann(c_f )$. We defined EM-rings to be rings with every zero-divisor polynomial having annihilating content. We showed that the class of EM-rings includes integral domains, principal ideal rings, and PP-rings, while it is included in Armendariz rings, and rings having a.c. condition. Some properties of EM-rings are studied and the zero-divisor graphs ${\Gamma}(R)$ and ${\Gamma}(R[x])$ are related if R was an EM-ring. Some properties of annihilating contents for polynomials are extended to formal power series rings.

• Bulletin of the Korean Mathematical Society
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• v.50 no.2
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• pp.485-498
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• 2013

In this paper, the Schur convexity is generalized to Schur $f$-convexity, which contains the Schur geometrical convexity, harmonic convexity and so on. When $f$ : ${\mathbb{R}}_+{\rightarrow}{\mathbb{R}}$ is defined as $f(x)=(x^m-1)/m$ if $m{\neq}0$ and $f(x)$ = ln $x$ if $m=0$, the necessary and sufficient conditions for $f$-convexity (is called Schur $m$-power convexity) of Gini means are given, which generalize and unify certain known results.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• Journal of the Korean institute of surface engineering
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• v.38 no.4
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• pp.150-155
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• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.56-56
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• 1999

수소화된 비정질 탄소(a-C:H0는 그 형성 조건에 따라서 여러 가지 다른 구조와 특성을 갖게 되며, 특히 DLC(diamond-like carbon)-FED(field emission display) 개발 면에서 중요하게 연구되고 있다. 본 연구에서는 a-C:H 박막을 PECVD(plasma-enhanced chemical vapor deposition) 방법으로 증착하고 주고 ESR 및 Raman 측정을 통하여 그 결과를 조사해 보았다. PECVD 증착가스는 CH4 가스를 사용하였다. 기판은 Corning 1737 glass를 사용하였고, 기판 온도는 32$0^{\circ}C$이었다. 증착 압력과 R>F. power는 각각 0.1-1 Torr 와 12-36 W 사이에서 변화되었다. ESR를 피하기 위하여, microwave power에 대한 ESR 신호 의존성을 측정하고 포화효과를 피하기 위한 Raman spectroscopy로 분석하였다. R.F.power가 증가할수록 증착속도는 0.06 nm/sec 정도까지 대체로 증가하였으나, pressure가 1 Torr 일때는 같은 R.F. power로써 증착이 일어나지 않는 경우도 발생하였다. 증착된 a-C:H 박막은 R.F.power가 증가할수록 스핀밀도의 증가가 두드러졌으며, 기타 증착가스 압력 등의 증착 조건에 따른 ESR 및 Raman 스펙트럼의 변화를 관찰하였다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.175-176
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• 2008

향후 개발되어질 Digital Power IED (Protection & Measuring, Control, Supervision etc.) 에서 제작된 H/W 및 Simulation용 Target Board 의 Firmware Process Flow 지침으로서 개발 경험을 바탕으로 보다 안정적이고 효율적인 Programming 을 가능하게 하고, 실시간 연산 Process 의 기준 확립 및 이해를 통한, 개선 아이디어 도출 및 수정 필요시 빠른 Trouble-Shooting 능력을 배양할 수 있다. 새로운 Process 아이디어의 Simulation 적용 및 확인으로 호환성과 안정성에 기반하는 F/W Optimization을 항상 유지 관리할 수 있으며, Measuring Element (전압, 전류, 전력, 주파수 등), Protection Element (OC, OCG, OV, OVG, UV, UC, DOC 등) 의 기준을 정함으로서 새로운 개발자에게는 개발 실무를 위한 교육 자료로 이용하고, 기존 개발자들에게는 안정된 F/W 모듈을 제공한다. 본 논문에서는 개발 시간을 단축하고, 다양한 진보 Process 접근을 원활히 할 수 있는 F/W 및 S/W 시뮬레이터를 제시한다.

• Korean Journal of Mathematics
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• v.25 no.4
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• pp.483-494
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• 2017

In the current manuscript, we investigate the pointwise convergence of the singular integral operators involving power nonlinearity given in the following form: $$T_{\lambda}(f;x)={\int_a^b}{\sum^n_{m=1}}f^m(t)K_{{\lambda},m}(x,t)dt,\;{\lambda}{\in}{\Lambda},\;x{\in}(a,b)$$, where ${\Lambda}$ is an index set consisting of the non-negative real numbers, and $n{\geq}1$ is a finite natural number, at ${\mu}$-generalized Lebesgue points of integrable function $f{\in}L_1(a,b)$. Here, $f^m$ denotes m-th power of the function f and (a, b) stands for arbitrary bounded interval in ${\mathbb{R}}$ or ${\mathbb{R}}$ itself. We also handled the indicated problem under the assumption $f{\in}L_1({\mathbb{R}})$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.353-359
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• 1999

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.86-88
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• 2003

The efficiency of electric machine is important due to increase of interest about energy saving. Single Phase Line Start Permanent Magnet Synchronous Motor has high efficiency and power factor. LSPMSM offer a high efficiency as compared induction motor which are used in the home appliance. The analysis and design of LSPMSM is difficult because of unbalanced rotating magnetic field, nonlinear characteristics and rotor saliency. To consider these effects, F.E.M(Finite Element Methods) is coupled equivalent circuit methods. In this paper, a methods of analysis and design using F.E.M and equivalent circuit is represented.