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http://dx.doi.org/10.3740/MRSK.2004.14.11.821

Characteristics of TiO2 Thin Films Fabricated by R.E, Magnetron Sputtering  

Chu Y. H. (Research Institute of Advanced Materials Development, Chonbuk National University)
Choi D. K. (School of Advanced Materials Engineering, Chonbuk National University)
Publication Information
Korean Journal of Materials Research / v.14, no.11, 2004 , pp. 821-827 More about this Journal
Abstract
Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity
Keywords
titanium oxide thin films; growth; magnetron reactive sputtering; crystallinity; phase transition; eutectic; bond structure;
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