• Proceedings of the KIEE Conference
• /
• 1990.07a
• /
• pp.215-220
• /
• 1990

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

• Proceedings of the Optical Society of Korea Conference
• /
• 1990.02a
• /
• pp.136-140
• /
• 1990

A hybrid wideband amplifier having bandwidth from 5MHz to 2000MHz with a gain of 10db$\pm$3dB is designed and implemented by using a lossy matched network and GaAs FET. The implemented amplifier circuit operates as a capacitor-resistor(C-R) coupled amplifier circuit in the low frequency range (below 800 MHz) in which {{{{ LEFT $\mid$ S_{21 } RIGHT $\mid$ }} for the GaAs FET is constant. It also operates as a lossless impedance matching circuit in the microwave frequency range in which S21 for the GaAs FET has a slope of approximately -6dB/octave. Using this configuration technique, Two stage GaAs FET amplifier implemented is measured to 10dB gain within a 3dB fluctuation over the frequency band from 5 to 2000MHz.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.30 no.10 s.253
• /
• pp.942-949
• /
• 2006

A lumped model is proposed to predict liquid ejection characteristics of a thermally driven inkjet print head. The model is based on a two-dimensional heat conduction equation, an empirical pressure-temperature equation and a nonlinear hydraulic flow-pressure equation. It has been simulated through the construction of an equivalent R-C circuit, and subsequently analyzed using SIMULINK and a circuit simulation tool, PLECS. Using the model, heating and cooling characteristics of the head are predicted to be in agreement with the IR temperature measurements. The effects of the head geometry on the drop ejection are also analyzed using the nonlinear hydraulic model. The present model can be used as a design tool for a better design of thermal inkjet print heads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.12
• /
• pp.1276-1282
• /
• 2003

The SMT(Surface Mount Type) ferrite bead used to reduce the influx of power bus noise is modeled with parallel capacitor(C), series resistor(R) and series inductor(L). The simple equivalent circuit modeling doesn't agree with the measurement result. In this paper, we proposed the accurate equivalent circuit model of the ferrite bead at wide frequency range(50 MHz∼3 GHz) and analyzed the noise effect to the high speed IC(Integrate Circuit) with ferrite bead or not.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.3C no.3
• /
• pp.73-76
• /
• 2003

In modern EHV (Extra High Voltage) class GCBs (Gas Circuit Breakers), the interruption capability for SLF (Short Line Fault) is one of the most important aspects of performance required for GCBs. Up to now, the SLF interruption capability of EHV class GCBs was partially assisted by the adoption of capacitors able to decrease the dV/dt of the TRV (Transient Recovery Voltage), particularly the TRV on the line side. This paper describes the technique to increase the SLF interruption capability of EHV class GCBs as well as the procedure to develop capacitorless l70kV 50kA GCB.

• Proceedings of the KIEE Conference
• /
• 1995.07a
• /
• pp.180-182
• /
• 1995

The equivalent circuit of SLIM is composed of the circuit parameters. They can be obtained from the electromagnetic theory. The accelerating characteristics of SLIM are the best efficiency when synchronous speed changed continuously. The paper outlines a method of acceleration for an accelerated field system in which it is desired to reduce the overall length to a minimum, assuming a limit on the amount of heat which can be generated in the secondary member. The paper then shows that a primary unit designed to give several discrete field speeds only, as opposed to one with continuous speed variation, is not significantly inferior in performance to the latter but is much easier to manufacture.

• Journal of the Korean Ceramic Society
• /
• v.37 no.10
• /
• pp.1001-1007
• /
• 2000

스크린 프린트법으로 MMIC(Monolithic Microwave Integrated Circuit)용 YIG 후막을 제조하였고, YIG의 조성과 프린트 조건의 변화가 다결정 $Y_{3-x}$C $a_{x}$ F $e_{5-x}$Z $r_{x}$ $O_{12}$ (x=0~0.3) 후막의 미세구조 및 자기적 특성에 미치는 영향을 고찰하였다. $Ca^{2+}$와 Z $r^{4+}$ 의 치환 첨가량이 0.2인 $Y_{2.8}$ C $a_{0.2}$F $e_{4.8}$ Z $r_{0.2}$ $O_{12}$ 조성의 paste로 제조된 YIG 후막의 경우, 포화 자화값이 최대를 나타내었으며, 강자성 공명 흡수선 폭은 최소를 나타내었다. 또한, YIG 후막의 두께 및 소결 유지시간 등의 제조조건을 제어함에 따라 치밀화 및 자기 특성이 향상됨을 확인할 수 있었다.다.다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.4
• /
• pp.484-492
• /
• 2015

This paper proposes a PWM phase-shift circuit to make that the LED lighting system distributes the channel currents evenly for any number of LED strings by generating evenly phase-shifted PWM signals for multiple LED driver ICs. The evenly distributed channel currents reduce the peak current, the decoupling capacitor size, and EMI noise. The PWM phase-shift circuit makes an arbitrary degree of PWM phase-shift by using a resistor and a capacitor. It measures the RC delay once. It reduces the number of external resistors and capacitors by providing zero and 180 degree phase-shift modes requiring no resistor and capacitor. An LED driver IC with the PWM phase-shift circuit was fabricated with a $0.35{\mu}m$ BCDMOS process. The PWM phase-shift circuit receives a PWM signal of 50 Hz~20 kHz at $f_{CLK}=450kHz$ and it generates a $0{\sim}360^{\circ}$ phase-shifted PWM signal with $R=0{\sim}1.1M{\Omega}$ at C=1 nF and $f_{PWM}=1kHz$. The measured phase errors are 1.74~3.94% due to parasitic capacitances.

• Journal of Magnetics
• /
• v.21 no.2
• /
• pp.239-243
• /
• 2016

High temperature superconductor (HTS) magnet systems usually employ metal current leads which bridge between the cryogenic environment and room temperature. Such current leads are the dominant heat load for these magnet systems due to a combination of electrical resistance and heat conduction. HTS flux pumps enable large currents to be injected into a HTS magnet circuit without this heat load. We present results from an axial-type HTS mechanically rotating flux pump which employs a ferromagnetic circuit and a Cu-stabilized coated conductor (CC) HTS stator. We show the device can be described by a simple circuit model which was previously used to describe barrel-type flux pumps, where the model comprises an internal resistance due to dynamic resistance and a DC voltage source. Unlike previously reported devices, we show the internal resistance and DC voltage in the flux pump are not exactly proportional to frequency, and we ascribe this to the presence of eddy currents. We also show that this axial-type flux pump has superior current injection capability over barrel-type flux pumps which do not incorporate a magnetic circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.108-108
• /
• 2007

Inkjet printing is a non-contact and direct writing associated with a computer. In the industrial field, there have been many efforts to utilize the inkjet printing as a new way of manufacturing, especially for electronic devices. The etching resist used in this process is an organic polymer which becomes solidified when exposed to ultraviolet lights and has high viscosity of 300 cPs at ambient temperature. A piezoelectric-driven ink jet printhead is used to dispense $20-40\;{\mu}m$ diameter droplets onto the copper substrate to prevent subsequent etching. In this study, factors affecting the pattern formation such as printing resolution, jetting property, adhesion strength, etching and strip mechanism, UV pinning energy have been investigated. As a result, microscale Etch resist patterning of printed circuit board with tens of ${\mu}m$ high have been fabricated.