• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.62-71
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• 1994

A novel semiconductor device is proposed to be used as a processing element for the implementation of pulse-mode neural networks which consists of alternating n' GaAs quantum wells and undoped AlGaAs barriers sandwitched between n' GaAs cathode and P' GaAs anode and in simple circuit in conjunction with a parallel capacitive and resistive load the trigger circuit generates neuron-like pulse train output mimicking the function of axon hillock of biological neuron. It showed the sigmoidal relationship between the frequency of the pulse-train and the applied input DC voltage. In conjunction with MQWIMD the various neural circuits are proposed especially a neural chip monolithically integrated with photodetectors in order to perfrom the pattern recognition.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.857-862
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• 2009

We model lattice-mismatched group III-V semiconductor $In_{x}Ga_{1-x}$ alloys with the three-parameter anharmonic Kirkwood-Keating potential, which includes realistic distortion effect by introducing anharmonicity. Although the potential parameters were determined based on optical properties of the binary parent alloys InAs and GaAs, simulated dielectric functions, reflectance, and Raman spectra of alloys agree excellently with experimental data for any arbitrary atomic composition. For a wide range of atomic composition, InAs- and GaAs-bond retain their respective properties of binary parent crystals despite lattice and charge mismatch. It implies that use of the anharmonic Kirkwood-Keating potential may provide an optimal model system to investigate diverse and unique optical properties of quantum dot heterostructures by circumventing potential parameter searches for particular local structures.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.891-896
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• 2009

Giusti-Suzor and Fano introduced translations of the scales of Lu-Fano plots by phase renormalization in order to decouple the intra- and inter-channel couplings in multichannel quantum defect theory (MQDT). Their theory was further developed by others to deal with systems involving a larger number of channels. In different directions, MQDT was reformulated into forms with a one-to-one correspondence to those in Fano's configuration mixing theory of resonance for photofragmentation processes involving one closed and many open channels. In this study, the theory was further developed to fully reveal the coupling nature, decoupling of the background and resonance scattering in physical scattering matrices as well as to further extract the dynamic parameters undiscovered by Fano and his colleagues. This theory was applied to the photoabsorption spectrum of $H_2$ observed by Herzberg's group.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.431-434
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• 2005

To investigate the dependences of the absorption spectrum and electronic structure properties on the ZnO nano-particle size, ZnO nanocrystals were synthesized by a sol-gel method. The absorption onset peak exhibits a systematic blue-shift with decreasing particle size due to the quantum confinement effect, as well as, with decreasing $Zn^{2+}$ concentration. The increase of particle size is mainly controlled by coarsening and aggregation step during the nucleation and growth of ZnO nano-particles. The onset absorption spectrum of ZnO colloids changes from 310 to 355 nm as $Zn^{2+}$ concentration increases from 0.01 to 0.1 mole. The average particle size as a function of aging- time can be determined from the absorption spectra. The freshly prepared nanocrystal size was about 2.8nm.

• Bulletin of the Korean Chemical Society
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• v.16 no.5
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• pp.436-438
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• 1995

Based on the collisional time-correlation function approach a general analytical expression has been derived for the double differential cross-section with respect to the scattering angle and the final rotational energy, which can be applied to molecules with non-zero electronic orbital angular momentum after collision with fast hydrogen atoms. By integrating this expression another very simple expression, which gives the final rotational distribution as a function of the rotational quantum number, has also been derived. When this expression is applied to NO(2Π1/2, v'=1) and NO(2Π3/2, v'=1, 2, 3), it can reproduce the experimental rotational distribution after collision with fast H atom very well. The average rotational quantum number and average rotational energy using this expression are also in good agreement with those deduced from the experimental distributions.

• Korean Journal of Optics and Photonics
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• v.2 no.4
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• pp.233-241
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• 1991

Structures, fabrication, and characteristics of top-surface-emitting GaAs four quantum well microlaser are described. The microlasers have good room-temperautre CW characteristivs. The maximum CW laser output is >3mW from a 30 $\mu\textrm{m}$ diameter microlaser and the maximum differential quantum efficiency is >70% from a 10 $\mu\textrm{m}$ diameter microlaser. Active surface emitting laser logic devices are designed and fabricated as a discrete version of a top-surface-emitting laser and heterojunction phototransistor. The active surface emitting laser logic device have high optical gain (>20 overall, >200 differential) and very high on/off ratio. Two-dimensional arrays of top-surface-emitting microlasers and active surface emitting laser logic devices will be critical elements for optical computing, photonic switching and neural network applications.

• Progress in Superconductivity and Cryogenics
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• v.23 no.4
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• pp.6-9
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• 2021

Superconducting coplanar waveguide (SCPW) resonators with high quality (Q) factor are widely used for developing quantum sensors and quantum information processors. Here we conducted numerical simulations of SCPW resonators to investigate the relationship between the Q factor and the coupling capacitance of the resonator. Varying the geometrical shape of both ends and coupling parameters of the SCPW resonator resulted in a change of the coupling capacitances and the Q factor as well. Our calculation results indicate that the performance of the SCPW resonator is highly sensitive to the capacitive coupling and searching for an optimal coupling condition would be crucial for developing high-performance SCPW resonator.

• Nano
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• v.13 no.10
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• pp.1850114.1-1850114.7
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• 2018

Here we report an optimized hot-injection method and a phase transfer strategy for the synthesis of water-soluble $CuInS_2$ QDs with desired properties. The structure and morphology studies demonstrate that the resulting QDs are $CuInS_2$ tetragonal phase with well-defined facets. It is also found that the crystal size gradually increases with the increase of reaction temperature, while the surface of QDs with pre- and post-phase transfer is functionalized with hydrophobic and hydrophilic ligands, respectively. Spectroscopy measurements reveal the size-dependent optical properties of $CuInS_2$ QDs, demonstrating the quantum confinement effect in this system.

• ETRI Journal
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• v.44 no.3
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.352-357
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• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.