• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• 기술혁신연구
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• 제15권1호
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• pp.27-63
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• 2007

Recently, Kim and Mauborgne (2005a) has introduced the concept of blue ocean strategy that provides quantum leap in value innovation, thus creating new market space. This study, based on the blue ocean strategy concept, suggests blue ocean new product development strategy, and attempts to examine how much impact this blue ocean new product development strategy has on new product performance, compared to existing new product development strategy perspectives based on competitive strategy-based new product development strategy and resource-based new product development strategy, in an empirical way. The research results show that the blue ocean new product development strategy has a statistically significant impact on new product performance. In addition, it was revealed that such contingency variables as firm size and environmental dynamism have moderating effect on the relationship between the blue ocean new product development strategy and new product performance. The blue ocean new product development strategy is more effective in the small-sized firms than the large-sized ones, and its effect on new product performance is different according to environmental dynamism.

• Journal of Magnetics
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• 제4권4호
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• pp.111-114
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• 1999

Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth films is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistnace is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.111-111
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• 2003

The peroxo titanic acid solution was successfully prepared using titanium trichloride as a precursor. The basic properties of the TiO2 film prepared by the solution were investigated in view of phase change, bandgap energy, crystalline size etc. The film displayed amorphous TiO$_2$ at room temperature, anatase above 281$^{\circ}C$ and a mixture of anatase and rutile at 99$0^{\circ}C$, The crystalline size increases with annealing temperatures, while the bandgap energies decrease due to the quantum size effect and the formation of rutile phase which has low bandgap energy. As a result of TG-DTA, it was found that annealing treatment at 99$0^{\circ}C$ for 2h formed a mixtures of anatase and rutile through three steps: (1) the removal of physically adsorbed water (2) the decomposition of peroxo group (3) amorphous-anatase or anatase-rutile phase transformation.

• 한국의학물리학회지:의학물리
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• 제23권1호
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• pp.26-32
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• 2012

확대촬영은 일반촬영뿐 아니라 미세골촬영, 유방촬영 및 다른 진단 영역에서 널리 사용되고 있다. 유한한 X선 초점의 크기로 인해 확대촬영은 분해능, 노이즈, 대조도 등 영상 시스템 전체에 영향을 미친다. 본 연구의 목적은 유효검출양자효율(effective detective quantum efficiency, eDQE)을 이용하여 영상시스템에 있어서 확대도와 초점크기의 영향을 알아보고자 함이다. 전체적인 영상 시스템 특성을 반영하는 eDQE는 초점에 의한 흐림 현상, 확대, 산란 그리고 격자 반응 등의 영향을 고려한다. 본 실험에서는 Food and Drug Administration (FDA)에서 고안된 흉부 팬텀을 사용하여 실제 가슴 촬영조건에서 측정된 유효변조전달함수(effective modulation transfer function, eMTF), 유효잡음력스펙트럼(effective noise power spectrum, eNPS), 산란율(scatter fraction, SF) 및 투과율(transmission fraction, TF)을 통해 eDQE 값을 도출하였다. 연구 결과를 통해 살펴보면 소초점을 사용했을 경우, eMTF의 값이 10%일 때의 공간주파수는 확대도가 1.2, 1.4, 1.6, 1.8, 2.0일때 각각 2.76, 2.21, 1.78, 1.49 그리고 1.26 lp/mm이었다. 대초점을 사용했을 경우, MTF의 값이 10%일 때의 공간주파수는 확대도가 1.2, 1.4, 1.6, 1.8, 2.0일 때 각각 2.21, 1.66, 1.25, 0.93 그리고 0.73 lp/mm이었다. 확대도가 증가할수록 eMTF 값이 떨어지고, 소초점을 사용했을 때가 대초점을 사용했을 때보다 eMTF가 전체적으로 높다는 것을 확인할 수 있었다. 초점의 크기에 따른 zero frequency에서의 eDQE 값의 변화는 크게 보이지 않았다. 그러나 대초점을 사용했을 경우, 소초점을 사용했을 때보다 저 주파수에서 고 주파수로 갈수록 eDQE가 급격하게 감소하는 것을 확인할 수 있었다. 일반적으로 확대촬영은 작은 병변을 확대시키고 낮은 유효잡음과 air-gap에 의한 산란선의 감소로 인해 대조도를 증가시킨다. 이로 인해 크기가 작은 병변을 고대조도로 확대시킴으로써 진단율을 높일 수 있다. 그러나 초점 크기로 인한 흐림 현상이 확대도에 따라 공간 분해능에 더 큰 영향을 미친다. 이러한 결과를 바탕으로, 디지털 일반촬영 시스템에서의 확대촬영을 시행하기 위한 적절한 초점크기와 확대도가 확립되어야 한다.

• 한국진공학회지
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• 제18권3호
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• pp.208-212
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• 2009

MBE법으로 성장된 InAs/AlAs 양자점(quantum dots; QD) 구조의 광학적 특성을 photoreflectance(PR) 이용하여 조사하였다. Wetting layer(WL) 두께에 따른 전체 장벽의 폭이 달라짐에 따라 GaAs 완충층 및 WL 신호의 세기가 변화되었다. QD 층이 식각된 시료의 상온 PR측정 결과로부터 $1.1{\sim}1.4\;eV$ 영역의 완만한 신호는 InAs QDs과 WL에 관련된 신호임을 알았다. 온도 $450{\sim}750^{\circ}C$범위에서 열처리 시켰을 때 WL층의 PR 신호가 red shift하였는데, 이는 열처리 후 InAs WL와 AlAs층 사이에 Al과 In의 내부 확산에 의해 양자점의 크기가 균일하게 재분포 되고, WL의 임계 두께가 증가하였음을 나타낸다.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1491-1504
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• 2012

InP quantum dot (QD)-organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs are capped with myristic acid (MA), which are incompatible with typical silicone encapsulants. We have introduced a new ligand, 3-aminopropyldimethylsilane (APDMS), which enables embedding the QDs into vinyl-functionalized silicones through direct chemical bonding. The exchange of ligand from MA to APDMS does not significantly affect the UV absorbance of the InP QDs, but quenches the PL to about 10% of its original value with the relative increase in surface related emission intensities, which is explained by stronger coordination of the APDMS ligands to the surface indium atoms. InP QD-organosilicon nanocomposites were synthesized by connecting the QDs using a short cross-linker such as 1,4-divinyltetramethylsilylethane (DVMSE) by the hydrosilylation reaction. The formation and changes in the optical properties of the InP QD-organosilicon nanocomposite were monitored by ultraviolet visible (UV-vis) absorbance and steady state photoluminescence (PL) spectroscopies. As the hydrosilylation reaction proceeds, the QD-organosilicon nanocomposite is formed and grows in size, causing an increase in the UV-vis absorbance due to the scattering effect. At the same time, the PL spectrum is red-shifted and, very interestingly, the PL is quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nanocomposites, namely the scattering effect, F$\ddot{o}$rster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• 한국분말재료학회지
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• 제23권5호
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• pp.348-352
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• 2016

Quantum dots (QDs) are capable of controlling the typical emission and absorption wavelengths because of the bandgap widening effect of nanometer-sized particles. These phosphor particles have been used in optical devices, photovoltaic devices, advanced display devices, and several biomedical complexes. In this study, we synthesize ZnSe QDs with controlled surface defects by a heating-up method. The optical properties of the synthesized particles are analyzed using UV-visible and photoluminescence (PL) measurements. Calculations indicate nearly monodisperse particles with a size of about 5.1 nm at $260^{\circ}C$ (full width at half maximum = 27.7 nm). Furthermore, the study results confirm that successful doping is achieved by adding $Eu^{3+}$ preparing the growth phase of the ZnSe:Eu QDs when heating-up method. Further, we investigate the correlation between the surface defects and the luminescent properties of the QDs.