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http://dx.doi.org/10.5757/JKVS.2009.18.3.208

Self-Assembled InAs/AlAs Quantum Dots Characterization Using Photoreflectance Spectroscopy  

Kim, Ki-Hong (Department of visual optics, Kyungwoon University)
Sim, Jun-Hyoung (Department of physics, Yeungnam University)
Bae, In-Ho (Department of physics, Yeungnam University)
Publication Information
Journal of the Korean Vacuum Society / v.18, no.3, 2009 , pp. 208-212 More about this Journal
Abstract
The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.
Keywords
InAs/AlAs quantum dots; Photoreflectance; Wetting laser; Annealing effect;
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