• Bulletin of the Korean Chemical Society
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• 제23권9호
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• pp.1309-1338
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• 2002

The fluorescence and photoisomerization quantum yields of trans-1-(9-anthryl)-2-(4-pyridyl)ethene (t-4-APyE), 1-(10-methyl-9-anthryl)-2-(4-pyridyl)ethene (t-4-MeAPyE), and 1-(10-chloro-9-anthryl)-2-(4- pyridyl)ethene (t-4-ClAPyE) were measured in cyclohexane, acetonitrile, and methanol at room temperature.Polar solvents result in the drastic reduction of fluorescence quantum yield and increase of photoisomerization quantum yield for all three compounds. These results are probably due to the stabilization of intramolecular charge transfer (ICT) excited state in polar solvent. The higher contribution of ICT in the presence of more electron-donating methyl substituent, manifested by largest positive fluorescence solvatochromism, indicates that the pyridine ring acts as an electron acceptor. Protonation or methylation makes pyridine ring stronger electron acceptor and causes long-wavelength ground state charge transfer absorption band and complete quenching of fluorescence. The fluorescence from t-4-APyE derivatives can be switched off responding external stimuli viz. medium polarity, protonation, or methylation.

• 한국진공학회지
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• 제8권4A호
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• pp.450-455
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• 1999

We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.170-172
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• 2002

The epilayer of vertically stacked, self-assembled InAs Quantum Dots (QDs)was grown by MBE with solid sources in non-cracking K-cells, and the sample was fabricated to a FET structure using a conventional technology. The device characteristic and performance were studied. At 77K and room temperature, the threshold voltage shift values are 0.75V and 0.35 V, which are caused by the trapping and detrapping of electrons in the quantum dots. Discharging and charging curves form the part of a hysteresis loop to exhibit memory function. The electrical injection of confined electrons in QDs products the threshold voltage shift and memory function with the persistent electron trapping, which shows the potential use for a room temperature application.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.124-125
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• 2000

We introduce a scheme with a maximized efficiency of detecting atoms passing through an optical standing-wave mode cavity. Consider a standing-wave optical cavity illuminated by a weak probe beam through one of its mirrors where the transmission through the other mirror is monitored by a photodetector. If an atom is put in the cavity, the atom-cavity coupling shifts the resonance frequency of the system via the so-called normal mode splitting, and thereby the transmission power will drop. In fact, this type of atom detection scheme has been used in recent single atom trap experiments In practice, however, the field in a standing-wave mode will have a geometrical structure having nodes and antinodes that when the atom traverses the cavity through one of the nodes, there will be no such effect of atom-field interaction. (omitted)

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.37-37
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.149-149
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• 2010

The origin of the inhomogeneous distribution of photoluminescence (PL) peak wavelength on a commercial 2" GaN wafer for green light emitting diode has been investigated by wide momentum transfer (Q) range x-ray diffraction (XRD) profile of InGaN/GaN multiple quantum wells. Near the GaN (0004) Bragg peak, wide-Q range XRD (${\Delta}Q$ > $1.4{\AA}-1$) was measured along the growth direction. Wide-Q XRD gives precise and direct information of ultra-thin InGaN quantum well structure. Based on the QW structural information, the variation of PL spectra can be explained by the combined effect of temperature gradient and slightly uneven flow of atomic sources during the QW growth. In narrow variations of indium composition and thickness of QW, an effective indium composition can be a good character to match structural data to PL spectra.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.489-489
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• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• 한국초전도ㆍ저온공학회논문지
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• 제4권2호
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• pp.11-15
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• 2002

High speed probe for measurement of sin91e flux quantum circuits is comprised of coaxial cables and microstrip lines in order to carry high speed signals without loss. For the impedance matching between coaxial cable and microstrip line, we have determined the dimension of the microstrip line with 50${\Omega}$ impedance by simulation and then have investigated the effect of line width and cross-sectional shape of signal line, dielectric material, thickness of soldering lead at the coaxial-to-microstrip transition Point, and the an91c between dielectric material and end part of the signal line on the characteristics of signal transmission of the microstrip line. From the simulation, we have found that these all parameter's had influenced on the characteristic of signal transmission on the microstrip line and should be reflected in fabricating high speed probe, We have also determined the dimension of coplanar waveguide to fabricate testing sample for performance test of high speed probe.

• 한국광학회지
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• 제2권1호
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• pp.36-49
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• 1991

The coherence properties of electromagnetic fields are reviewed, based on both the classical and quantum theories. The elementary concepts, employed frequently in the discussion of interference phenomena, are summarized. The well-known interference phenomena are described in terms of second-order coherences. The coherence theory in space-frequency domain is introduced and the coherent mode representation is presented. The generation and propagation of coherence of light are analysed and it is shown that the coherence of light is developed as light propagates. The quantum theory goes parallel with the classical theory, via the optical equivalence theorem. There are, however, certain nonclassical characteristics of light, which may not be easily understood in classical therms. These nonclassical phenomena are believed to originate from the particle aspects of light. The quantum effect on the interfernce phenomena is analysed and finally the outlook of the future research is briefly mentioned.