• Title/Summary/Keyword: Pulsed Laser deposition

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p-n heterojunction composed of n-ZnO/p-Zn-doped InP (n-ZnO/p-Zn doped InP의 p-n 이종접합 형성에 관한 연구)

  • Shim, Eun-Sub;Kang, Hong-Seong;Kang, Jeong-Seok;Bang, Seong-Sik;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.126-129
    • /
    • 2001

  • A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

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p-n Heterojunction Composed of n-ZnO/p-Zn-doped InP

  • Shim, Eun-Sub;Kang, Hong-Seong;Kang, Jeong-Seok;Pang, Seong-Sik;Lee, Sang-Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.1
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    • pp.1-3
    • /
    • 2002

  • A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

  • https://doi.org/10.4313/TEEM.2002.3.1.001 인용 PDF KSCI

p-n heterojunction composed of n-ZnO/p-Zn-doped InP (n-ZnO/p-Zn doped InP의 p-n 이종접합 형성에 관한 연구)

  • 심은섭;강홍성;강정석;방성식;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11a
    • /
    • pp.126-129
    • /
    • 2001

  • A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

  • PDF