• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.109-111
• /
• 2007

Pulsed DC 마그네트론 스퍼터링 장치를 이용하여 Polymer 및 Glass 기판 위에 $SiN_{\chi}$ (Silicon Nitride) 박막을 합성 시키고 이들의 구조적, 광학적 특성을 조사하였다. 막두께는 100 nm로 고정하였으며, power mode 및 질소 가스 유량비를 변수로 합성하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2008.11a
• /
• pp.45-46
• /
• 2008

Hard coatings of TiN which exhibit a large variation in their electrical resistivities, have been prepared in magnetron sputtering system using bipolar pulsed DC generator. TiN coatings have also been prepared using a DC generator in the same sputtering system under identical deposition conditions. Microstructural, Mechanical, Crystallographic properties of TiN films using continuous and bipolar pulsed DC generators were examined. Field emission scanning microscope and Nanoindenter have been used to characterize the coatings.

• Korean Journal of Materials Research
• /
• v.20 no.1
• /
• pp.47-50
• /
• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• Korean Journal of Materials Research
• /
• v.27 no.2
• /
• pp.69-75
• /
• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.92-92
• /
• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.93-93
• /
• 2011

The Indium Zinc Tin Oxide (IZTO) and Indium Tin Oxide (ITO) thin films are grown on PI substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90wt.%, SnO2 10wt.%). The structural, electrical, and optical properties are investigated. The IZTO thin films deposited at low temperature showed relatively low electrical resistivity compared to ITO thin films deposited at low temperature. As a result, we could prepare the IZTO thin films with the resistivity as low as $5.6{\times}10^{-4}({\Omega}{\cdot}m)$. Both of the films deposited on PI substrate showed an average transmittance over 80% in visible range (400.800nm). Overall, IZTO thin film is a promising candidate as an alternative TCO material to ITO in flexible and OLED devices.

• Journal of the Korean Society for Heat Treatment
• /
• v.22 no.5
• /
• pp.290-297
• /
• 2009

In case of using Asymmetric Bipolar Pulsed DC (ABPD) power generator, thin film is efficiently deposited as ions are getting higher energy by suppressing target poisoning and electric arc. In this article, the mechanical properties of CNx thin films deposited on the STS 316L were compared with DC and ABPD power generators. The CNx thin films deposited with ABPD clearly improved wear resistance by higher ratio of sp3CN as compared with DC. Nb interlayer affected to increase the value of 10N of adhesion between CNx thin films and substrate. But, CNx thin films deposited with ABPD couldn't endure to wear load and decreased wear resistance as the films were too thinner than substrate. Nevertheless the higher substrate bias energy applied to perform the dense films, it wasn't shown benefits about the wear properties from DC sputtering. But, in case of using ABPD sputtering, the wear resistance was largely improved without changing morphology despite of thin films.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.10
• /
• pp.9-12
• /
• 2016

The process parameters of DC pulsed sputtering to produce a multi-layer thin film with light reflectance at a specific wavelength region were studied. The optical simulation of multi-layer thin films of the silicon dioxide ($SiO_2$) films with a low refractive index and the titanium dioxide ($TiO_2$) films with a high refractive index was done. Under a DC pulsed sputtering power of 2kW and 200 sccm(standard cubic centimeter per minute) argon gas, the silicon dioxide films with a refractive index of 1.46 in the range of oxygen gas ratios of 12% and a titanium dioxide film with a refractive index of 2.27 in the range of oxygen gas ratios of 1% were produced. The multi-layer structure of high refractive index/low refractive index/high refractive index was designed and fabricated. The characteristics of the fabricated multi-layer thin film structure showed a reflectance of more than 45% in the range, 780 to 1200nm. This multi-layer structure is expected to be used to block the near infrared wavelength light.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.02a
• /
• pp.87-87
• /
• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2011.05a
• /
• pp.264-266
• /
• 2011