• 한국산학기술학회논문지
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• 제22권2호
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• pp.386-391
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• 2021

터터보 과급은 디젤엔진과 가솔린엔진 모두에서 핵심기술이다. 특히 가솔린엔진에서 엔진 다운사이징 등 다른 제어 기술과 결합하여 이산화탄소(CO2) 배출을 감소시키는 데 효과적이다. 본 연구에서는 승용차용 가솔린엔진에 장착되는 트윈 스크롤 터빈 터보과급기에서 맥동유동의 터빈 효율을 측정하였다. 맥동 생성장치가 있는 저온 테스트 벤치를 제작하여 맥동 유동이 있는 비정상상태의 압력과 온도를 측정하고 터빈 효율을 산출하였다. 테스트 벤치는 공기 압축기, 트윈 스크롤 터빈, 온도 및 압력 측정 장치 등으로 구성되었다. 실제 승용차용 엔진에서 주로 사용되는 중저속 엔진 작동 영역에 해당하는 맥동 주파수 25.0 Hz와 33.3 Hz를 공급하면서 터보과급기 회전속도를 60,000 rpm에서 100,000 rpm까지 변화시키며 측정을 수행하였다. 이때 압축비를 1.088에서 1.600 사이의 값으로 조정하였다. 이 측정 조건에서 터빈 효율은 0.517~0.544 값을 보였다. 맥동 주파수 33.3 Hz의 경우, 터빈 회전수 60,000 rpm에서 터빈 효율의 변동은 7.7%이나 터빈 회전수 100,000 rpm에서 변동은 2.6%로 터빈 회전수가 증가함에 따라 맥동의 영향은 감소하였다. 맥동 유동에서의 터빈 효율은 정상 유동 터빈 효율에 비해 터빈 회전수 60,000 rpm 인 경우 7.0%, 회전수 100,000 rpm 인 경우 3.0% 낮은 값을 보이고 있어 맥동 유동이 터빈 효율을 악화시키는 결과를 보였으며 이러한 영향은 터빈 회전수가 증가함에 따라 감소하였다.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• 한국발생생물학회지:발생과생식
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• 제17권4호
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• pp.469-475
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• 2013

In mammals, puberty is a process of acquiring reproductive competence, triggering by activation of hypothalamic kisspeptin (KiSS)-gonadotropin releasing hormone (GnRH) neuronal circuit. During peripubertal period, not only the external genitalia but the internal reproductive organs have to be matured in response to the hormonal signals from hypothalamic-pituitary-gonadal (H-P-G) axis. In the present study, we evaluated the maturation of male rat accessory sex organs during the peripubertal period using tissue weight measurement, histological analysis and RT-PCR assay. Male rats were sacrificed at 25, 30, 35, 40, 45, 50, and 70 postnatal days (PND). The rat accessory sex organs exhibited differential growth patterns compared to those of non-reproductive organs. The growth rate of the accessory sex organs were much higher than the those of non-reproductive organs. Also, the growth spurts occurred differentially even among the accessory sex organs; the order of prepubertal organ growth spurts is testis = epididymis > seminal vesicle = prostate. Histological study revealed that the presence of sperms in seminiferous tubules and epididymal ducts at day 50, indicating the puberty onset. The number of duct and the volume of duct in epididymis and prostate were inversely correlated during the experimental period. Our RT-PCR revealed that the levels of hypothalamic GnRH transcript were increased significantly on PND 40, suggesting the activation of hypothalamic GnRH pulse-generator before puberty onset. Studies on the peripubertal male accessory sex organs will provide useful references on the growth regulation mechanism which is differentially regulated during the period in androgen-sensitive organs. The detailed references will render easier development of endocrine disruption assay.

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.73-76
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• 2010

A two-facet approach was used to investigate the parametric performance of functional high-speed DDR3 (Double Data Rate) DRAM (Dynamic Random Access Memory) die placed in different types of BGA (Ball Grid Array) packages: wire-bonded BGA (FBGA, Fine Ball Grid Array), flip-chip (FCBGA) and lead-bonded $microBGA^{(R)}$. In the first section, packaged live DDR3 die were tested using automatic test equipment using high-resolution shmoo plots. It was found that the best timing and voltage margin was obtained using the lead-bonded microBGA, followed by the wire-bonded FBGA with the FCBGA exhibiting the worst performance of the three types tested. In particular the flip-chip packaged devices exhibited reduced operating voltage margin. In the second part of this work a test system was designed and constructed to mimic the electrical environment of the data bus in a PC's CPU-Memory subsystem that used a single DIMM (Dual In Line Memory Module) socket in point-to-point and point-to-two-point configurations. The emulation system was used to examine signal integrity for system-level operation at speeds in excess of 6 Gb/pin/sec in order to assess the frequency extensibility of the signal-carrying path of the microBGA considered for future high-speed DRAM packaging. The analyzed signal path was driven from either end of the data bus by a GaAs laser driver capable of operation beyond 10 GHz. Eye diagrams were measured using a high speed sampling oscilloscope with a pulse generator providing a pseudo-random bit sequence stimulus for the laser drivers. The memory controller was emulated using a circuit implemented on a BGA interposer employing the laser driver while the active DRAM was modeled using the same type of laser driver mounted to the DIMM module. A custom silicon loading die was designed and fabricated and placed into the microBGA packages that were attached to an instrumented DIMM module. It was found that 6.6 Gb/sec/pin operation appears feasible in both point to point and point to two point configurations when the input capacitance is limited to 2pF.

• 한국전자파학회논문지
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• 제13권5호
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• pp.416-425
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• 2002

이 논문에서는 기존에 운용되고 있는 5 GHz 대역의 무선통신 시스템과 무선 랜 시스템간의 전파 간섭 특성을 이해하기 위하여 실내 환경에서 간섭 실험을 수행하여 5 GHz 대역의 주파수 특성을 분석하였다. 신호 발생기에 의해 생성된 간섭 신호를 5 CHz 무선 랜 통신 시스템에 주사하여 주파수 간섭특성을 측정하였으며 전파 간섭의 주요간섭 요소로는 간섭원 주파수의 수신 레벨 이격, 간섭원 주파수 펄스의 주기 및 폭 이격 이다. 마지막으로 측정 시스템인 5 CHz 대역 무선 랜의 신뢰도를 확인하기 위하여 가변적인 데이터 전송률과 패킷 크기에 따른 전송률을 측정하였다. 이러한 측정 요소들을 측정하고자 하는 주파수 대역에서 패킷 손실률과 수신 레벨을 측정하여 간섭요인에 의한 특성을 분석하였다.

• 한국정밀공학회지
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• 제21권12호
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• pp.174-181
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• 2004

Ultra precision positioning mechanism has widely been used on semiconductor manufacturing equipments, optical spectrum analyzer and cell manipulations. Ultra precision positioning mechanism is consisted of several actuators, sensors, guides and control systems. Its efficiency depends on each performance of components. The object of this study is to design, analysis and manufacture all of the inchworm linear motor system, which is one of the equipments embodied in ultra precision positioning mechanism. Inchworm linear motor system is consisted of a controller system and an inchworm linear motor, and its driving form is similar to a motion of spanworm. A design and manufacture of inchworm linear motor, which is consisted of three PZT actuators, a rod, two columns and a guide plate, are performed. Minimizing the von-Mises stress of the hinge using Taguchi method and simulation by FEM software optimizes the structural design in a column of flexure hinge. The designed columns and guide plates are manufactured by a W-EDM and NC-milling. A controller system, which is an apparatus to drive inchworm linear motor, can easily adjust driving conditions by varying resonance frequency and input-output voltage of actuators and amplifiers. The performance of manufactured inchworm linear motor system is verified and valuated. In the future, inchworm linear motor system will be used to make a more precision positioning by reinforcing a sensor and feedback system.

• 한국정보통신학회논문지
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• 제3권2호
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• pp.273-280
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• 1999

본 논문에서는 아나로그 파형분석의 파형추적기술을 이용하여 전자기기의 고장진단을 용이하게 할 수 있는 회로분석 시스템을 설계하고 구현하였다. 회로분석기는 CMOS, MOS 회로와 같은 신기술 전자부품들을 간단하게 검사할 수 있는 개선된 능력을 가지며, 내장된 펄스 구동기를 사용하여 SCR, TRIAC 그리고 Optocoupler와 같은 게이트 구동소자들을 고장진단하게 한다. 회로분석기는 측정하고자 하는 부품 및 기판에 전원을 인가하지 않고 측정하도록 하여 측정하는 중에 발생 가능성 있는 일시적인 Short로 인한 회로의 추가적인 손상을 방지하고 반도체소자의 임피던스 상태를 분석하며 시스템 또는 PCB기판의 영구적인 고장을 일으키는 누액 또는 기판손상으로 인한 문제를 완벽하게 찾아낼 수 있었다. 이상이 의심되는 부품과 정상 부품간의 상호 비교할 수 있기 때문에 부품 식별 번호가 없거나 알아보기 힘든 부품의 고장진단에 이상적으로 응용할 수 있는 방안을 제시하도록 한다.

• 한국산학기술학회논문지
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• 제9권1호
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• pp.29-34
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• 2008

대전입자형 디스플레이 소자의 구동을 위하여 주파수, 펄스폭, 진폭, 경사 등을 구현하기 위한 4채널 파형발생기를 제작하였으며, 이 파형발생기로 노란색과 검정색으로 제작한 패널의 선택적 셀구동 신호를 확인하였다. $1^{\circ}$ 간격으로 동작하는 광방출부와 수광부, 광방출부의 분광기 연결이 구비된 집적화된 실험장치로부터 CIE 특성, 반사율, 대조비, 시야각을 측정하였으며 1 layer 입자충전일 경우 노란색은 $35{\sim}40%$, 검정색인 경우 $15{\sim}20%$의 반사율을 가지며, 노란색의 색좌표를 확인하였고 파장은 571.2nm였다. 3 layer 입자충전의 경우 광학특성은 향상됨을 확인하였다.

• 한국자동차공학회논문집
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• 제16권4호
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• pp.56-62
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• 2008

A synthetic gas reformed from hydrocarbon-based fuels consists of $H_2$, CO and $N_2$. Hydrogen contained in the synthetic gas is a very useful species in chemical processes, due to its wide flammability range and fast burning speed. The ESGI (Exhaust Synthetic Gas Injection) technology is developed to shorten the light-off time of three way catalysts through combustion of the synthetic gas in the exhaust manifold during the cold start period of SI engines. Before the ESGI technology is applied to the test engine, the authors set a test rig that consists of gas temperature and composition controllers, an exhaust pulse generator and an exhaust manifold with a visualization window, in order to optimize the point and conditions of injection of the synthetic gas. Through measuring burned gas temperatures and taking photographs of synthetic gas combustion at the outlet of the exhaust manifold, the authors tried to find the optimal injection point and conditions. Analysis of burned gas composition has been performed for various $O_2$ concentrations. As a result, when the synthetic gas is injected at the port outlet of the cylinder No. 4 and $O_2$ concentration exceeds 4%, combustion of the synthetic gas is strong and effective in the exhaust manifold.