• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.753-756
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• 2013

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.878-881
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.425-430
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• 2014

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, analytical model showed that subthreshold current was influenced by parameters of Gaussian function and gate oxide thickness of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Progress in Medical Physics
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• v.33 no.4
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• pp.63-71
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• 2022

Purpose: To clarify the relationship between the diameter of the simulated bead and the Z-resolution of the tomosynthesis image. Methods: A simulated bead was placed on a 1,024×1,024×1,024-pixel base image. The diameters were set to 0.025, 0.05, 0.1, 0.2, 0.3, 0.7, 1.0, and 1.3 mm. A bead was placed at the center of the base image and projected at a simulated X-ray angle range of ±45° to obtain a projected image. A region of interest was placed at the center of the bead image and the slice sensitivity profile (SSP) was obtained by acquiring pixel values in the z-direction. The full width at half maximum of the SSP was defined as the Z-resolution and the frequency response was obtained by the 1-D Fourier transform of the SSP. Results: Z-resolution increased with increasing bead diameter. However, there was no change in Z-resolution between 0.025 and 0.1 mm. The frequency response was similar to that of the Z-resolution, with a significant difference between 0.1 and 0.2 mm diameter. Conclusions: Z-resolution is dependent on the diameter of the bead, which should be selected considering the pixel size of the tomosynthesis image.

• Journal of Korea Multimedia Society
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• v.8 no.12
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• pp.1572-1580
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• 2005

The common requirements for watermarking are usually invisibility, robustness, and capacity. We proposed the watermarking for 3D mesh model based on projection onto convex sets for invisibility and robustness among requirements. As such, a 3D mesh model is projected alternatively onto two convex sets until it converge a point. The robustness convex set is designed to be able to embed watermark into the distance distribution of vertices. The invisibility convex set is designed for the watermark to be invisible based on the limit range of vertex movement. The watermark can be extracted using the decision values and index that the watermark was embedded with. Experimental results verify that the watermarked mesh model has both robustness against mesh simplification, cropping, affine transformations, and vertex randomization and invisibility.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.123.1-123
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• 2001

For Autonomous navigation of the mobile robots, the robots' capability to recognize 3D environment is necessary. In this paper, an on-line 3D map building method for autonomous mobile robots is proposed. To get range data on the environment, we use an sensor system which is composed of a structured light and a CCD camera based on optimal triangulation. The structured laser is projected as a horizontal strip on the scene. The sensor system can rotate $\pm$ $30{\Circ}$ with a goniometer. Scanning the system, we get the laser strip image for the environments and update planes composing the environment by some image processing steps. From the laser strip on the captured image, we find a center point of each column, and make line segments through blobbing these center poings. Then, the planes of the environments are updated. These steps are done on-line in scanning phase. With the proposed method, we can efficiently get a 3D map about the structured environment.