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http://dx.doi.org/10.6109/jkiice.2014.18.3.651

Analysis of Subthreshold Swing for Channel Doping of Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.3, 2014 , pp. 651-656 More about this Journal
Abstract
This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.
Keywords
asymmetric double gate; subthreshold swing; Gaussian distribution; channel doping; Poisson equation;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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1 A.J.Garcia-Loureiro, N.Seoane, M.Aldegunde and R.Valin, "Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors," IEEE Trans. on CAD of IC and Systems, vol.30, no.6, pp841-851, 2011.   DOI   ScienceOn
2 A.Dey, A.Chakravorty, N.DasGupta and A.DasGupta, "Analytical model of subthreshold current and slope for asymmetric 4T and 3T double-gate MOSFET," IEEE Trans. on Electron Devices, vol.55, no.12, pp.3442-3449, 2008.   DOI   ScienceOn
3 S.Jandhyala and S.Mahapatra, "Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetriy", Electronics Lett., vol.48, no.13, pp.794-795, 2012.   DOI   ScienceOn
4 C.H.Suh, "Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET," J. of Semiconductor Technology and Science, vol.11, no.2, pp.111-120, 2011.   DOI
5 H.Lu and Y.Taur, "An analytical potential model for symmetric and asymmetric DGMOSFETs," IEEE Trans. on Electron Devices, vol.53, no.5, pp.1161-1168, 2006.   DOI   ScienceOn
6 Z.Ding, G.Hu, J.Gu, R.Liu, L.Wang and T.Tang, "An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs," Microelectronics J., vol.42, pp.515-519, 2011.   DOI   ScienceOn
7 H.K.Jung, "Analysis for Potential Distribution of Asymmetric Double Gate MOSFET Using Series Function," J. Korea Inst. Inf. and Commun. Eng., vol.17, no.11, pp.2621-2626, 2013.   DOI   ScienceOn
8 P.K. Tiwari, S. Kumar, S. Mittal, V. Srivastava, U. Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs with Vertical Gaussian Doping Profile," IMPACT-2009, pp.52-55, 2009.