• Journal of Soil and Groundwater Environment
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• v.18 no.3
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• pp.109-118
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• 2013

Characteristics of the transport of zero-valent iron nanoparticles (nZVI) in an aquifer were investigated to evaluate an application of nZVI-based reactive zone technology. Main flow direction of groundwater was north. Preferential flow paths of the groundwater identified by natural gradient tracer test were shown northeast and northwest. The highest groundwater velocity was $4.86{\times}10^{-5}$ m/s toward northwest. When the breakthrough curves obtained from the gravity injection of nZVI were compared with the tracer curves, the transport of nZVI was retarded and retardation factors were 1.17 and 1.34 at monitoring wells located on the northeast and northwest, respectively. The ratios of the amount of nZVI delivered to the amount of tracer delivered at the two wells mentioned above were 24 and 28 times greater than that of the well on the main flow direction, respectively. Attachment efficiency based on a filtration theory was $4.08{\times}10^{-2}$ along the northwest direction that was the main migration route of nZVI. Our results, compared to attachment efficiencies obtained in other studies, demonstrate that the mobility of nZVI was higher than that of results reported in previous studies, regardless of large iron particle sizes of the current study. Based on distribution of nZVI estimated by the attachment efficiency, it was found that nZVI present within 1.05 m from injection well could remove 99% of TCE within 6 months.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• Journal of Korea Soil Environment Society
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• v.5 no.1
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• pp.3-12
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• 2000

The multi-region model, to describe preferential flow, is an equation representing solute transport in soils by dividing soil into numerous pore groups and using the hydraulic properties of the soil. As the model partial differential equation (PDE) is solved numerically with finite difference methods. a modified equivalent partial differential equation(MEPDE) of the partial differential equation of the multi-region model is derived to analyze the accuracy and consistency of the solution of the model PDE and the Von Neumann method is used to analyze the stability of the finite difference scheme. The evaluation obtained from the MEPDE indicated that the finite difference scheme was found to be consistent with the model PDE and had the second order accuracy The stability analysis is performed to analyze the model PDE with the amplification ratio and the phase lag using the Von Neumann method. The amplification ratio of the finite difference scheme gave non-dissipative results with various Peclet numbers and yielded the most high values as the Peclet number was one. The phase lag showed that the frequency component of the finite difference scheme lagged the true solution. From the result of the stability analysis for the model PDE, it is analyzed that the model domain should be discretized in the range of Pe < 1.0 and Cr < 2.0 to obtain the more accurate solution.

• Advanced Composite Materials
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• v.16 no.3
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• pp.207-221
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• 2007

The filling process of resin injection/compression molding (I/CM) can be divided into injection and compression phases. During the resin injection the mold is kept only partially closed and thus a gap is present between the reinforcements and the upper mold. The gap results in preferential flow path. After the gap is filled with the resin, the compression action initiates and forces the resin to penetrate into the fiber preform. In the present study, the resin flow in the gap is simplified by using the Stokes approximation, while Darcy's law is used to calculate the flow field in the fiber mats. Results show that most of the injected resins enter into the gap during the injection phase. The resin injection time is extremely short so the duration of the filling process is determined by the final closing action of the mold cavity. Compared with resin transfer molding (RTM), I/CM process can reduce the mold filling time or injection pressure significantly.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.334-341
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• 2001

The chemical and geometric effects of weld on flow-accelerated corrosion (FAC) of SA106 Gr.C low alloy steel pipe in 3.5wt% NaCl and simulated feedwater of nuclear power plant have been investigated by using rotating cylinder electrode. Polarization test and weight loss test were conducted and compared at rotating speed of 2000rpm (3.14m/s) with the variables of chemical and geometric parameters. The results showed that the chemical effects were relatively larger than the geometric effects, and the welded parts were the local anode and preferentially corroded, which could be explained by the differences between microstructural and compositional parameters. On the other hand, under active corrosion conditions, the heat affected zone were severely corroded and microstructural effects became the important role in the whole process.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.7-11
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• 2019

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H₂ flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10^-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.1-6
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• 2021

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of AZO thin films for the TCO (transparent conducting oxide). For this purpose, AZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 5.0sccm in order to see how the hydrogen gas affects the AZO thin films. AZO thin films deposited at 300℃ showed amorphous structure, whereas IZO thin films deposited at room temperature showed crystalline structure having an (222) preferential orientation. The electrical resistivity of the AZO films deposited at 300℃ was 4.388×10-3Ωcm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease.

• Proceedings of the Membrane Society of Korea Conference
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• 2005.11a
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• pp.96-101
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• 2005

A theory for the material transports through ion exchange membrane has been developed on the basis of nonequilibrium thermodynamics by removing the assumption of solvent flow in the previous paper and applied to a detailed study of the ionic transport properties of new charged mosaic membrane(CMM) system. The CMM having two different fixed charges in the polymer membrane indicated unique selective transport behavior then ion-exchange membrane. The separation behavior of ion transport across the CMM with a parallel array of positive and negative functional charges were investigated. It was well-known the analysis of the volume flux and solute flux based on nonequilibrium thermodynamics. Our suggests preferential salt transport across the charged mosaic membranes. Transport properties of heavy metal ions, $Mg^{2+}$, $Mn^{2+}$and sucrose system across the charged mosaic membrane were estimated. As a result, we were known metal salts transport depended largely on the CMM. The reflection coefficient indicated the negative value that suggested preferential material transport and was independent of charged mosaic membrane thickness.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.46-50
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• 2016

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 1.0sccm. IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.