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Structural and Electrical Characteristics of IGZO Thin Films Deposited at Different Substrate Temperature and Hydrogen Flow Rate  

Park, Su Jin (Dept. of Materials Engineering, Korea University of Technology and Education)
Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.4, 2016 , pp. 46-50 More about this Journal
Abstract
In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 1.0sccm. IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.
Keywords
IGZO thin film; RF-magnetron sputtering; substrate temperature; hydrogen flow rate;
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Times Cited By KSCI : 1  (Citation Analysis)
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