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Structural and Electrical Characteristics of MZO Thin Films Deposited at Different Substrate Temperature and Hydrogen Flow Rate  

Lee, Jisu (Dept. of Materials Engineering, Korea University of Technology and Education)
Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.2, 2018 , pp. 6-11 More about this Journal
Abstract
In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.
Keywords
MZO Thin Film; RF-magnetron Sputtering; Substrate Temperature; Hydrogen Flow Rate;
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