1 |
Y. Hoshi, H. Kato, and K. Funatsu, "ITO films deposited by facing target sputtering", Thin Solid Films, 445, pp. 245, (2003).
DOI
|
2 |
K. Ishibashi, K. Hirata, and N. Hosokawa, "Mass spectrometric ion analysis in the sputtering of oxide targets", Journal of Vacuum Science & Technology A., 10, pp. 1718, (1992).
DOI
|
3 |
N. Taga, M. Maekawa, Y. Shigesato, I. Yasui, M. Kamei and T. E. Haynes, "Deposition of Heteroepitaxial Thin Films by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., 37, pp. 6524, (1998)
DOI
|
4 |
D. H. Zhang and H. L. Ma, "Scattering mechanisms of charge carriers in transparent conducting oxide films", Appl. Phys. A., 62, pp. 487, (1996).
DOI
|
5 |
M. N. Jung, J. E. Koo, S. J. Oh, B. W. Lee, W. J. Lee, S. H. Ha, Y. R. Cho, and J. H. Chang, "Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods", Appl. Phys. Lett., 94, 041906, (2009)
DOI
|
6 |
M. Wu, Shihui. Yu, G.H. Chen, Lin He, Lei Yang, Weifeng Zhang, "Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering", Applied Surface Science, 324, pp. 791-796, (2015).
DOI
|
7 |
H. Chen, HJ. Jin, CB. Park, "Influence of Hydrogen on Al-doped ZnO Thin films in the process of Deposition and Annealing", Transactions on electrical and electronic materials, 10-3, pp. 93-96, (2009).
DOI
|
8 |
Chris G, Van de Walle, "Hydrogen as a Cause of Doping in Zinc Oxide", Phys. Rev. Lett., 85, pp. 1012, (2000).
DOI
|
9 |
H. P. Klug, L. Alexander, "X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials (2nd ed)", John Wiley and Sons, New York, (1974).
|
10 |
J. W. Zhang, G. He, T. S. Li, M. Liu, X. S. Chen, Y. M. Liu, Z. Q. Sun, "Modulation of microstructure and optical properties of Mo-doped ZnO thin films by substrate temperature", Materials Research Bulletin, 65, pp. 7-13, (2015).
DOI
|
11 |
K. Tominaga, T. Ueda, T. Ao, M. Kataoka, and I. Mori, "ITO films prepared by facing target sputtering system", Thin Solid Films, 281-282, pp. 194, (1996).
DOI
|
12 |
E. Ziegler, A. Heinrich, H. Oppermann, G. Stover, "Electrical properties and non-stoichiometry in ZnO single crystals", Phys. Status Solidi A, 66, pp. 635, (1981).
DOI
|
13 |
Anil Singh, Sujeet Chaudhary, and D. K. Pandya, "Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature", Appl. Phys. Lett., 102, 172106, (2013).
DOI
|
14 |
R. Cebulla, R. Wendt, and K. Ellmer, "Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties", J. Appl. Phys., 83, pp. 1087-1095, (1998).
DOI
|
15 |
Hwa-Min Kim, Jong-Jae Kim, "Heat treatment effects on the electrical properties of films prepared by rf-magnetron sputtering method", Journal of the Korean Vacuum Society, 14-4, pp. 238-244, (2005).
|
16 |
A. Bogaerts, "Hydrogen addition to an argon glow discharge: a numerical simulation", Journal of Analytical Atomic Spectrometry, 17, pp. 768-779, (2002).
DOI
|
17 |
E. V. Lavrov, J. Weber, F. Borrnert, Chris G. Van de Walle, and R. Helbig, "Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy", Phys. Rev. B, 66, 165205, (2002).
DOI
|
18 |
J. B. Webb, D. F. Williams, and M. Buchanan, "Transparent and highly conductive films of ZnO prepared by rf reactive magnetron sputtering", Appl. Phvs. Lett., 39, pp. 640, (1981).
DOI
|
19 |
E. Burstein, "Anomalous optical absorption limit in InSb", Phys. Rev., 93, pp. 632-633, (1954).
DOI
|