• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.455-461
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• 2018

Boron nitride (BN) nanofibers were fabricated using BN nanoparticles (70 nm) by electrospinning. Morphologies such as the diameter and density of the BN nanofibers are strongly influenced by the viscosity and dispersion state of the precursor solution. In this study, the precursor solution was prepared by ball milling BN nanoparticles and polyvinylpyrrolidone (PVP, Mw~1,300,000) in ethanol, which was electrospun and then calcined to produce BN fibers. High-quality BN nanofibers were well fabricated at a BN concentration of 15 wt% with their diameters in the range of 500 nm to 800 nm; the viscosity of the precursor solution was $400mPa{\cdot}S$. The calcination of the as-electrospun BN fibers seemed to be completed by holding them at $350^{\circ}C$ for 2 h considering the TGA data. The morphologies and phases of the BN fibers were investigated by scanning electron microscopy (SEM) and X-ray diffractometry (XRD), respectively; Fourier transform infrared (FT-IR) was also used for structure analysis.

• 한국재료학회지
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• 제5권6호
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• pp.657-666
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• 1995

Cu(hfac)$_2$,(Cu(II) hexafluoroacetylacetonate)를 프리커서로 하는 구리 화학증착에 대해 자유에너지 최소화법으로 열역학적 평형조성 계산을 수행하였다. Cu(hfac)$_2$-Ar계의 경우Cu(hfac)$_2$ 프리커서 자체의 열분해로부터 모든 공정조건에서 증착박막내로의 탄소 출입이 관찰되었다. Cu(hfac)$_2$-H$_2$,계에서는 Cu(hfac)$_2$-Ar계보다 낮은 온도에서 구리박막이 증착되며, H$_2$입력비 및 반응온도의 증가에 따라 응축상의 석출형태는 C(s)+CuF(s)로부터 C(s)+CuF(s)+Cu(s), C(s)+Cu(s), Cu(s), C(s)의 순으로 변화되는 것으로 나타났다.

• Transactions on Electrical and Electronic Materials
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• 제18권3호
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.

• 한국재료학회지
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• 제21권10호
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• pp.568-572
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• 2011

The preparation of $Y_2O_3$-doped $ZrO_2$ nanoparticles in Igepal CO-520/cyclohexane reverse micelle solutions is studied here. In this work, we synthesized nanosized $Y_2O_3$-doped $ZrO_2$ powders in a reverse micelle process using aqueous ammonia as the precipitant. In this way, a hydroxide precursor was obtained from nitrate solutions dispersed in the nanosized aqueous domains of a microemulsion consisting of cyclohexane as the oil phase, with poly (oxyethylene) nonylphenylether (Igepal CO-520) as the non-ionic surfactant. The synthesized and calcined powders were characterized by thermogravimetrydifferential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD) and transmission electron microscopy (TEM). The crystallite size was found to nearly identical with an increase in the water-to-surfactant (R) molar ratio. A FTIR analysis was carried to monitor the elimination of residual oil and surfactant phases from the microemulsion-derived precursor and the calcined powder. The average particle size and distribution of the synthesized $Y_2O_3$-doped $ZrO_2$ were below 5 nm and narrow, respectively. The TG-DTA analysis showed that the phase of the $Y_2O_3$-doped $ZrO_2$ nanoparticles changes from the monoclinic phase to the tetragonal phase at temperatures close to $530^{\circ}C$. The phase of the synthesized $Y_2O_3$-doped $ZrO_2$ when heated to $600^{\circ}C$ was tetragonal $ZrO_2$.

• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1572-1576
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• 2006

A dimeric precursor, $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ for the CVD of copper metal films, (dmaeH = N,N-dimethylaminoethanol) was synthesized by the reaction of copper(II) acetate monohydrate ($Cu(OCOCH_3)_2{\cdot}H_2O$) and dmaeH in toluene. The product was characterized by m.p. determination, elemental analysis and X-ray crystallography. Molecular structure of $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ shows that a dimeric unit $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ is linked to another through hydrogen bond and it undergoes facile decomposition at 300 C to deposit granular copper metal film under nitrogen atmosphere. The decomposition temperature, thermal behaviour, kinetic parameters, evolved gas pattern of the complex, morphology, and the composition of the film were also investigated.

• 한국결정성장학회지
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• 제8권2호
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• pp.233-239
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• 1998

화학기상증착법을 이용하여 tetramethylsilane(TMS)과 hexamethyldisilane(HMDS)으로부터 SiC층을 증착시켰다. 반응관 내의 압력은 1torr를 유지시켰으며, $H_2$ 가스를 사용하여 precursor를 반응로내로 수송하였고 $1200^{\circ}C$의 반응온도로 SiC 증착이 이루어졌다. 기판은 tantalum으로 masking한 Si-wafer와 platinum, molybdenum으로 masking한 MgO 단결정을 사용하였다. 금속층(Ta, Pt, Mo)에서의 SiC 증착 양상과 Si, MgO 위에서의 SiC 증착 양상을 비교함으로써 SiC 증착의 선택성을 관찰하였다. 증착층의 주된 상은 X-선 회절분석에 의해 $\beta-SiC$로 확인되었다. 또한 전자현미경 분석을 통해 각 층에서의 증착 양상의 차이를 조사하였다.

• 한국환경성돌연변이발암원학회지
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• 제26권2호
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• pp.35-40
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• 2006

Background: Inorganic arsenic is a human carcinogen that can target the liver, but its carcinogenic mechanisms are still unknown. Inorganic arsenic induces a spectrum of tumors including hepatocellular carcinoma in mice. Methods: Pregnant C3H mice were supplied with drinking water containing 50 ppm sodium arsenite during their pregnancy. The protein expression profile in the liver of 0.5-day-old. male offsprings exposed transplacentally to sodium arsenite was analyzed using protein 2D gel electrophoresis followed by mass spectrometry (MALDI-TOF). Results: Expression of proteins such as hydroxymethylglutaryl-CoA synthase mitochondrial precursor (HMG-CoA synthase), ${\beta}$-actin (cytoplasmic 1) and apolipoprotein A-IV precursor (Apo-AIV) were induced in mouse liver by sodium arsenite, while uricase (urate oxidase), guanine nucleotidebinding protein beta subunit 2-like 1 (RACK1) and fructose-bisphosphate aldolase B (Aldolase 2) were down-regulated. Summary: Expression of proteins that have been implicated in carcinogenesis, such as HMG-CoA, ${\beta}$-actin, and RACK1, was regulated in the liver of mice transplacentally exposed to inorganic arsenic.

• KSBB Journal
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• 제11권1호
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• pp.1-7
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• 1996

은행 (Ginkgo biloba L.) 세포의 최적 배양 조건과 유 용 성분의 생산 가능성을 규명하기 위해 은행의 각 부위로부터 캘러스를 유도, 배양하였으며 유용 성분을 검출, 분석하였다. 기내에서 무균적으로 발아시킨 은행의 유식물체로부터 잎과 줄기, 그리고 은행 성숙 종자로부터 배 (embryo)를 적출하여 2mg/ P N NAA와 5mg/ P kinetin이 첨가된 WP 고형배지에 서 캘러스를 유도시켰다. 세포 기원 별로 선발된 3 종류의 캘러스를 각각 1mg/P NAA와 O.lmg/ P kinetin이 첨가된 MS 액체배지( 3 % sucrose, pH 5 5.8)에서 16시간 광주기로 계대배양하였을 때 엽록 소를 다량 함유한 green callus를 형성 하였고, 배 유래의 캘러스가 가장 빠른 성장을 나타냈다. TLC 및 EMS를 이용하여 flavonoid 및 그 전구물질 퉁 의 유용물질을 확인한 바, 앞에서 검출되지 않은 flavonoid의 전구물질 퉁이 캘러스에서 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.236-236
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• 2011

Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.