1 |
S. R. Kodigala, I. Bhat, T. P. Chow, J. K. Kim, and E. F. Schubert, 'Surface studies of SiC epitaxial layers grown by chemical vapor depositions', Materials Sci & Eng. B, Vol. 129, p. 22, 2006
DOI
ScienceOn
|
2 |
G. Brauer, A. Anwand, F. Eichhorn, W. Skorupa, C. Hofer, C. Teichert, J. Kuriplach, J. Cizek, I. Prochazka, P. G. Coleman, T. Nozawa, and A. Kohyama, 'Characterization of a SiC/SiC composite by x-ray diffraction, atomic force microscopy and positron spectroscopies', Appl. Surf. Sci., Vol. 252, No.8, p. 3342, 2006
DOI
ScienceOn
|
3 |
U. Mandracci, M. Meotto, and G. Bamcca, 'Polycrystalline SiC growth and characterization', Appl. Surf. Sci., Vol. 238, p. 331, 2004
DOI
ScienceOn
|
4 |
R. J. Jwanowski, K. Fronc, M. Heinone, and Paszkowics, 'XPS and XRD study of crystalline 3C-SiC grown by sublimation', J. Alloys & Compounds, Vol. 286, p. 143, 1999
DOI
ScienceOn
|
5 |
M. R. Werner and W. R. Fahrner, 'Review on materials, microsensors, system, and devices for high-temperature and harshenvironment applications', IEEE Trans. on Indus. Electro., Vol. 48, p. 249, 2001
DOI
ScienceOn
|
6 |
N. Barbour and G. Schmidt, 'Inertial sensor technology trends', IEEE Sensors J., Vol. 4, p. 332, 2001
|
7 |
L. A. Liew, R. A. Saravanan, V. M. Bright, M. L. Dunn, J. W. Daily, and R. Rajhrner, 'Processing and characterization of silicon carbon-nitride ceramics: application of electrical properties towards MEMS thermal actuators, Sensors & Actuators A, Vol. 103, p. 171, 2003
DOI
ScienceOn
|
8 |
P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, Vol. 82, p. 210, 2000
DOI
ScienceOn
|
9 |
G. Kotzar, M. Freas, P. Abel, A. Fleischman, S. Roy, C. Zorman, J. M. Moran, and J. Melzak, 'Evaluation of MEMS materials of constmction for implantable medical devices', Biomaterials, Vol. 23, p. 2727, 2002
|
10 |
D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Mabudian, 'Recent progress toward manufacturable polycrystalline SiC surface micromachining technology', IEEE Sensors J, Vol. 4, p. 441, 2004
DOI
ScienceOn
|
11 |
M. B. J. Wijesundara, G. Valente, W. R. Ashurst, R. T. Howe, A. P. Pisano, C. Carraro, and R. Maboudian, 'Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor I. growth stmcture, and chemical characterization', J. Electrochem. Soc., Vol. 151, p. C210, 2004
DOI
ScienceOn
|
12 |
D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Mabudian, 'Characterization of residual strain of residual strain in SiC films deposotion using 1, 3-disliliabutane for MEMS application', J. Microlith., Microfab., Microsys., Vol. 2, p. 259, 2003
DOI
ScienceOn
|
13 |
Y. T. Yang, K. L. Ekinci, X. M. H. Huang, L. M. Schiavone, and M. L. Roukes, 'Monocrystalline silicon carbide nanoelectromechanical systems', Appl. Phys. Lett., Vol. 78, p. 162, 2001
DOI
ScienceOn
|
14 |
C. R. Stoldt, C. Carraro, W. R. Ashurst, D. Gao, R. T. Howe, and R. Maboudian, 'A low-temperature CVD process for silicon carbide MEMS', Sensors & Actuators A, Vol. 97, p. 410, 2002
DOI
ScienceOn
|