• Journal of Power Electronics
• /
• 제17권3호
• /
• pp.725-732
• /
• 2017

This paper proposed a real-time, low-cost, fast transistor open-circuit fault diagnosis method for voltage-source inverter fed induction motors. A transistor open-circuit changes the symmetry of the inverter topology, leading to different similarities among three phase load currents. In this paper, dynamic time warping is proposed to describe the similarities among load currents. The proposed diagnosis is independent of the system model and needs no extra sensors or electrical circuits. Both simulation and experimental results show the high efficiency of the proposed fault diagnosis method.

• Journal of Power Electronics
• /
• 제18권6호
• /
• pp.1901-1911
• /
• 2018

This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

• 한국전자파학회논문지
• /
• 제23권1호
• /
• pp.68-75
• /
• 2012

W-CDMA 단말기에 적용 가능한 balanced 전력증폭기의 load insensitivity 특성을 분석하였다. Balanced 전력증폭기 내부에 있는 두 평형(parallel) 증폭기의 부하 임피던스가 출력 부하 임피던스의 부정합(load impedance mismatch)에 따라 어떻게 변화하는지를 수식적으로 계산하였고, 이를 통해 선형성이 가장 취약한 반사 계수 위상을 조사하였다. 이 위상에서 balanced 전력증폭기는 출력단의 트랜지스터 면적을 적절히 증가시킬 경우 선형성이 개선될 수 있음을 제안하였고, 트랜지스터 면적이 서로 다른 복수개의 1단 balanced 전력증폭기를 설계하여 VSWR=4:1 반사 조건에서의 시뮬레이션을 통해 이를 검증하였다.

• 한국전기전자재료학회논문지
• /
• 제23권9호
• /
• pp.671-675
• /
• 2010

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

• 반도체디스플레이기술학회지
• /
• 제9권1호
• /
• pp.29-33
• /
• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• Journal of Power Electronics
• /
• 제16권5호
• /
• pp.1843-1850
• /
• 2016

This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30℃ lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.

• 한국전자파학회논문지
• /
• 제26권6호
• /
• pp.540-545
• /
• 2015

본 논문은 GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) die를 이용하여 S-대역 내부 정합형 전력 증폭기 설계, 제작 그리고 실험 결과에 대해 기술하였다. S-대역 내부 정합형 전력 증폭기를 설계하기 위하여 고유전율을 가지는 기판과 알루미나 기판을 이용하여 입/출력단 정합 회로를 설계 및 제작하였다. 측정 결과로는 펄스 모드로 동작시켰을 때 3 GHz에서 55.4 dBm의 출력 전력, 78 % 드레인 효율 그리고 11 dB의 전력 이득을 얻었다.

• 한국철도학회논문집
• /
• 제14권5호
• /
• pp.411-415
• /
• 2011

DC/DC컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시키는 전력변환기이다. 전압모드 DC/DC 컨버터는 주기적으로 입력측에서 출력측으로 전달되는 에너지를 제어하는 기능을 수행하기 위해 MOSFET(산화물-반도체 전계 효과 트랜지스터), 인덕터, PWM 제어기(오실레이터, 연산증폭기, 비교기로 구성)를 이용한다. 본 논문에서 PWM(펄스폭 변조) 모듈과 스위칭모드로 제어하는 기본적인 승압과 강압컨버터를 연구하고, 전기적 특성을 SPICE로 시뮬레이션을 수행하며, 전력의 효율을 각 소자의 변화와 사양에 따라 분석하는데 있다.

• 전력전자학회지
• /
• 제22권1호
• /
• pp.42-50
• /
• 2017

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 춘계학술대회 논문집 에너지변화시스템부문
• /
• pp.131-135
• /
• 2009

This paper reviews the characteristics of Power MOSFET device technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits.