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The Transparent Semiconductor Characteristics of ZnO Thin Films Fabricated by the RF Magnetron Sputtering Method  

Kim, Jong-Wook (Electronic Engineering of Cheongju University)
Hwang, Chang-Su (Department of Physics, Korea Air Force Academy)
Kim, Hong-Bae (school of Electronic and Information Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.9, no.1, 2010 , pp. 29-33 More about this Journal
Abstract
Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.
Keywords
ZnO; Transparent Thin Film Transistor(TTFT); RF magnetron sputtering; RF power; Oxide semiconductor;
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Times Cited By KSCI : 2  (Citation Analysis)
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